• Title, Summary, Keyword: Laser CVD

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Latchup characteristics of BL/BILLI retrograde twin well CMOS with MeV ion implanted Bored Layer (MeV 이온주입에 의한 매입층을 갖는 BILLI retrograde well과 latchup 특성)

  • Kim, Jong-Kwan;Kim, In-Soo;Kim, Young-Ho;Shin, Sang-Woo;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
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    • pp.1270-1273
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    • 1997
  • We have investigated the latchup characteristics of BL/BILLI retrograde twin well CMOS that has the high energy ion implanted buried layer to intend for more improvement of latchup compare to conventional retrograde well and BILLI structures. We explored the dependence of various latchup characteristics such as n+ trigger latchup and p+ trigger latchup on the buried layer implant doses. We show various DC latchup characteristics that allow us to evaluate each technology and suggest guidelines for the reduction of latchup susceptibility.

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A Study on Reducing High Energy Ion Implant Induced Defect (고에너지 이온주입 공정에 의한 유기 결함과 그 감소 대책)

  • Kim, Young-Ho;Kim, In-Soo;Kim, Chang-Duk;Kim, Jong-Kwan;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
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    • pp.1292-1297
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    • 1997
  • 본 연구에서는 latch-up 개선책의 일환으로 개발중인 매립층을 갖는 retrograde well의 형성기술과 더불어 공정 단순화를 목적으로 개발된 BILLI (Buried Implanted Layer for Lateral Isolation) well 구조[1]에 대한 공정 유기 결함을 분석하고 그에 의한 소자 열화 특성을 분석 하였으며 그 개선책을 제시 하고자 하였다. 매립층 형성에 의한 유기결함은 접합 누설전류와 Gate oxide 신뢰성을 열화 시켰으나 이온주입 후 $1000^{\circ}C$ 이상의 온도에서 10sec 정도의 RTP anneal에 의해 그 소자 특성이 개선되며 표면 결함이 감소함을 알 수 있었다.

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Repairing of a Defective Metallic Line using Laser CVD Deposited Tungsten Film in TFT LCD (레이저 CVD 텅스텐막 증착을 통한 TFT LCD 불량배선 수리)

  • Kim, Sukoon-Koon;Son, Jeong-Seok;Lee, Gi-Sun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.10
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    • pp.1114-1119
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    • 2004
  • The photodepositioned tungsten film by laser CVD has been carried out the taping test with scotch tape over 10 times. As a result, it exhibited strong adhesion to the under-film such as ITO and SiNx patterned on the LCD substrate. However, it was seriously attacked by alkaline solution used for removing polyimide. And a thickness of laser CVD tungsten film had a close relation to a speed of laser scanning. Also we have improved the success rate of a laser CVD repair with making two pairs of contact hole structure and decreasing laser scanning speed.

A Study of Deposition Mechanism of Laser CVD SiO2 Film

  • Sung, Yung-Kwon;Song, Jeong-Myeon;Moon, Byung-Moo
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.5
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    • pp.33-37
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    • 2003
  • This study was performed to investigate the deposition mechanism of SiO$_2$ by ArF excimer laser(l93nm) CVD with Si$_2$H$\_$6/ and N$_2$O gas mixture and evaluate laser CVD quantitatively by modeling. With ArF excimer laser CVD, thin films can be deposited at low temperature(below 300$^{\circ}C$), with less damage and good uniformity owing to generation of conformal reaction species by singular wavelength of the laser beam. In this study, new model of SiO$_2$ deposition process by laser CVD was introduced and deposition rate was simulated by computer with the basis on this modeling. And simulation results were compared with experimental results measured at various conditions such as reaction gas ratio, chamber pressure, substrate temperature and laser beam intensity.

Step Coverage of Laser CVD Deposited $SiO_2$ Films (Laser CVD $SiO_2$ 막의 Step Coverage에 관한 연구)

  • Park, J.W.;Kim, S.W.;Chun, Y.I.;Park, J.S.;Kang, H.B.;Sung, Y.K.
    • Proceedings of the KIEE Conference
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    • pp.155-157
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    • 1991
  • This paper describe a Laser CVD technology which realizes planarized interlevel dielectrics in sub-micron VLSI's. This technology comprises sub-micron gap filling with $SiO_2$ films between metal lines. Laser CVD process conditions have been investigated to improve step coverage of interlevel dielectrics. An ArF(193nm) Excimer Laser was used to excite and dissociate gas phase $SiH_4\;and\;N_2O$ molecules. The Laser CVD by $N_2O\;and \;SiH_4$. mixture gases has realized conformal deposition above the temperature of $300^{\circ}C$, as a result sub-micron gaps were buried with $SiO_2$ films.

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A Study on Deposition Mechanism of Laser CVD $SiO_2$ by Process Simulation (공정 Simulation에 의한 Laser CVD $SiO_2$막 형성 기구 규명에 관한 연구)

  • Shin, Sang-Woo;Lee, Sang-Kwon;Kim, Tae-Hun;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
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    • pp.1301-1303
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    • 1997
  • This study was performed to investigate the deposition mechanism of $SiO_2$ by ArF excimer Laser(193nm) CVD with $Si_2H_6$ and $N_2O$ gas mixture and evaluate Laser CVD quantitatively by modeling. In this study, new model of $SiO_2$ deposition process by Laser CVD is introduced and deposition rates are simulated by computer with the basis on this modeling. And simulation results are compared with experimental results measured at various conditions such as reaction gas ratio, chamber pressure, substrate temperature and laser beam intensity.

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The Fabrication of Laser CVD $SiO_2$ film condenser and its characteristics (Laser CVD에 의한 $SiO_2$박막 콘덴서의 시작과 그 특성)

  • Hong, S.H.;Cho, T.H.;Yoo, H.S.;Lee, H.S.;Lee, K.S.;Sung, Y.K.
    • Proceedings of the KIEE Conference
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    • pp.231-233
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    • 1993
  • This paper proposes a new $SiO_2$ film condenser fabrication technique by photo-chemically deposited $SiO_2$ films by Laser CVD. Laser CVD is noticeable that film deposition can be done at low temperature below $300^{\circ}C$ with less damage. After film deposition, the characteristics of Laser CVD $SiO_2$ films and $SiO_2$ film condenser is evaluated.

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The Characteristics of poly-Si films Deposition by Laser CVD and Laser Etching (Laser CVD에 의한 Poly-Si 막의 퇴적 및 Laser etching 특성)

  • Kwon, K.H.;Kim, Y.H.;Shin, S.W.;Kim, C.D.;Sung, Y.K.
    • Proceedings of the KIEE Conference
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    • pp.1550-1552
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    • 1996
  • Poly-Si films were deposited by Laser CVD using 193nm ArF Excimer Laser from disilane($Si_{2}H_{6}$) and then the films were etched by Laser Etching using the same Laser with SF6 etching gas. Dependence on various film deposition conditions and etching conditions was investigated respectively.

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A Study on Amorphous Silicon Film Deposition by Laser CVD (Laser CVD에 의한 비정질 실리콘 박막 형성에 관한 연구)

  • Yoo, H.S.;Park, G.Y.;Ryou, J.H.;Cho, T.H.;Kim, J.H.;Sung, Y.K.
    • Proceedings of the KIEE Conference
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    • pp.1277-1279
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    • 1993
  • As a highly information-oriented society developes, various kinds of amorphous semiconductor devices, such as solar cells, electrographic printers, image sensors, and flat-panel televisions, have been developed as man/machine interfaces. This paper proposed the laser CVD techniques to deposit hydrogenated amorphous silicon thin film on glass or dielectric substrate at low temperatures. Varying the deposition conditions, we examined optical and electrical charateristics of a-Si:H film deposited by Laser CVD.

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