• Title, Summary, Keyword: Langmuir-blodgett

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Photoswitching Characteristics of Biodevice Consisting of Chlorophyll $\alpha$ Langmuir-Blodgett Film

  • Nam, Yun-Suk;Choi, Jeong-Woo;Lee, Won-Hong
    • Journal of Microbiology and Biotechnology
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    • v.14 no.5
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    • pp.1038-1042
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    • 2004
  • The photoelectric responses of a biodevice consisting of chlorophyll $\alpha$ Langmuir-Blodgett film were investigated. Chlorophyll $\alpha$ Langmuir-Blodgett films were deposited onto ITO and Au coated glass. To confirm film formation, surface analysis of chlorophyll $\alpha$ Langmuir-Blodgett film was carried out by measurement using atomic force microscopy. The metal/insulator/metal structured biodevice was constructed by depositing aluminum onto the chlorophyll $\alpha$ Langmuir-Blodgett film surface. To investigate the photoelectric response, the current-voltage characteristic was measured by the conducting metal tip. The photoswitching function and transient photovoltage characteristics of the proposed device were measured by irradiation with Ar ion laser and $N_2$ pulse laser, respectively. This research suggested that the proposed biodevice consisting of chlorophyll $\alpha$ could be applied to the molecular scale biosensor and/or bioelectronic device.

Construction of Langmuir trough and optical properties of phenylhydrazone dye LANGMUIR-BLODGETT films by attenuated total reflection (LANGMUIR-BLODGETT 박막 증착장치 제작 및 전반사감쇠법에 의한 Phenylhydrazone)

  • 고해석
    • Proceedings of the Optical Society of Korea Conference
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    • pp.193-198
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    • 1990
  • We constructed Langmuir trough for the ultra-thin films (from a few tens {{{{ ANGSTROM }}) of nonlinear optical organic materials. Surface pressure - area isotherm for the tetracosanoic acid which is a fatty acids, was recorded and Langmuir -Blodgett films was deposited using it. The homogenity was investigated using scanning electron microscopy (SEM).

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Electrical Properties of Molecular Diode Using Eicosanoic Acid Langmuir-Blodgett(LB) Monolayer Film (Eicosanoic Acid Langmuir-Blodgett(LB) 박막을 이용한 분자 다이오드의 전기적 특성)

  • Koo, Ja-Ryong;Lee, Ho-Sik;Kwon, Hyuck-Joo;Sohn, Byoung-Chung
    • Journal of the Korean Applied Science and Technology
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    • v.20 no.2
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    • pp.148-153
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    • 2003
  • Electron transfer through an Langmuir-Blodgett(LB) monolayer film sandwiched between metal electrodes. We used an eicosanoic acid material and the material was very famous as a thin film insulating material. Eicosanoic acid monolayer was deposited by Langmuir-Blodgett(LB) technique and a subphase was a $CdCl_2$ solution as a 2${\times}10^{-4}$ mol/L. Also we used a bottom electrode as an Al/$Al_2O_3$ and a top electrode as a Al and Ti/Al. Here, the $Al_2O_3$ on the bottom electrode was deposited by thermal evaporation method. The $Al_2O_3$ layer was acted on a tunneling barrier and insulating layer in tunnel diode. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was about 24 ${\AA}^2$/molecule. When the positive and negative bias applied to the molecular device, the behavior shows that a tunnel switching characteristics. This result were analyzed regarding various mechanisms.

Electrochemical Properties of Ultrathin Film Prepared Functional Polyimide by Langmuir-Blodgett Method (Langmuir-Blodgett법으로 제조한 기능성 폴리이미드 초박막의 전기화학적 특성)

  • Park, Keun-Ho;Min, Chang-Hun;Son, Tae-Chul
    • Journal of the Korean Applied Science and Technology
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    • v.26 no.4
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    • pp.400-406
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    • 2009
  • We investigated the electrochemical properties for Langmuir-Blodgett (LB) films of functionalized polyimide. LB films of polyimide monolayer were deposited by the Langmuir-Blodgett method on the indium tin oxide(ITO) glass. The electrochemical properties measured by cyclic voltammetry with a three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) at various concentrations(0.5, 1.0, and 1.5 N) of $NaClO_4$ solution. The current of reduction and oxidation range was measured from 1650 mV to -1350 mV, continuously. The scan rates were 50, 100 and 150 mV/s, respectively. As a result, monolayer and multilayer LB films of polyimide are appeared on irreversible process caused by the oxidation current from the cyclic voltammogram.

Phenomena of voltage generation in langmuir-blodgett ultra-thin films (Langmuir-Blodgett 초박막의 전압발생현상)

  • ;;;;Taro Hino
    • Electrical & Electronic Materials
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    • v.6 no.3
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    • pp.228-231
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    • 1993
  • Langmuir-Blodgett(LB) 초박막 MIM구조의 소자에서 직류전압이 발생된다는 것은 이미 잘 알려져 있다. 발생전압의 원인은 LB막과 전극사이의 어떤 화학반응에 의한 것으로 보고되었다. 본 논문에서는 1986년에 제작되어 공기중에 방치된 LB 초박막 시료를 대상으로 실험한 결과, 제작 당시와 동일한 크기의 전압이 발생하고 있음을 확인할 수 있었다. 이때 LB막과 전극의 두께는 각각 20~30.angs. 및 2000.angs.정도이었다.

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Electrical Properties of (N-docosyl quinolinium)-TCNQ(1 :2) Charge Transfer Complex Langmuir-Blodgett Films ((N-docosyl quinolinium)-TCNQ(1:2) 전하 이동 착물 Langmuir-Blodgett막의 전기적 특성)

  • 정순욱;정회걸
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.143-146
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    • 1999
  • In this study, Ultra-thin films of (N-ducosyl quinolinium)-TCNQ(1:2) complex were prepared on the hydrophilic substrate by Langmuir-Blodgett(LB) technique. By measure of UV-vis spectra and capacitance, deposition status was confirmed together with the thickness of natural oxidized aluminum film inside a device and dielectric constant of (N-docosyl quinolinium)-TCNQ(1:2) complex. The electrical properties of (N-docosyl 7uin7linium)-TCNQ(1:2) complex were investigated at room temperature. The conductivity of this film measured by the direction uf either vertical or horizontal axis is results in a quite different value.

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A Study on the Molecular Orientation of (N-docosyl quinolinium)-TCNQ(1:2) Charge Transfer Complex Langmuir-Blodgett Films ((N-docosyl quinolinium)-TCNQ(1:2) 전하 이동 착물 Langmuir-Blodgett막의 분자 배향에 관한 연구)

  • Jeong, Sun-Uk;Jeong, Hoe-Geol
    • Korean Journal of Materials Research
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    • v.10 no.8
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    • pp.564-568
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    • 2000
  • Langmuir-Blodgett(LB) 법은 미래의 분자전자소자를 위한 가장 유력한 수단이며, 이러한 분자박막 소자는 그 성질이 분자는 배향에 영향을 박데 되므로 현재 새로운 물질을 이용하여 분자전자소자의 제작에 있어 관심을 모으고 있다. 본 연구에서는 (N-docosyl quinolinium)-TCNQ(1:2) 전하 이동 착물 LB 막의 분자 배향을 UV/vis 편광흡수 스펙트럼과 FT-IR transmission 및 reflection-absorption 스펙트럼의 흡수강도를 비교하여 정량적으로 평가하였다. 그 결과 TCNQ의 transition dipole moment의 각은 약 56~58。 였으며, 알킬 고리의 경사각은 약 11.1~13。였다. 제작된 Z-형 LB 막의 표면은 고압에서 중앙 높이 차가 3~4$\AA$으로 평탄하였다.

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P(VDF-TrFE) Thin Film Transistors using Langmuir-Blodgett Method (Langmuir-Blodgett 법을 이용한 P(VDF-TrFE) 박막 트랜지스터)

  • Kim, Kwang-Ho
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.2
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    • pp.72-76
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    • 2020
  • The author demonstrated organic ferroelectric thin-film transistors with ferroelectric materials of P(VDF-TrFE) and an amorphous oxide semiconducting In-Ga-Zn-O channel on the silicon substrates. The organic ferroelectric layers were deposited on an oxide semiconductor layer by Langmuir-Blodgett method and then annealed at 128℃ for 30min. The carrier mobility and current on/off ratio of the memory transistors showed 9 ㎠V-1s-1 and 6 orders of magnitude, respectively. We can conclude from the obtained results that proposed memory transistors were quite suitable to realize flexible and werable electronic applications.

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