• Title, Summary, Keyword: Junction temperature

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Measurement of Junction Temperature in High Power LED Module with Property Analysis of Single Package (단일 패키지의 특성 분석을 통한 고출력 발광 다이오드 모듈의 접합 온도 측정)

  • Lee, Se-IL;Kim, Woo-Young;Jeong, Young-Gi;Yang, Jong-Kyung;Park, Dae-Hee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.12
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    • pp.973-977
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    • 2010
  • The temperature of junction in LED affects the life time and performance. however, the measurement of junction temperature in module is very difficult. In this paper, to measure the junction temperature in LED module, optical and electrical properties is measured in single package in temperature from 25 [$^{\circ}C$] to 85 [$^{\circ}C$], and then junction temperature can is estimated in module with measuring the average voltage of single package. As results, the junction temperature of single package is measured the temperature of 61.2 [$^{\circ}C$] in ambient temperature, also, the junction temperature of LED module is measured the temperature of 72.5 [$^{\circ}C$] in ambient temperature.

Assessment Methodology of Junction Temperature of Light-Emitting Diodes (LEDs)

  • Chang, Moon-Hwan;Pecht, Michael
    • Journal of the Microelectronics and Packaging Society
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    • v.23 no.3
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    • pp.7-14
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    • 2016
  • High junction temperature directly or indirectly affects the optical performance and reliability of high power LEDs in many ways. This paper is focused on junction temperature characterization of LEDs. High power LEDs (3W) were tested in temperature steps to reach a thermal equilibrium condition between the chamber and the LEDs. The LEDs were generated by pulsed currents with duty ratios (0.091% and 0.061%) in multiple steps from 0mA and 700mA. The diode forward voltages corresponding to the short pulsed currents were monitored to correlate junction temperatures with the forward voltage responses for calibration measurement. In junction temperature measurement, forward voltage responses at different current levels were used to estimate junction temperatures. Finally junction temperatures in multiple steps of currents were estimated in effectively controlled conditions for designing the reliability of LEDs.

Analysis of Lattice Temperature in Super Junction Trench Gate Power MOSFET as Changing Degree of Trench Etching

  • Lee, Byeong-Il;Geum, Jong Min;Jung, Eun Sik;Kang, Ey Goo;Kim, Yong-Tae;Sung, Man Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.3
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    • pp.263-267
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    • 2014
  • Super junction trench gate power MOSFETs have been receiving attention in terms of the trade-off between breakdown voltage and on-resistance. The vertical structure of super junction trench gate power MOSFETs allows the on-resistance to be reduced compared with conventional Trench Gate Power MOSFETs. The heat release of devices is also decreased with the reduction of on-resistance. In this paper, Lattice Temperature of two devices, Trench Gate Power MOSFET and Super junction trench gate power MOSFET, are compared in several temperature circumstance with the same Breakdown Voltage and Cell-pitch. The devices were designed by 100V Breakdown voltage and measured from 250K Lattice Temperature. We have tried to investigate how much temperature rise in the same condition. According as temperature gap between top of devices and bottom of devices, Super junction trench gate power MOSFET has a tendency to generate lower heat release than Trench Gate Power MOSFET. This means that Super junction trench gate power MOSFET is superior for wide-temperature range operation. When trench etching process is applied for making P-pillar region, trench angle factor is also important component. Depending on trench angle, characteristics of Super junction device are changed. In this paper, we focus temperature characteristic as changing trench angle factor. Consequently, Trench angle factor don't have a great effect on temperature change.

Analysis of the Junction Temperature in the LED Chips using the Finite Element Method (유한요소법을 이용한 LED 칩의 접합부 온도 해석)

  • Han, Ji-Won;Park, Joo-Hun
    • Journal of the Korean Society of Safety
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    • v.27 no.6
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    • pp.26-30
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    • 2012
  • It is difficult to determine the junction temperature because LED lightings are manufactured using several chips with low power. This paper reports on the finite element method of the determination of junction temperature in the GaN-based LEDs. The calculated junction temperature of the LED chip using FEM was compared with the experimentally measured data. As the results of this study, the junction temperature of LED chips with via holes is lower than that of LED chips without via hole. Therefore, the research of via hole is necessary to decrease junction temperature of LED chips.

Junction Temperature Prediction of IGBT Power Module Based on BP Neural Network

  • Wu, Junke;Zhou, Luowei;Du, Xiong;Sun, Pengju
    • Journal of Electrical Engineering and Technology
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    • v.9 no.3
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    • pp.970-977
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    • 2014
  • In this paper, the artificial neural network is used to predict the junction temperature of the IGBT power module, by measuring the temperature sensitive electrical parameters (TSEP) of the module. An experiment circuit is built to measure saturation voltage drop and collector current under different temperature. In order to solve the nonlinear problem of TSEP approach as a junction temperature evaluation method, a Back Propagation (BP) neural network prediction model is established by using the Matlab. With the advantages of non-contact, high sensitivity, and without package open, the proposed method is also potentially promising for on-line junction temperature measurement. The Matlab simulation results show that BP neural network gives a more accuracy results, compared with the method of polynomial fitting.

Comparison of Junction Temperature for Top-Emitting Organic Light-Emitting Diodes Fabricated on Different Substrates

  • Juang, Fuh-Shyang;Tsai, Yu-Sheng;Wang, Shun-Hsi;Chen, Chuan-Hung;Cheng, Chien-Lung;Liao, Teh-Chao;Chen, Guan-Wen
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1148-1151
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    • 2009
  • A self-designed, written in labview, Organic Light-Emitting Diode junction temperature measuring program was used to calculate the internal junction temperature for devices during operation, and an infrared thermometer was used to measure the backside temperature of the device substrate, to discuss the effects of the junction and substrate temperature difference to the characteristics of the device.

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Improvement the Junction Temperature Measurement System Considering the Parasitic Capacitance in LED (LED 기생 커패시턴스를 고려한 접합온도 측정 시스템의 개선)

  • Park, Chong-Yun;Yoo, Jin-Wan
    • Journal of Industrial Technology
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    • v.29 no.B
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    • pp.187-191
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    • 2009
  • Recently, we have used LEDs to illumination because it has a high luminous efficiency and prolong lifespan. However the light power and lifetime is reduced by junction temperature increment of LED. So it is important to measure the junction temperature accurately. In case of using a electrical method measuring junction temperature of LED. Temperature measurement errors are spontaneously generated because of a parasitic capacitances in LED. In this paper, we proposed a method that reducing LED's parasitic capacitance effects for electrical measurement. It was demonstrated by the experimental result that is more correct than established method.

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Design and Implementation of High Power LED Junction Temperature Measurement Circuit (고출력 LED의 접합온도 측정회로 설계 및 구현)

  • Park, Chong-Yun;Yoo, Jin-Wan
    • Journal of Industrial Technology
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    • v.30 no.A
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    • pp.83-88
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    • 2010
  • Recently, the LED lighting is widely used to illumination purpose due to its high luminous efficiency and the long life time. However, the light power and lifetime is reduced by junction temperature increment of LED. So it is important to measure the junction temperature accurately. In this paper, we proposed a new design and implementation method of high power LED junction temperature measurement circuit. The proposed circuit has two current sources which are a driving current source and a measurement is verified by experiment, and the result shows that the proposed circuit is appropriate to practical use.

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Electrothermal Analysis for Super-Junction TMOSFET with Temperature Sensor

  • Lho, Young Hwan;Yang, Yil-Suk
    • ETRI Journal
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    • v.37 no.5
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    • pp.951-960
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    • 2015
  • For a conventional power metal-oxide-semiconductor field-effect transistor (MOSFET), there is a trade-off between specific on-state resistance and breakdown voltage. To overcome this trade-off, a super-junction trench MOSFET (TMOSFET) structure is suggested; within this structure, the ability to sense the temperature distribution of the TMOSFET is very important since heat is generated in the junction area, thus affecting its reliability. Generally, there are two types of temperature-sensing structures-diode and resistive. In this paper, a diode-type temperature-sensing structure for a TMOSFET is designed for a brushless direct current motor with on-resistance of $96m{\Omega}{\cdot}mm^2$. The temperature distribution for an ultra-low on-resistance power MOSFET has been analyzed for various bonding schemes. The multi-bonding and stripe bonding cases show a maximum temperature that is lower than that for the single-bonding case. It is shown that the metal resistance at the source area is non-negligible and should therefore be considered depending on the application for current driving capability.

Progressive Inelastic Deformation Characteristics of Cylindrical Structure with Plate-to-Shell Junction Under Moving Temperature Front

  • Lee, Hyeong-Yeon;Kim, Jong-Bum
    • Journal of Mechanical Science and Technology
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    • v.17 no.3
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    • pp.400-408
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    • 2003
  • A study on the progressive inelastic deformation behavior of the 316 L stainless steel cylindrical structure with plate-to-shell junction under moving temperature front was carried out by structural test and analysis. The structural test intends to simulate the thermal ratcheting behavior occurring at the reactor baffle of the liquid metal reactor as free surface of hot sodium pool moves up and down under plant transients. The thermal ratchet load that heats the specimen up to 550$^{\circ}C$ was applied repeatedly and residual deformation was measured. The thermal ratcheting test was carried out with two types of cylindrical structures, one with plate to-shell junction and the other without the junction to investigate the effects of the geometric discontinuities on the global ratcheting deformation. The temperature distributions of the test specimens were measured and were used for the ratcheting analysis. The ratchet deformations were analyzed with the constitutive equation of the non-linear combined hardening model. The analysis results were in good agreement with those of the structural tests.