• Title, Summary, Keyword: Indium tin oxide

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Recycling Method of Used Indium Tin Oxide Targets (폐 인듐주석산화물 타겟의 재활용 기술)

  • Lee, Young-In;Choa, Yong-Ho
    • Korean Journal of Materials Research
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    • v.22 no.4
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    • pp.174-179
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    • 2012
  • In this study, we demonstrated a simple and eco-friendly method, including mechanical polishing and attrition milling processes, to recycle sputtered indium tin oxide targets to indium tin oxide nanopowders and targets for sputtered transparent conductive films. The utilized indium tin oxide target was first pulverized to a powder of sub- to a few- micrometer size by polishing using a diamond particle coated polishing wheel. The calcination of the crushed indium tin oxide powder was carried out at $1000^{\circ}C$ for 1 h, based on the thermal behavior of the indium tin oxide powder; then, the powders were downsized to nanometer size by attrition milling. The average particle size of the indium tin oxide nanopowder was decreased by increasing attrition milling time and was approximately 30 nm after attrition milling for 15 h. The morphology, chemical composition, and microstructure of the recycled indium tin oxide nanopowder were investigated by FE-SEM, EDX, and TEM. A fully dense indium tin oxide sintered specimen with 97.4% of relative density was fabricated using the recycled indium tin oxide nanopowders under atmospheric pressure at $1500^{\circ}C$ for 4 h. The microstructure, phase, and purity of the indium tin oxide target were examined by FE-SEM, XRD, and ICP-MS.

Influence of In/Sn Ratio and Precursor on the Electrical Properties of Solution-processed Indium-Tin-Oxide Electrodes (용액공정 Indium-Tin-Oxide 전극에서 In/Sn Ratio 및 Precursor가 전기적 특성에 미치는 영향)

  • Kim, Na-Young;Kim, Yong-Hoon;Han, Jeong-In
    • Proceedings of the KIEE Conference
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    • pp.2013-2014
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    • 2011
  • Indium tin oxide (ITO) thin films have been deposited onto bare glass substrates by sol-gel process. The solution was prepared by mixing indium precursor and tin precursor dissolved in 2-methoxyethanol at $75^{\circ}C$ for 12 hours. Indium tin oxide films were prepared by slowly heat up to $200^{\circ}C$ for 10 minutes and annealed at $350^{\circ}C$ for 1 hour. In this paper, we researched simple and inexpensive sol-gel process. To find the optimal ratio of In/Sn to reduce electric resistance in ITO made by sol-gel process, we assessed electric properties varying the ratio of In and Sn precursor.

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Selective Laser Direct Patterning of Indium Tin Oxide on Transparent Oxide Semiconductor Thin Films

  • Lee, Haechang;Zhao, Zhenqian;Kwon, Sang Jik;Cho, Eou Sik
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.4
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    • pp.6-11
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    • 2019
  • For a wider application of laser direct patterning, selective laser ablation of indium tin oxide (ITO) film on transparent oxide semiconductor (TOS) thin film was carried out using a diode-pumped Q-switched Nd:YVO4 laser at a wavelength of 1064 nm. In case of the laser ablation of ITO on indium gallium zinc oxide (IGZO) film, both of ITO and IGZO films were fully etched for all the conditions of the laser beams even though IGZO monolayer was not ablated at the same laser beam condition. On the contrary, in case of the laser ablation of ITO on zinc oxide (ZnO) film, it was possible to etch ITO selectively with a slight damage on ZnO layer. The selective laser ablation is expected to be due to the different coefficient of thermal expansion (CTE) between ITO and ZnO.

Indium Tin Oxide (ITO) Thin Film Fabricated by Indium-Tin-Organic sol with ITO Nanoparticle at Low Temperture

  • Hong, Sung-Jei;Chang, Sang-Gweon;Han, Jeong-In
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1334-1338
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    • 2006
  • In this work, indium tin oxide (ITO) thin film was fabricated by indium-tin-organic sol including ITO nanoparticle. ITO nanoparticle showed ultrafine size about 5 nm and (222) preferred crystal structure. Also, ITO sol-gel thin film showed good optical transmittance over 83% and electrical resistance less than $7\;{\times}\;10^3\;{\Omega}$.

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Electrical properties of Indium Zinc Tin tummy Transparent Conducting Oxide which doped impurities (Indium Zinc Tin turnary Transparent Conducting Oxide에서의 dopant 첨가에 따른 전기적 특성)

  • Seo, Han;Park, Jung-Ho;Choi, Byung-Hyun;Jy, Mi-Jung;Kim, Sea-Gee;Ju, Byeong-Kwon;Hong, Sung-Pyo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.183-183
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    • 2009
  • 본 연구에선 ITO에 사용되는 Indium의 양을 줄이기 위해 ITO와 유사한 성질을 보이는 조성인 Indium - Zinc - Tin Turnary compound를 연구하였다. 각 조성은 Indium - Zinc - Tin Turnary compound를 기본으로 하여 Zinc site에 이종원소인 Al2O3와 Ga2O3를 doping함에 따라 변화되는 전기적 특성을 살며보았다. 분석에 사용한 Ceramic pellet은 일반적인 Ceramic process를 거쳐 제작되었다. 각 조성의 전기적 특성은 TCR meter와 Hall effect analyser를 이용하여 측정하였고, X-ray diffraction measurements(XRD), Scanning Electron microscope(SEM)를 이용하여 결정학적 특성을 분석하였다.

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Characterization of zinc tin oxide thin films by UHV RF magnetron co-sputter deposition

  • Hong, Seunghwan;Oh, Gyujin;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.307.1-307.1
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    • 2016
  • Amorphous zinc tin oxide (ZTO) thin films are being widely studied for a variety electronic applications such as the transparent conducting oxide (TCO) in the field of photoelectric elements and thin film transistors (TFTs). Thin film transistors (TFTs) with transparent amorphous oxide semiconductors (TAOS) represent a major advance in the field of thin film electronics. Examples of TAOS materials include zinc tin oxide (ZTO), indium gallium zinc oxide (IGZO), indium zinc oxide, and indium zinc tin oxide. Among them, ZTO has good optical and electrical properties (high transmittance and larger than 3eV band gap energy). Furthermore ZTO does not contain indium or gallium and is relatively inexpensive and non-toxic. In this study, ZTO thin films were formed by UHV RF magnetron co-sputter deposition on silicon substrates and sapphires. The films were deposited from ZnO and SnO2 target in an RF argon and oxygen plasma. The deposition condition of ZTO thin films were controlled by RF power and post anneal temperature using rapid thermal annealing (RTA). The deposited and annealed films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM), ultraviolet and visible light (UV-VIS) spectrophotometer.

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Comparison of transparent conductive indium tin oxide, titanium-doped indium oxide, and fluorine-doped tin oxide films for dye-sensitized solar cell application

  • Kwak, Dong-Joo;Moon, Byung-Ho;Lee, Don-Kyu;Park, Cha-Soo;Sung, Youl-Moon
    • Journal of Electrical Engineering and Technology
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    • v.6 no.5
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    • pp.684-687
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    • 2011
  • In this study, we investigate the photovoltaic performance of transparent conductive indium tin oxide (ITO), titanium-doped indium oxide (ITiO), and fluorine-doped tin oxide (FTO) films. ITO and ITiO films are prepared by radio frequency magnetron sputtering on soda-lime glass substrate at $300^{\circ}C$, and the FTO film used is a commercial product. We measure the X-ray diffraction patterns, AFM micrographs, transmittance, sheet resistances after heat treatment, and transparent conductive characteristics of each film. The value of electrical resistivity and optical transmittance of the ITiO films was $4.15{\times}10^{-4}\;{\Omega}-cm$. The near-infrared ray transmittance of ITiO is the highest for wavelengths over 1,000 nm, which can increase dye sensitization compared to ITO and FTO. The photoconversion efficiency (${\eta}$) of the dye-sensitized solar cell (DSC) sample using ITiO was 5.64%, whereas it was 2.73% and 6.47% for DSC samples with ITO and FTO, respectively, both at 100 mW/$cm^2$ light intensity.

Direct indium-tin oxide (ITO) nano-patterning using ITO nano particle solution (Indium-tin oxide (ITO) 나노 입자 용액을 이용한 직접 ITO 나노 패턴 제작 기술)

  • Yang, Gi-Yeon;Yun, Gyeong-Min;Lee, Heon
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • pp.247-247
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    • 2009
  • 본 연구에서는 indium-tin oxide (ITO) 나노 입자 용액을 이용하여 간단한 공정을 통해 ITO 나노 패턴을 직접적으로 제작하는 기술에 대한 연구를 진행하였다. 이를 이용하여 300nm급 ITO 나노 dot 패턴을 제작하는데 성공하였으며 이를 glass 표면에 구현하는데 성공하였다.

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Changes in Work Function after O-Plasma Treatment on Indium-Tin-Oxide (산소 플라즈마로 처리한 ITO(Indium-Tin-Oxide)에 대한 일함수 변화)

  • 김근영;오준석;최은하;조광섭;강승언;조재원
    • Journal of the Korean Vacuum Society
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    • v.11 no.3
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    • pp.171-175
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    • 2002
  • The change in work function was studied on Indium-Tin-Oxide(ITO) surface after O-plasma treatment using $\gamma$-Focused ion Beam($\gamma$-FIB). As the surface of ITO experienced more O-plasma treatment, both the surface resistivity and the work function got higher. Auger Electron Spectroscopy identified the increase of oxygen as well as the decrease of Sn. The rise of work function and surface resistivity is considered to be due to the change in oxygen and Sn on the surface of ITO.

Synthesis of IZTO(Indium Zinc Tin Oxide) particle by spray pyrolysis and post-heat treatment and characterization of deposited IZTO film

  • Lim, Seong Taek;Kim, Sang Hern
    • Journal of the Korean Applied Science and Technology
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    • v.33 no.4
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    • pp.734-740
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    • 2016
  • The micron-sized indium zinc tin oxide (IZTO) particles were prepared by spray pyrolysis from aqueous precursor solution for indium, zinc, and tin and organic additives such as citric acid (CA) and ethylene glycol (EG) were added to aqueous precursor solution for indium, zinc, and tin. The obtained IZTO particles prepared by spray pyrolysis from the aqueous solution without organic additives had spherical and filled morphologies, whereas the IZTO particles obtained with organic additives had more hollow and porous morphologies. The micron-sized IZTO particles with organic additives were changed fully to nano-sized IZTO particles, whereas the micron-sized IZTO particles without organic additives were not changed fully to nano-sized IZTO particle after post-treatment at $700^{\circ}C$ for 2 hours and wet-ball milling for 24 hours. Surface resistances of micron-sized IZTO's before post-heat treatment and wet-ball milling were much higher than those of nano-sized IZTO's after post-heat treatment and wet-ball milling. From IZTO with composition of 80 wt. % $In_2O_3$, 10 wt. % ZnO, and 10 wt. % $SnO_2$ which showed a smallest surface resistance IZTO after post-heat treatment and wet-ball milling, thin films were deposited on glass substrates by pulsed DC magnetron sputtering, and the electrical and optical properties were investigated.