• Title, Summary, Keyword: ITO film

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Transparent ITO/Ag/i-ZnO Multilayer Thin Film enhances Lowing Sheet Resistance

  • Kim, Sungyoung;Kim, Sangbo;Heo, Jaeseok;Cho, Eou-Sik;Kwon, Sang Jik
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.187-187
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    • 2015
  • The past thirty years have seen increasingly rapid advances in the field of Indium Tin Oxide (ITO) transparent thin film.[1] However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials.[2] So far, in order to overcome this disadvantage, we show a transparent ITO/Ag/i-ZnO multilayer thin film electrode can be the solution. In comparison with using amount of ITO as a transparent conducting material, intrinsic-Zinc-Oxide (i-ZnO) based on ITO/Ag/i-ZnO multilayer thin film showed cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report ITO/Ag/i-ZnO multilayer thin film properties by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately $40{\Omega}/{\square}$ at same visible light transmittance.(minimal point $5.2{\Omega}/{\square}$). Tendency, which shows lowly sheet resistive in a certain transmittance, has been observed, hence, it should be suitable for transparent electrode device.

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Study of Magnetic Field Shielded Sputtering Process as a Room Temperature High Quality ITO Thin Film Deposition Process

  • Lee, Jun-Young;Jang, Yun-Sung;Lee, You-Jong;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.288-289
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    • 2011
  • Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

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High Conductive Transparent Electrode of ITO/Ag/i-ZnO by In-Line Magnetron Sputtering Method (인-라인 마그네트론 스퍼터링 방법에 의한 고전도성 ITO/Ag/i-ZnO 투명전극)

  • Kim, Sungyong;Kwon, Sangjik
    • Journal of the Semiconductor & Display Technology
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    • v.14 no.3
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    • pp.33-36
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    • 2015
  • It has increased several decades in the field of Indium Tin Oxide (ITO) transparent thin film, However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials[1]. So far, in order to overcome this disadvantage, we show that a transparent ITO/Ag/i-ZnO multilayer thin film electrode would be more cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report the properties of ITO/Ag/i-ZnO multilayer thin film by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately $40{\Omega}/{\Box}$ at same visible light transmittance. (minimal point $5.2{\Omega}/{\Box}$). Tendency, which shows lowly sheet resistive in a certain transmittance, has been observed, hence, it should be suitable for transparent electrode device.

A Study on the Resistance and Crack Propagation of ITO/PET Sheet with 20 nm Thick ITO Film (20 nm 두께의 ITO층이 코팅된 ITO/PET Sheet의 저항 및 균열형성 특성 연구)

  • Kim, Jin-Yeol;Hong, Sun-Ig
    • Journal of the Korean Ceramic Society
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    • v.46 no.1
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    • pp.86-93
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    • 2009
  • The crack formation and the resistance of ITO film on PET substrate with a thickness of 20 nm were investigated as a function of strain. The onset strain for the increase of resistance increased with increasing strain rate, suggesting the crack initiation is dependent on the strain rate. Electrical resistance increased at the strain of 1.6% at the strain rates below $10^{-4}/sec$ while it increased at ${\sim}2%$ at the strain rates above $10^{-3}/sec$. The critical strain at which the cracks were formed is close to the proportional limit. Upon loading, the initial cracks perpendicular to the tensile axis were observed and propagated the whole sample width with increasing strain. The spacing between horizontal cracks is thought to be determined by the fracture strength and the interfacial strength between ITO and PET. The crack density increased with increasing strain. However, the effect of the strain rate on the crack density was less pronounced in ITO/PET with 20 nm ITO thickness than ITO/PET with 125 nm ITO thickness, the strength of ITO film is thought to increase as the thickness on ITO film decreases. The absence of cracks on ITO film at a strain as close as 1.5% can be attributed to the compressive residual stress of ITO film which was developed during cooling after the coating process. The higher critical strain for the onset of the resistance increase and the crack initiation of ITO/PET with a thinner ITO film (20 nm) can be linked with the higher strength of the thinner ITO film.

Microstructure and Properties of ITO and ITO/Ag/ITO Multilayer Thin Films Prepared by D.C. Magnetron Sputtering (D.C. 마그네트론 스퍼터링법으로 제조한 ITO 및 ITO/Ag/ITO 박막의 미세조직과 투명 전극 특성)

  • Choi, Yong-Lak;Kim, Seon-Hwa
    • Korean Journal of Materials Research
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    • v.16 no.8
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    • pp.490-496
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    • 2006
  • ITO monolayer and ITO/Ag/ITO multilayer thin films are prepared by D.C. magnetron sputtering method. Ag layer was inserted for applying ITO to a flexible substrate at low temperature. Carrier concentration and carrier mobility of ITO and ITO/Ag/ITO thin films were measured, the transmittance of them also was done. The amorphous phase was confirmed to be combined in addition to (400) and (440) peaks from XRD result of ITO thin film. As the substrate temperature increased, the preferred orientation of (400) appeared. From the result of application of Ag layer at room temperature, the growth of columnar structure was inhibited, and the amorphous phase formed mostly. The ITO/Ag/ITO thin film represented the transmittance of above 80% when the thickness of Ag layer was 50 ${\AA}$, and the concentration of carrier increased up to above 10 times than that of ITO thin film. Finally, since very low resistance of 3.9${\Omega}/{\square}$ was observed, the effective application of low temperature process is expected to be possible for ITO thin film.

Electrical Properties of ITO/Ag/ITO Conducting Transparent Thin Films (ITO/Ag/ITO 투명전도막의 전기적 특성)

  • Chae, Hong-Chol;Baeg, Chang-Hyun;Hong, Joo-Wha
    • Korean Journal of Metals and Materials
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    • v.49 no.2
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    • pp.192-196
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    • 2011
  • The multi-layered thin film with an ITO/Ag/ITO structure was produced on PET by using magnetron reactive sputtering method. First, 30 nm of ITO thin film was coated on PET by using normal temperature process. Then 20-52 nm of the Ag thin film was coated. Lastly, 30 nm of ITO thin film was coated on Ag layer. The sample of the 20 nm Ag thin film showed more than 70% transmission and a $2.7{\Omega}/{\Box}$ sheet resistance. When compared to the existing single-layered transparent conducting thin film, multi-layered film was found to be superior with about $5{\Omega}/{\Box}$ less sheet resistance. However, since the Ag layer became thinner, the band gap energy needs to be increased to more than 3.5 eV.

Temperature Maintenance of an ITO Nanoparticle Film Heater (ITO 나노입자 면상발열체의 온도유지에 대한 연구)

  • Yang, Kyungwhan;Cho, Kyoungah;Im, Kiju;Kim, Sangsig
    • Journal of IKEEE
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    • v.20 no.2
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    • pp.171-173
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    • 2016
  • In this study, we fabricate a high efficiency heater consisting of the indium tin oxide (ITO) nanoparticle (NP)-paste and polydimethylsiloxane (PDMS) and investigate the effect of PDMS on temperature maintenance of the heater through the comparison with the PDMS-free ITO film heater. Compared to the ITO film heater, the temperature of the PDMS/ITO film heater lasts 1.5 times longer. And the power consumption of the PDMS/ITO film heater is reduced by 35%, owing to the low thermal conductivity of the PDMS layer.

Ohmic Contact Effect and Electrical Characteristics of ITO Thin Film Depending on SiOC Insulator (SiOC 절연박막 특성에 의존하는 ITO 투명박막의 전기적인 특성과 오믹접합의 효과)

  • Oh, Teresa
    • Korean Journal of Materials Research
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    • v.25 no.7
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    • pp.352-357
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    • 2015
  • To research the characteristics of ITO film depending on a polarity of SiOC, specimens of ITO/SiOC/glass with metal-insulator-substrates (MIS) were prepared using a sputtering system. SiOC film with 17 sccm of oxygen flow rate became a non-polarity with low surface energy. The PL spectra of the ITO films deposited with various argon flow rates on SiOC film as non-polarity were found to lead to similar formations. However, the PL spectra of ITO deposited with various argon flow rates on SiOC with polarity were seen to have various features owing to the chemical reaction between ITO and the polar sites of SiOC. Most ITO/SiOC films non-linearly showed the Schottky contacts and current increased. But the ITO/SiOC film with a low current demonstrated an Ohmic contact.

Modeling of Indium Tin Oxide(ITO) Film Deposition Process using Neural Network (신경회로망을 이용한 ITO 박막 성장 공정의 모형화)

  • Min, Chul-Hong;Park, Sung-Jin;Yoon, Neung-Goo;Kim, Tae-Seon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.9
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    • pp.741-746
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    • 2009
  • Compare to conventional Indium Tin Oxide (ITO) film deposition methods, cesium assisted sputtering method has been shown superior electrical, mechanical, and optical film properties. However, it is not easy to use cesium assisted sputtering method since ITO film properties are very sensitive to Cesium assisted equipment condition but their mechanism is not yet clearly defined physically or mathematically. Therefore, to optimize deposited ITO film characteristics, development of accurate and reliable process model is essential. For this, in this work, we developed ITO film deposition process model using neural networks and design of experiment (DOE). Developed model prediction results are compared with conventional statistical regression model and developed neural process model has been shown superior prediction results on modeling of ITO film thickness, sheet resistance, and transmittance characteristics.

Study for Transmittance Changes with the Thicknesses of ITO and Water-repellent Films of Ophthalmic Lens (ITO 와 발수 박막의 두께에 따른 안경렌즈 투과율 변화에 관한 연구)

  • Park, Moon Chan
    • The Korean Journal of Vision Science
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    • v.19 no.2
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    • pp.139-147
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    • 2017
  • Purpose: This study is to observe transmittance changes with the thicknesses of ITO and waterrepellent films of Ophthalmic lens. Metnod: ITO, water-repellent, $SiO_2$, $ZrO_2$, hard coating films were coated by electron beam evaporation or a dipping apparatus. The refractive index and extinction coefficient of them with wavelength were obtained using spectrophotometer or ellipsometer. With these data, we observed the changes of transmittances depending on the thicknesses of ITO and water-repellent films of a flat Ophthalmic lens using the Essential Macleod program. The multilayer was designed as [air/water-repellent film/ ITO/ AR coating multilayer($SiO_2$, $ZrO_2$) / hard coating(1.553)/ lens(1.56)]. Results: The optimum average transmittance in the absence of ITO and water-repellent films was about 99.5% from wavelength 400 nm to 700 nm. Since the reflectance at the front and back of a flat Ophthalmic lens was similar, the total average transmittance of the lens was about 99%. When the thickness of ITO film was increased at fixing the thickness of water-repellent film, the transmittance of the visible light in the short wavelength was much decreased with compared to that of the long wavelength. When the thickness of the water-repellent film was increased at fixing the thickness of ITO thin film, the transmittance of the long wavelength was decreased. The transmittance of the short wavelength was also decreased up to 50nm thickness, and then increased above that. Conclusion: When the thickness of ITO film was increased, the transmittance in the short wavelength was much decreased than that of the long wavelength. When the thickness of water-repellent film was increased, the transmittance of the long wavelength was decreased while the transmittance of the short wavelength was decreased up to 50nm thickness but increased above that.