• Title, Summary, Keyword: Graphene

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Influence of carbon black on electrochemical performance of graphene-based electrode for supercapacitor (슈퍼커패시터를 위한 그래핀 기반 전극의 전기화학적 특성에 대한 카본블랙 도입의 효과)

  • Kim, Ki-Seok;Park, Soo-Jin
    • 한국신재생에너지학회:학술대회논문집
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    • pp.95.1-95.1
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    • 2011
  • In this work, graphene was prepared by modified Hummers method and prepared graphene was applied to electrode materials for supercapacitor. In addition, to enhance the electrochemical performance of graphene, carbon black was deposited onto graphene via chemical reduction. The effect of the carbon black content incorporated on the electrochemical properties of the graphene-based electrodes was investigated. It was found that nano-scaled carbon black aggregates were deposited and dispersed onto the graphene by the chemical reduction of acid treated carbon black and graphite oxide. From the cyclic voltammograms, carbon black-deposited graphene (CB-GR) showed improved electrochemical performance, i.e., current density, quicker response, and better specific capacitance than that of pristine graphene. This indicates that the carbon black deposited onto graphene served as an conductive materials between graphene layers, leading to reducing the contact resistance of graphene and resulted in the increase of the charge transfer between graphene layers by bridge effect.

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Fabrication of One-Dimensional Graphene Metal Edge Contact without Graphene Exfoliation

  • Choe, Jeongun;Han, Jaehyun;Yeo, Jong-Souk
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.371.2-371.2
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    • 2016
  • Graphene electronics is one of the promising technologies for the next generation electronic devices due to the outstanding properties such as conductivity, high carrier mobility, mechanical, and optical properties along with extended applications using 2 dimensional heterostructures. However, large contact resistance between metal and graphene is one of the major obstacles for commercial application of graphene electronics. In order to achieve low contact resistance, numerous researches have been conducted such as gentle plasma treatment, ultraviolet ozone (UVO) treatment, annealing treatment, and one-dimensional graphene edge contact. In this report, we suggest a fabrication method of one-dimensional graphene metal edge contact without using graphene exfoliation. Graphene is grown on Cu foil by low pressure chemical vapor deposition. Then, the graphene is transferred on $SiO_2/Si$ wafer. The patterning of graphene channel and metal electrode is done by photolithography. $O_2$ plasma is applied to etch out the exposed graphene and then Ti/Au is deposited. As a result, the one-dimensional edge contact geometry is built between metal and graphene. The contact resistance of the fabricated one-dimensional metal-graphene edge contact is compared with the contact resistance of vertically stacked conventional metal-graphene contact.

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Graphene Flakes를 이용한 전극 제작

  • Kim, Seong-Hui;O, Jong-Sik;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.201-201
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    • 2013
  • ITO는 투명하면서도 전도성이 매우 높은 물질로 디스플레이 분야에서 전극으로 많이 사용된다. 하지만 ITO는 세라믹 물질이기 때문에 공정 단가가 높고, 유연성이 낮아 구부릴 경우 전도성이 파괴되며 충격에도 약하여 flexible한 소자에 적용할 수 없다. 또한 metal diffusion이 잘 일어나는 물질이기 때문에 OLED 소자의 특성을 저해한다. 이와 같은 문제점을 해결하기 위해 ITO를 대체하여 graphene을 이용한 투명전극 연구개발이 활발히 진행되고 있다. Graphene은 높은 mobility와 전도도를 가지고 있으며, 높은 열전도성, Young's modulus, 그리고 mechanical flexibility를 가진 물질이다. 최근에 이러한 장점들로 인해 ITO를 대체하는 물질로서 각광을 받고 있지만 graphene은 Cu, Ni과 같은 금속표면에 한정되어 성장하는 문제점을 가지고 있다. 이 graphene 합성방법은 전사과정을 필요로 하며, 이로 인해 낮은 생산성과 낮은 수율을 야기한다. 최근 높은 생산성을 가지는 graphene 전극을 만들기 위해 Reduced Graphene Oxide (rGO) 연구가 활발히 진행되고 있다. 그러나 rGO는 산화환원 과정에서 전기전도도와 electron mobility가 완벽히 회복되지 못한다는 문제점을 가지고 있다. 그리하여 본 연구에서는 높은 투과도와 높은 전도도를 갖는 graphene 전극을 얻기 위해서 powdered graphene flake를 사용하였다. Graphene flake를 IPA solvent에 분산시키기 위해 sonicator과 homogenizer를 이용하여 Graphene flake solution을 제작하였다. 그리고 uniform한 전극을 만들기 위해 Spray Coating 방법을 이용하여 PET 기판 위에 graphene flake를 증착시켰다. graphene flake를 이용하여 높은 투과도와 낮은 면저항을 갖는 투명전극을 제작하고, 그 특성을 UV-visible spectrophotometer과 four point probe를 이용하여 확인하였다.

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Effects of Optically-modulated Metal-graphene Contact on the Photoresponsivity of Graphene Photodetectors (빛에 의해 변조되는 금속-그래핀 컨택이 그래핀 포토디텍터의 광응답도에 미치는 영향)

  • Lee, Chang-Ju;Shim, Jae Hoon;Park, Hongsik
    • Journal of Sensor Science and Technology
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    • v.28 no.2
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    • pp.117-120
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    • 2019
  • Graphene is recognized as a promising material for silicon photonics, since it has a wide optical-window that entirely covers the optical communication wavelength region ($1.3{\sim}1.6-{\mu}m$) and extremely high-carrier mobility that makes it possible to fabricate the high-speed photodetectors. However, the maximum absorbance of monolayer graphene is only 2.3%, which limits the photoresponse characteristics of graphene photodetectors. As a result, a low photoresponsivity of graphene photodetector is a critical issue limiting the use of graphene photodetectors in the optical communications field. In this paper, we investigated effects of optically-modulated metal-graphene contact on the photoresponsivity of graphene photodetectors. The optical modulation of the contact resistance mainly determined the photoresponse characteristics of graphene photodetectors. The Ni-contact graphene photodetector which has a characteristic of the significant optical modulation of metal-graphene contact showed a higher photoresponsivity than the Pd-contact device. This work will provide a way to improve the photoresponse characteristics of graphene-based photodetector and contribute to the development of high-speed/high-responsivity graphene photodetector.

Conformal Zinc Oxide Thin Film Deposition on Graphene using molecular linker by Atomic Layer Deposition

  • Park, Jin-Seon;Han, Gyu-Seok;Jo, Bo-Ram;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.280.2-280.2
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    • 2016
  • The graphene, a single atomic sheet of graphite, has attracted tremendous interest owing to its novel properties including high intrinsic mobility, optical transparency and flexibility. However, for more diverse application of graphene devices, it is essential to tune its transport behavior by shifting Dirac Point (DP) of graphene. So, in the following context, we suggest a method to tune structural and electronic properties of graphene using atomic layer deposition. By atomic layer deposition of zinc oxide (ZnO) on graphene using 4-mercaptophenol as linker, we can fabricate n-doped graphene. Through ${\pi}-{\pi}$ stacking between chemically inert graphene and 4-mercaptophenol, conformal deposition of ZnO on graphene was enabled. The electron mobility of graphene TFT increased more than 3 times without considerably decreasing the hole mobility, compared to the pristine graphene. Also, it has high air stability. This ZnO doping method by atomic layer deposition can be applicable to large scale array of CVD graphene TFT.

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Improvement Performance of Graphene-MoS2 Barristor treated by 3-aminopropyltriethoxysilane (APTES)

  • O, Ae-Ri;Sim, Jae-U;Park, Jin-Hong
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.291.1-291.1
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    • 2016
  • Graphene by one of the two-dimensional (2D) materials has been focused on electronic applications due to its ultrahigh carrier mobility, outstanding thermal conductivity and superior optical properties. Although graphene has many remarkable properties, graphene devices have low on/off current ratio due to its zero bandgap. Despite considerable efforts to open its bandgap, it's hard to obtain appropriate improvements. To solve this problem, heterojunction barristor was proposed based on graphene. Mostly, this heterojunction barristor is made by transition metal dichalcogenides (TMDs), such as molybdenum disulfide ($MoS_2$) and tungsten diselenide ($WSe_2$), which have extremely thickness scalability of TMDs. The heterojunction barristor has the advantage of controlling graphene's Fermi level by applying gate bias, resulting in barrier height modulation between graphene interface and semiconductor. However, charged impurities between graphene and $SiO_2$ cause unexpected p-type doping of graphene. The graphene's Fermi level modulation is expected to be reduced due to this p-doping effect. Charged impurities make carrier mobility in graphene reduced and modulation of graphene's Fermi level limited. In this paper, we investigated theoretically and experimentally a relevance between graphene's Fermi level and p-type doping. Theoretically, when Fermi level is placed at the Dirac point, larger graphene's Fermi level modulation was calculated between -20 V and +20 V of $V_{GS}$. On the contrary, graphene's Fermi level modulation was 0.11 eV when Fermi level is far away from the Dirac point in the same range. Then, we produced two types heterojunction barristors which made by p-type doped graphene and graphene treated 2.4% APTES, respectively. On/off current ratio (32-fold) of graphene treated 2.4% APTES was improved in comparison with p-type doped graphene.

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Mechanisms of Na adsorption on graphene and graphene oxide: density functional theory approach

  • Moon, Hye Sook;Lee, Ji Hye;Kwon, Soonchul;Kim, Il Tae;Lee, Seung Geol
    • Carbon letters
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    • v.16 no.2
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    • pp.116-120
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    • 2015
  • We investigated the adsorption of Na on graphene and graphene oxide, which are used as anode materials in sodium ion batteries, using density functional theory. The adsorption energy for Na on graphene was -0.507 eV at the hollow sites, implying that adsorption was favorable. In the case of graphene oxide, Na atoms were separately adsorbed on the epoxide and hydroxyl functional groups. The adsorption of Na on graphene oxide-epoxide (adsorption energy of -1.024 eV) was found to be stronger than the adsorption of Na on pristine graphene. However, the adsorption of Na on graphene oxide-hydroxyl resulted in the generation of NaOH as a by-product. Using density of states (DOS) calculations, we found that the DOS of the Na-adsorbed graphene was shifted down more than that of the Na-adsorbed graphene oxide-epoxide. In addition, the intensity of the DOS around the Fermi level for the Na-adsorbed graphene was higher than that for the Na-adsorbed graphene oxide-epoxide.

Electronic structure of B- or N-doped graphene

  • Kim, Jae-Hee;Min, Kyung-Ah
    • Proceeding of EDISON Challenge
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    • pp.412-414
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    • 2014
  • In this study, we investigate atomic and electronic structure of graphene with substitutional impurities such as boron or nitrogen atom using density functional theory (DFT) calculations. To investigate the effects of substitutional impurities in graphene, we consider a ($6{\times}6$) supercell of graphene in our calculations. For detailed electronic properties of graphene, we compare the energy band structure of B- or N-doped graphene with that of pristine graphene.

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Graphene Cleaning by Using Argon Inductively Coupled Plasma

  • Im, Yeong-Dae;Lee, Dae-Yeong;Ra, Chang-Ho;Yu, Won-Jong
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.197-197
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    • 2012
  • Device 제작에 사용된 graphene은 일반적인 lithography 공정에서 resist residue에 의한 오염을 피할 수 없으며 이로 인하여 graphene의 pristine한 성질을 잃어버린다. 본 연구에서는 graphene을 저밀도의 argon inductively coupled plasma (Ar-ICP)를 통해 처리함으로서 graphene based back-gated field effect transistor (G-FET)의 특성변화를 유도한 결과에 대해서 보고한다. Argon capacitively coupled plasma (Ar-CCP)은 에 노출된 graphene은 강한 ion bombardment energy로 인하여 쉽게 planar C-C ${\pi}$ bonding (bonding energy: 2.7 eV)이 breaking되어 graphene의 defect이 발생되었다. 하지만 우리의 경우 저밀도의 Ar-ICP가 적용될 때 graphene의 defect이 제한되며 이와 동시에 contamination 만을 제거할 수 있었다. 소자의 전기적 측정 (Gsd-Vbg)을 통하여 contamination으로 인하여 p-doping된 graphene은 pristine 상태로 회복되었으며 mobility도 회복됨이 확인되었다. Ar-ICP를 이용한 graphene cleaning 방법은 저온공정, 대면적 공정, 고속공정을 모두 만족시키며 thermal annealing, electrical current annealing을 대체하여 graphene 기반 소자를 생산함에 있어 쉽고 빠르게 적용할 수 있는 강점이 있다.

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Analysis of a Graphene-Based Silicon Electro-Absorption Modulator in Isotropic and Anisotropic Graphene Models

  • Park, Byoung Jun;Kim, Myung-Ki;Kim, Jin Tae
    • Journal of the Korean Physical Society
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    • v.70 no.11
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    • pp.967-972
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    • 2017
  • We theoretically investigated a graphene-based silicon electro-absorption modulator in both isotropic and anisotropic graphene models. Regardless of the graphene model, the optical transmission increases with the chemical potential of graphene because of the Pauli blocking principle. However, we found that the modulator based on the isotropic graphene exhibits an abrupt decrease in transmission for the transverse-magnetic (TM) polarization mode due to the epsilon-near-zero effect in the isotropic graphene at a certain chemical potential. Conversely, the anisotropic graphene-based modulator exhibits no such transmission dip. These particular behaviors provide us with a simple and easy experimental way to confirm whether graphene is an isotropic or anisotropic material. To further enhance the transmission dip in the isotropic graphene model, we suggest a simply modified modulator structure that increases the transmission depth by ${\sim}0.5dB/{\mu}m$ for the TM polarization mode.