• Title, Summary, Keyword: FBAR

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Fabrication Techniques & Resonance Characteristics of FBAR Devices (FBAR 소자의 제작기법 및 공진특성)

  • Yoon, Gi-Wan;Song, Hae-Il;Lee, Jae-Young;Mai, Linh;Kabir, S.M. Humayun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.11
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    • pp.2090-2094
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    • 2007
  • Film bulk acoustic wave resonator(FBAR) technology has attracted a great attention as a promising technology to fabricate the next-generation RF filters mainly because the FBAR technology can be integrated with current Si processing. The RF filters are basically composed of several FBAR devices connected in parallel and in series, and their characteristics depend highly on the FBAR device characteristics. Thus, it is important to design high quality FBAR devices by device or process optimization. This kind of effort may enhance the FBAR device characteristics, eventually leading to FBAR filters of high performance. In this paper, we describe the methods to more effectively improve the resonance characteristics of the FBAR devices.

FBAR devices for RF bandpass filter applications (RF 대역통과필터 응용을 위한 FBAR 소자)

  • Giwan Yoon;Park, Sungchang
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • pp.621-625
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    • 2001
  • In this article, piezoelectric films and their application for film bulk acoustic resonator (FBAR) devices are presented. The FBAR is composed of piezoelectric film sandwiched between top and bottom electrodes and an acoustic reflector of SiO$_2$/W slatted multilayers. Various FBAR devices were fabricated and evaluated through simulation and measurement. The insertion loss, return loss and Q-factor were observed to be reasonably high and good. The FBAR technology seems very promising particularly for RF band filter application.

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FBAR devices for RF bandpass filter applications (박막형 FBAR 공진기 설계 및 제작)

  • Yoon, Gi-Wan;Park, Sung-Chang
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.5 no.7
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    • pp.1321-1325
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    • 2001
  • In this article, piezoelectric films and their application for film bulk acoustic resonator (FBAR) devices are presented. The FBAR is composed of piezoelectric film sandwiched between top and bottom electrodes and an acoustic reflector of SiO2/W stacked multilayers. Various FBAR devices were fabricated and evaluated through simulation and measurement. The insertion loss, return loss and Q-factor were observed to be reasonably high and good. The FBAR technology seems very promising particularly for RF band filter application.

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Fabrication Techniques and Their Resonance Characteristics of FBAR Devices

  • Yoon, Gi-Wan;Song, Hae-Il;Lee, Jae-Young;Mai, Linh;Kabir, S. M. Humayun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • pp.204-207
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    • 2007
  • Film bulk acoustic wave resonator (FBAR) technology has attracted a great attention as a promising technology to fabricate the next-generation RF filters mainly because the FBAR technology can be integrated with current Si processing. The RF filters are basically composed of several FBAR devices connected in parallel and in series, and their characteristics depend highly on the FBAR device characteristics. Thus, it is important to design high quality FBAR devices by device or process optimization. This kind of effort may enhance the FBAR device characteristics, eventually leading to FBAR filters of high performance. In this paper, we describe the methods to more effectively improve the resonance characteristics of the FBAR devices.

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Method of Material Constants Extraction in Thin-Film Bulk Acoustic Resonator(FBAR) using Genetic Algorithm (유전자 알고리즘을 이용한 압전 박막 음향 공진기에서의 물질 상수 추출 기법)

  • 이정흠;정재용;김형동
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.4
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    • pp.323-329
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    • 2003
  • In this paper, the method of material constants extraction in a thin-film bulk acoustic resonator(FBAR) using a genetic algorithm(GA) is proposed. The material constants are extracted from the input impedance of a FBAR by a GA optimizer. The characteristics of the FBAR input impedance affected by the material constants were studied to decide the fitness function for GA. As a result, the fitness was estimated by the series- and parallel -resonance frequencies and the FBAR bandwidth, as determined from the input impedance of the FBAR. A flowchart for the GA and a procedure fur the proposed extraction method are explained in detail, and the results of the material constants extraction are presented.

Cost-effective and High-performance FBAR Duplexer Module with Wafer Level Packaging (웨이퍼 레벨 패키지를 적용한 저가격 고성능 FBAR 듀플렉서 모듈)

  • Bae, Hyun-Cheol;Kim, Sung-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.5
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    • pp.1029-1034
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    • 2012
  • This paper presents a cost-effective and high-performance film bulk acoustic resonator (FBAR) duplexer module for US-PCS handset applications. The FBAR device uses a glass wafer level packaging process, which is a more cost-effective alternative to the typical silicon capping process. The maximum insertion losses of the FBAR duplexer at the Tx and Rx bands are of 1.9 and 2.4 dB, respectively. The total thickness of the duplexer module is 1.2 mm, including the glass-wafer bonded Tx/Rx FBAR devices, PCB board, and transfer molding material.

Comparison of Resonance Characteristics in FBAR Devices by Thermal Treatments

  • Mai Linh;Song Hae-il;Yoon Giwan
    • Journal of information and communication convergence engineering
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    • v.3 no.3
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    • pp.137-141
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    • 2005
  • The paper presents some methods to improve characteristics of film bulk acoustic resonator (FBAR) devices. The FBAR devices were fabricated on Bragg reflectors. Thermal treatments were done by sintering and/or annealing processes. The measurement showed a considerable improvement of return loss $(S_{11})$ and quality factor $(Q_{s/p}).$ These thermal treatment techniques seem very promising for enhancing FBAR resonance performance.

RF MEMS 기법을 이용한 US PCS 대역 FBAR BPF 개발

  • 박희대
    • The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.3
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    • pp.15-19
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    • 2003
  • In This paper, we developed 1.96 GHz air gap type FBAR BPF using ZnO as piezoelectric sputtered by RF magnetron at room temperature. FBAR BPF was fabricated by sputtering bottom electrode (Al), ZnO as piezoelectric and top electrode (Mo) on Si wafer one by one with RF magnetron sputter, then Si was dry etched to make an air hole. XRD test result of fabricated FBAR BPF showed that ZnO crystal was well pre-oriented as (002) and sigma value of XRC was 1.018. IL(Insertion loss) showed excellent result as 1 dB.

FBAR devices employing the ZnO:N films (질소 주입된 산화아연 박막을 사용한 박막 음향 공진 소자 연구)

  • Lee, Eun-Ju;Zhang, Ruirui;Yoon, Gi-Wan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • pp.696-698
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    • 2011
  • We present a new method for the fabrication of film bulk acoustic wave resonator (FBAR) devices that exploits the thin piezoelectric ZnO films particularly sputter-deposited in a mixture of N2O and Ar gases as the reactive and sputtering gases, respectively. Some thermal annealing treatments were performed on the as-deposited ZnO films and also their effects on the resonance characteristics of the FBAR devices were investigated. It was found that with an optimized process, the resonance characteristics of the fabricated FBAR devices could be further improved.

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Frequency Characteristics of a FBAR using ZnO Thin Film (ZnO 압전박막을 이용한 FBAR의 주파수 응답특성)

  • Do, Seung-Woo;Jang, Cheol-Yeong;Choi, Hyun-Chul;Lee, Yong-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.94-97
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    • 2003
  • This study uses ZnO thin film as a piezoelectric material and Pt as bottom electrode for FBAR (film bulk acoustic resonator) device. ZnO thin film and Pt were deposited by RF-magnetron sputtering method. ZnO thin film and Pt were oriented to c-axis. Top electrode Al was deposited by thermal evaporation. The membrane was formed of bulk micromachining. The FBAR was evaluated by XRD, SEM and electrical characterization. The resonant frequency was measured by HP 8753C Network Analyzer. A fabricated FBAR device exhibited a resonant frequency of 700 MHz ~ 1.5 GHz. When bottom electrode and top electrode thickness were fixed, the resonant frequency was increased as decreasing ZnO thin film thickness.

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