• Title, Summary, Keyword: Etch rate

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Study on the Etching Profile and Etch Rate of $SiO_2/Si_3N_4$ by Ar Gas Addition to $CF_4/O_2$ Plasma ($CF_4/O_2$ Plasma에 Ar첨가에 따른 $SiO_2/Si_3N_4$ 에칭 특성 변화)

  • Kim, Boom-Soo;Kang, Tae-Yoon;Hong, Sang-Jeen
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.127-128
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    • 2009
  • CCP방식의 식각에 있어서 CF4/O2 Plasma Etch에 Ar을 첨가함으로써 Etch특성이 어떻게 변화하는지를 조사하였다. FE-SEM를 이용하여 Etch Profile를 측정하였다. 또한 Elipsometer와 Nanospec을 이용하여 Etch rate를 측정하였다. Ar의 비율이 전체의 47%정도를 차지하였을 때까지 Etch Profile이 향상되었다가 그이후로는 다시 감소하는 것을 볼 수 있었다. Ar을 첨가할수록 etch rate은 계속 향상되었다. Ar을 첨가하는 것은 물리적인 식각으로 반응하여 Etch rate의 향상과 적정량의 Ar을 첨가했을 때 Etch profile이 향상되는 결과를 얻었다.

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Experimental Study of Reactive Ion Etching of Tungsten Films Using $SF_6$ Plasma ($SF_6$플라즈마를 이용한 텅스텐 박막의 반응성이온식각에 관한 실험적 연구)

  • 박상규;서성우;이시우
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.7
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    • pp.60-74
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    • 1993
  • Experiments of RIE of tungsten films using SF$_{6}$ plasma were conducted to investigate the effect of process parameters on etch rate, uniformity, anisotropy, and selectivity. As power increased, the etch rate increased. Maximum etch rate was obtained at 200mtorr As interelectrode spacing increased the etch rate increased for P < 200mtorr while it decreased for P> 200mtorr. Etch rate was maximum at 20 sccm gas flow rate. As substrate temperature increased, the etch rate increased and activation energy was 0.046 eV. In addition, maximum etch rate was acquired at 20% $O_{2}$ addition. The etch rate slightly increased when Ar was added up to 20% while it continuously decreased when N$_{2}$ was added. Uniformity got improved as pressure decreased and was less than 4% for P <100mtorr. Mass spectrometer was utilized to analyze gas composition and S and F peaks were observed from XPS analysis with increasing power. The anisotropy was better for smaller power and spacing, and lower pressure and temperature. It improved when CH$_{4}$ was added and anisotropic etch profile was obtained when about 10% $O_{2}$ was added. The selectjvity was better for smaller power larger pressure and spacing, and lower temperature. Especially. low temperature processing was proposed as a novel method to improve the anisotropy and selectivity.

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Dopant에 따른 amorphous carbon layer의 etch rate 변화 분석연구

  • Jeong, Won-Jun;Kim, Dong-Bin;Park, Sang-Hyeon;Im, Seong-Gyu;Kim, Yong-Seong;Lee, Chang-Hui;Yun, Ju-Yeong;Kim, Tae-Seong;Sin, Jae-Su;Gang, Sang-U
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.92.2-92.2
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    • 2015
  • Negative-AND (NAND) flash의 대용량 및 소형화로 인해 10 nm급 공정을 도입한 128 Gb NAND flash가 개발된 이래, 공정이 미세화되면서 셀이 작이지고 간격이 좁아지게 되었다. 이로 인해 전자가 누설되는 간섭현상이 심화되게 된다. 이러한 문제를 해결하기 위해 기존 NAND의 평면 구조를 수직으로 적층하는 3D NAND 기술이 개발되었으며 차세대 소자를 위한 필수 기술로 각광받고 있다. 3D NAND에서 channel hole etching시 고 선택 비의 중요도가 증가하여 증착막 보호 역할을 하는 hardmask의 두께가 증가하게 되었으며 기존 하드마스크 대비 내식각성이 2배 이상 향상된 hard material 개발이 필요한 실정이다. 본 연구에서는 dopant에 따른 amorphous carbon layer (ACL)의 etch rate의 변화량을 Raman spectroscopy등의 측정장비를 이용하여 비교분석 하였다. dopant의 각각 유량별에 대한 etch rate 변화의 영향성을 비교하였다. dopant의 유량에 따라 etch rate이 변화하는 것을 관찰할 수 있었으며, 2000 sccm 이후에는 etch rate이 급격히 감소하는 경향을 보였다. Raman 측정결과, etch rate의 감소에 따라 G-peak의 red shift가 발생하였으며 두 peak 간의 차이 값이 etch rate의 변화율과 유사한 경향을 보이는 것을 확인하였다.

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Effects of Ar Addition on the Etch Rates and Etch Profiles of Si Substrates During the Bosch Process (Bosch 공정에서 Si 식각속도와 식각프로파일에 대한 Ar 첨가의 영향)

  • Ji, Jung Min;Cho, Sung-Woon;Kim, Chang-Koo
    • Korean Chemical Engineering Research
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    • v.51 no.6
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    • pp.755-759
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    • 2013
  • The etch rate and etch profile of Si was investigated when Ar was added to an $SF_6$ plasma in the etch step of the Bosch process. A Si substrate was etched with the Bosch process using $SF_6$ and $SF_6$/Ar plasmas, respectively, in the etch step to analyze the effects of Ar addition on the etch characteristics of Si. When the Ar flow rate in the $SF_6$ plasma was increased, the etch rate of the Si substrate increased, had a maximum at 20% of the Ar flow rate, and then decreased. This was because the addition of Ar to the $SF_6$ plasma in the etch step of the Bosch process resulted in the bombardment of Ar ions on the Si substrate. This enhanced the chemical reactions (thus etch rates) between F radicals and Si as well as led to sputtering of Si particles. Consequently, the etch rate was higher more than 10% and the etch profile was more anisotropic when the Si substrate was etched with the Bosch process using a $SF_6$/Ar (20% of Ar flow rate) plasma during the etch step. This work revealed a feasibility to improve the etch rate and anisotropic etch profile of Si performed with the Bosch process.

The Dry Etching Properties of ZnO Thin Film in Cl2/BCl3/Ar Plasma

  • Woo, Jong-Chang;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.3
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    • pp.116-119
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    • 2010
  • The etching characteristics of zinc oxide (ZnO) were investigated, including the etch rate and the selectivity of ZnO in a $Cl_2/BCl_3$/Ar plasma. It was found that the ZnO etch rate, the RF power, and the gas pressure showed non-monotonic behaviors with an increasing Cl2 fraction in the $Cl_2/BCl_3$/Ar plasma, a gas mixture of $Cl_2$(3 sccm)/$BCl_3$(16 sccm)/Ar (4 sccm) resulted in a maximum ZnO etch rate of 53 nm/min and a maximum etch selectivity of 0.89 for ZnO/$SiO_2$. We used atomic force microscopy to determine the roughness of the surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas. Due to the relatively low volatility of the by-products formed during etching with $Cl_2/BCl_3$/Ar plasma, ion bombardment and physical sputtering were required to obtain the high ZnO etch rate. The chemical states of the etched surfaces were investigated using X-ray photoelectron spectroscopy (XPS). This data suggested that the ZnO etch mechanism was due to ion enhanced chemical etching.

A Study on Deep Etching technology for MEMS process (MEMS 가공을 위한 실리콘 Deep Etching 기술 연구)

  • 김진현;이종권;류근걸;이윤배;이미영;김우혁
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.5 no.2
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    • pp.128-131
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    • 2004
  • In this study Bosch etching process repeating etch and deposition by STS-ICP ASEHR was evaluated. Fundamentally etch depth changes were affected by thickness of deposited PR, $SiO_2$ and depth, and pattern size on the substrate. However etch rates were observed to be changed by variable parameters such as platen power, coil power, and process pressure. Etch rate showed $1.2\mu{m}/min$ and sidewall profile showed $90\pm0.2^\circ$ with platen power 12W, coil power 500W, and etch/passivation cycle 6/7sec. It was confirmed that this result was very typical to Bosch process utilizing ICP.

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Improvement of Etch Rate and Profile by SF6, C4F8, O2 Gas Modulation (SF6, C4F8, O2 가스 변화에 따른 실리콘 식각율과 식각 형태 개선)

  • Kwon, Soon-Il;Yang, Kea-Joon;Song, Woo-Chang;Lim, Dong-Gun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.4
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    • pp.305-310
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    • 2008
  • Deep trench etching of silicon was investigated as a function of RF source power, DC bias voltage, $C_4F_8$ gas flow rate, and $O_2$ gas addition. On increasing the RF source power from 300 W to 700 W, the etch rate was increased from $3.52{\mu}m/min$ to $7.07{\mu}m/min$. The addition of $O_2$ gas improved the etch rate and the selectivity. The highest etch rate is achieved at the $O_2$ gas addition of 12 %, The selectivity to PR was 65.75 with $O_2$ gas addition of 24 %. At DC bias voltage of -40 V and $C_4F_8$ gas flow rate of 30 seem, We were able to achieve etch rate as high as $5.25{\mu}m/min$ with good etch profile.

Dry Etching Characteristics of BLT Thin Film (BLT 박막의 건식 식각 특성에 관한 연구)

  • Kim, Dong-Pyo;Kim, Chang-Il
    • Proceedings of the KIEE Conference
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    • pp.309-311
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    • 2003
  • The effects of etch parameters on dry etching of BLT thin films were investigated with ICP etch system in $Cl_2$/Ar and $BCl_2/Cl_2$/Ar gas. The etch rate and etch selectivity of BLT films were examined as a function of gas concentration, ICP power, bias power, and pressure. The maximum etch rates of 191.1 nm/min was obtained at the mixed etch condition of $BCl_3(20%)/Cl_2$/Ar, 700 W ICP RF power, 12 mTorr pressure and 400 W substrate RF power. As ICP power and rf power increased, the etch rate of BLT increased. As pressure increased, the etch rate of BLT decreased. The changes of radicals in both $Cl_2$/Ar and $BCl_3/Cl_2$/Ar plasma were measured with using optical emission spectroscopy (OES).

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Dry Etching of Polysilicon in Hbr/O2 Inductively Coupled Plasmas (Hbr/O2 유도결합 플라즈마를 이용한 폴리실리콘 건식식각)

  • 범성진;송오성;이혜영;김종준
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.1
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    • pp.1-6
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    • 2004
  • Dry etch characteristics of polysilicon with HBr/O$_2$ inductively coupled plasma (ICP) have been investigated. We determined etch late, uniformity, etch profiles, and selectivity with analyzing the cross-sectional scanning electron microscopy images obtained from top, center, bottom, right, and left positions. The etch rate of polysilicon was about 2500 $\AA$/min, which meets with the mass production for devices. The wafer level etch uniformity was within $\pm$5 %. Etch profile showed 90$^{\circ}$ slopes without notches. The selectivity over photoresist was between 2:1∼4.5:1, depending on $O_2$ flow rate. The HBr-ICP etching showed higher PR selectivity, and sharper profile than the conventional Cl$_2$-RIE.

Oxide etching characteristics of Enhanced Inductively Coupled Plasma (E-ICP에 의한 산화막 식각특성)

  • 조수범;송호영;박세근;오범환
    • Proceedings of the IEEK Conference
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    • pp.298-301
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    • 2000
  • We investigated the etch rate of SiO$_2$ in E-ICP, ICP system and the addition gas (O$_2$H$_2$) effect on SiO$_2$ etch characteristics. In all conditions, E-ICP shows higher etch rate than ICP. Small amount of O$_2$ addition increase F atom and O$\^$*/ concentration. at optimized condition (30% O$_2$ in CF$_4$, 70Hz) E-ICP system shows highest etch rate (about 6000${\AA}$). H$_2$addition in CF$_4$ Plasma make abrupt decrease Si etch rate and moderate decrease SiO$_2$ etch rate.

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