• Title, Summary, Keyword: Electron Beam

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Chemical and Thermal Characterizations of Electron Beam Irradiated Jute Fibers (전자빔 조사된 황마섬유의 화학적 및 열적 특성분석)

  • Ji, Sang Gyu;Cho, Donghwan;Lee, Byung Cheol
    • Journal of Adhesion and Interface
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    • v.11 no.4
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    • pp.162-167
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    • 2010
  • In the present work, the effect of electron beam irradiation on the chemical and thermal characteristics of cellulose-based jute fibers was explored by means of chemical analysis, electron spin resonance analysis, ATR-FTIR spectroscopy, thermogravimetric analysis and thermomechanical analysis. Jute fiber bundles were uniformly irradiated in the range of 2~100 kGy by a continuous method using a conveyor cartin an electron beam tunnel. Electron beam treatment, which is a physical approach to change the surfaces, more or less changed the chemical composition of jute fibers. It was also found that the radicals on the jute fibers can be increasingly formed with increasing electron beam intensity. However, the electron beam irradiation did not change significantly the chemical functional groups existing on the jute fiber surfaces. The electron beam irradiation influenced the thermal stability and thermal shrinkage/expansion behavior and the behavior depended on the electron beam intensity.

Realization for Each Element for capturing image in Scanning Electron Microscopy (주사 전자 현미경에서 영상 획득에 필요한 구성 요소 구현)

  • Lim, Sun-Jong;Lee, Chan-Hong
    • Journal of Korean Society of Laser Processing
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    • v.12 no.2
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    • pp.26-30
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    • 2009
  • Scanning Electron Microscopy (SEM) includes high voltage generator, electron gun, column, secondary electron detector, scan coil system and image grabber. Column includes electron lenses (condenser lens and objective lens). Condenser lens generates fringe field, makes focal length and control spot size. Focal length represents property of lens. Objective lens control focus. Most of the electrons emitted from the filament, are captured by the anode. The portion of the electron current that leaves the gun through the hole in the anode is called the beam current. Electron beam probe is called the focused beam on the specimen. Because of the lens and aperture, the probe current becomes smaller than the beam current. It generate various signals(backscattered electron, secondary electron) in an interaction with the specimen atoms. In this paper, we describe the result of research to develop the core elements for low-resolution SEM.

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Design Study of an Echo-Enabled Harmonic Generation Free Electron Laser for the 24th Harmonics

  • Kim, Eun-San
    • Journal of the Korean Physical Society
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    • v.70 no.1
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    • pp.53-58
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    • 2017
  • In this paper, we present an echo-enabled harmonic generation (EEHG) scheme to generate a free electron laser (FEL). The EEHG FEL utilizes two modulators and two chicanes that can generate a high harmonic density modulation with a low initial beam energy modulation. Using the beam parameters of a 150-MeV electron accelerator, we show that the EEHG scheme enhances FEL performance and generates coherent radiation with a wavelength of 100 nm. In this scheme, the 150-MeV electron beam is energy-modulated by using two lasers with wavelengths of 800 and 2400 nm. The modulated electron beam is sent to two chicanes whose dispersive strengths are 8.2 and 1.0 mm to convert energy modulation to density modulation. Finally, the density-modulated electron beam is sent to a radiator that is tuned to a wavelength of 100 nm and generates radiation with a peak power of 0.3 GW. We performed simulations of the laser-beam interaction by using the GENESIS code and showed that intense coherent radiation with a wavelength of 100 nm could be achieved from the two seeding lasers under the designed EEHG scheme.

The Effect of Electron Beam Irradiation on Physicochemical Properties of Hansan Ramie (전자빔 조사된 한산모시의 물리화학적 특성변화)

  • Choi, Hae-Young;Lee, Jung-Soon
    • Textile Science and Engineering
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    • v.47 no.4
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    • pp.253-260
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    • 2010
  • Hansan ramie fibers were irradiated with an electron beam to improve the interfacial bonding in the manufacture of composites. The effect of electron beam irradiation was examined by SEM, chemical component analysis and the mechanical properties. The impurities on the surface of ramie and lignin were removed by electron beam irradiation, which increased the tensile strength of the ramie fibers. However, the excessive electron beam energy caused the degradation of ramie fibers, due probably to the reduced ${\alpha}$-cellulose. The reduction of ${\alpha}$-cellulose indicates the degradation of the cellulose chain, which usually leads to a decrease in fiber strength.

Design and Performance Test of Vacuum Control Valve for Electron Beam Lithography (전자빔 가공기의 진공제어 밸브설계 및 특성평가)

  • Lee Chan-Hong;Lee Hu-Sang
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • pp.777-780
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    • 2005
  • The high vacuum in a electron beam lithography is basic condition, because electron beam vanish by collision with air molecules in generally atmosphere. To make high vacuum state, the vacuum control valve is essential. Most vacuum control valve are manual units. So, user of manual vacuum valve must have understanding vacuum process to change from low vacuum to high vacuum state. The user of electron beam lithography are troubled with operation of manual vacuum valve, in case the vacuum chamber is frequently open. In this paper, the design and performance test of auto vacuum control valve for electron beam lithography are described. With the auto vacuum control valve, the high vacuum level can reach 2.8E-5 Torr.

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Degardatrion of Cellulosic Fibers by Electron Beam Irradiation

  • Han, Sung-Ok;Seo, Yung-Bum;Lee, Chun-Han
    • Journal of Korea Technical Association of The Pulp and Paper Industry
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    • v.39 no.5
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    • pp.20-25
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    • 2007
  • Henequen fibers were treated by electron beam irradiation and by NaOH to make surface modification for better bonding in the manufacture of biocomposite. Impurity removal and carbonyl group formation were noticed in the previous study by electron beam irradiation, but extensive cellulose degradation were also noticed. To evaluate the effects of electron beam irradiation on cellulosic fibers further, henequen fibers, cotton pulp, cotton fibers, and cellophane were irradiated by electron beam, and their changes of cellulose viscosity, chemical composition, and tensile strength were measured and analyzed.

Electron Emission Mechanism in the Surface Conduction Electron Emitter Displays

  • Cho, Guang-Sup;Choi, Eun-Ha;Kim, Young-Guon;Kim, Dai-Il
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.139-140
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    • 2000
  • The origin of the display current in the surface conduction electron emitter displays has been verified in the calculation of the electron trajectory. Some electrons move directly toward the display surface as an anode current which is generated due to the inertial force of electron motion along the curved electric field lines with a small curvature near the fissure area..

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A Study on Pattern Fabrication using Proximity Effect Correction in E-Beam Lithography (전자빔 리소그래피에서의 근접효과 보정을 이용한 패턴 제작에 관한 연구)

  • Oh, Se-Kyu;Kim, Dong-Hwan;Kim, Seung-Jae
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.2
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    • pp.1-10
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    • 2009
  • This study describes the electron beam lithography pattern fabrication using the proximity effect correction. When electron beam exposes into electron beam resist, the beam tends to spread inside the substance (forward scattering). And the electron beam reflected from substrate spreads again (back scattering). These two effects influence to distribution of the energy and give rise to a proximity effect while a small pattern is generated. In this article, an electron energy distribution is modeled using Gaussian shaped beam distribution and those parameters in the model are computed to solidify the model. The proximity effect is analyzed through simulations and appropriate corrections to reducing the proximity effect are suggested. It is found that the proximate effect can be reduced by adopting schemes of dose adjustment, and the optimal dose is determined through simulations. The proposed corrected proximity effect correction is proved by experiments.

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Design of a miniature electron beam irradiation apparatus for domain refining grain oriented electrical steel with electron beams (전자빔 조사에 의한 방향성 전기강판의 철손 감소를 위한 소형 전자빔 조사장치 설계)

  • 조경재
    • Proceedings of the KIPE Conference
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    • pp.18-21
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    • 2000
  • A nonconstact technique for reducing the core loss of a grain oriented silicon steel has been developed by the use of mechanical scribing Q-switched laser plasma jet or electron beam irradiation. Among these methods electron beam irradiation has advantages of domain refining without any deformation or damage of insulating film on the surface of a grain criented Si-Fe. Over the past years this processing was performed in vaccum of 10-4 Torr or below causing the problem of high cost and difficulty of continuous works. In this paper a miniature electron permeable window through which electron beam energy 4-80keV and average current 0.1-2mA. were obtained for electron beam irradiating on air was designed and manufactured.

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Modeling and Simulation of Electron-beam Lithography Process for Nano-pattern Designs using ZEP520 Photoresist (ZEP520 포토리지스트를 이용한 나노 패턴 형성을 위한 전자빔 리소그래피 공정 모델링 및 시뮬레이션)

  • Son, Myung-Sik
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.3
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    • pp.25-33
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    • 2007
  • A computationally efficient and accurate Monte Carlo (MC) simulator of electron beam lithography process, which is named SCNU-EBL, has been developed for semiconductor nanometer pattern design and fabrication. The simulator is composed of a MC simulation model of electron trajectory into solid targets, an Gaussian-beam exposure simulation model, and a development simulation model of photoresist using a string model. Especially for the trajectories of incident electrons into the solid targets, the inner-shell electron scattering of an target atom and its discrete energy loss with an incident electron is efficiently modeled for multi-layer resists and heterogeneous multi-layer targets. The simulator was newly applied to the development profile simulation of ZEP520 positive photoresist for NGL(Next-Generation Lithography). The simulation of ZEP520 for electron-beam nanolithography gave a reasonable agreement with the SEM experiments of ZEP520 photoresist.

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