• Title, Summary, Keyword: E-ICP

Search Result 174, Processing Time 0.034 seconds

The Silylation Photo Resist Process and the Enhanced-Inductively Coupled Plasma (E-ICP) (Silylation Photo resist 공정과 Enhanced-Inductively Coupled Plasma (E-ICP))

  • 정재성;박세근;오범환
    • Proceedings of the IEEK Conference
    • /
    • /
    • pp.922-925
    • /
    • 1999
  • The Silylation photo-resist etch process was tested by Enhanced-ICP dry etcher. The comparison of the two process results of micro pattern etching with 0.25${\mu}{\textrm}{m}$ CD by E-ICP and ICP reveals that E-ICP has better quality than ICP The etch rate and the microloading effect was improved in E-ICP Especially, the problem of the lateral etch was improved in E-ICP.

  • PDF

The Development of Silylated Photoresist Etch Process by Enhanced- Inductively Coupled Plasma (Enhanced-Inductively Coupled Plasma (E-ICP)를 이용한 Silylated photoresist 식각공정개발)

  • 조수범;김진우;정재성;오범환;박세근;이종근
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.15 no.3
    • /
    • pp.227-232
    • /
    • 2002
  • The silylated photoresist etch process was tested by enhanced-ICP. The comparison of the two process results of micro pattern etching with $0.35\mu\textrm{m}$ CD by E-ICP and ICP reveals that I-ICP has bettor quality than ICP. The etch rate and the RIE lag effect was improved in E-ICP. Especially, the problem of the lateral etch was improved in E-ICP.

Improvement of SiO$_2$Etching Characteristics by E-ICP (SiO$_2$식각 특성 개선을 위한 E-ICP와 ICP 식각 비교)

  • 정재성;김진우;라상호;오범환;박세근
    • Proceedings of the IEEK Conference
    • /
    • /
    • pp.887-890
    • /
    • 1999
  • The etch characteristics of E-ICP and ICP are compared for the improvement of SiO$_2$ etch Process. Etch rate and etch pattern profile are measured by $\alpha$ -step surface profiler and SEM, respectively. The E-ICP provides improved characteristics on etch rate and surface profile in comparison to ICP process.

  • PDF

Comparison of E-ICP Effect for Large Area Plasma Source (대면적 플라즈마 소스에의 E-ICP 적용과 그 효과 비교)

  • 김진우;손민영;박세근;오범환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • /
    • pp.608-611
    • /
    • 2000
  • Large area plasma source becomes important as the substrate size increases. In this work, four inductively coupled plasma(ICP) unit sources are distributed 2${\times}$2 array. E-ICP concept is applied to the 2${\times}$2 array ICP and its effect is examined. Characteristics of the plasma are measured, and photoresist etching is performed with oxygen plasma. Good etching characteristic in terms of etching rate and uniformity can be obtained with E-ICP.

  • PDF

Oxide etching characteristics and Etched Profiles by the Enhanced Inductive Coupled Plasma (산화막 식각에 적용된 E-ICP효과와 형상단면비교)

  • 조수범;송호영;박세근;오범환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • /
    • pp.612-615
    • /
    • 2000
  • The etch rate of $SiO_2$ in Enhanced - Inductive Coupled Plasma (E-ICP) and CW-ICP systems are investigated. As addition of $O_2$ to $CF_4$ gas increases oxide etch rate, E-ICP etching shows the highest etch rate (about 6000A) at an optimized condition with 30% $O_2$ in $CF_4$ 70Hz at the modulation frequency of 70Hz. E-ICP also shows better etch profile than CW-ICP.

  • PDF

Oxide etching characteristics of Enhanced Inductively Coupled Plasma (E-ICP에 의한 산화막 식각특성)

  • 조수범;송호영;박세근;오범환
    • Proceedings of the IEEK Conference
    • /
    • /
    • pp.298-301
    • /
    • 2000
  • We investigated the etch rate of SiO$_2$ in E-ICP, ICP system and the addition gas (O$_2$H$_2$) effect on SiO$_2$ etch characteristics. In all conditions, E-ICP shows higher etch rate than ICP. Small amount of O$_2$ addition increase F atom and O$\^$*/ concentration. at optimized condition (30% O$_2$ in CF$_4$, 70Hz) E-ICP system shows highest etch rate (about 6000${\AA}$). H$_2$addition in CF$_4$ Plasma make abrupt decrease Si etch rate and moderate decrease SiO$_2$ etch rate.

  • PDF

Charge Pumping Method를 이용한 N-type MOSFET의 Interface Trap(Dit) 분석

  • Go, Seon-Uk;Kim, Sang-Seop;Choe, Byeong-Deok
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • /
    • pp.328.1-328.1
    • /
    • 2014
  • MOSFET degradation의 대부분은 hot-carrier injection에 의한 interface state (Dit)의 생성에서 비롯되며 따라서 본 연구에서는 신뢰성에 대한 한 가지 방법으로 Charge pumping method를 이용하여 MOSFET의 interface trap(Dit)의 변화를 측정하였다. 소스와 드레인을 ground로 묶고 게이트에 펄스를 인가한 후 Icp를 측정하여 Dit를 추출하였다. 온도를 293~343 K까지 5 K씩 가변했을 때 293K의 Icp(${\mu}A$)는 0.12 nA 313 K는 0.112 nA 343 K는 0.926 nA이며 Dit (cm-1/eV-1)는 $1.61{\times}10^{12}$ (Cm-2/eV-1) $1.49{\times}10^{12}$ (Cm-2/eV-1) $1.23{\times}10^{12}$ (Cm-2/eV-1)이다. 측정결과 Dit는 Icp가 높은 지점에서 추출되며 온도가 높아지게 되면 Icp전류가 낮아지고 Dit가 줄어드는 것을 볼 수 있다. 온도가 올라가게 되면 carrier들이 trap 준위에서 conduction band 위쪽에 이동하게 되어서 interface에 trap되는 양이 작아지게 된다. 그래서 이때 Icp를 이용해 추출한 Dit 는 실제로 trap의 양이 줄어든 것이 아니라 Thermal excess 현상으로 인해 측정되는 Icp의 양이 줄어든 것으로 분석할 수 있다.

  • PDF

Periodic Variation of Magnetized Plasma for E-ICP (자화 플라즈마의 주기적 특성 변화와 E-ICP)

  • 라상호;박세근;오범환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • /
    • pp.616-619
    • /
    • 2000
  • It is important to control the plasma characteristics for high quality plasma process. Recently, a novel method proposed by us, named as Enhanced-ICP, using periodic weak time-varying axial magnetic field added to a normal ICP source, has improved etch characteristics much. Variation of plasma characteristics according to the frequency of time-varying axial magnetic field have been measured and analyzed.

  • PDF

Plasma characterization of a mesh separated dual plasma source by L-probe and QMS

  • Kim, Dong-Hun;Choe, Ji-Seong;Kim, Seong-Bong;Park, Sang-Jong;Ju, Jeong-Hun
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • /
    • pp.156.2-156.2
    • /
    • 2015
  • 반도체 소자의 크기가 나노사이즈로 줄어들기 때문에, 건식식각의 중요성이 강조되고 있다. dual plasma source를 사용함으로써 plasma 밀도, 이온충돌에너지, 이온플럭스를 조절 가능하다. Low frequency로 이온에너지를 조절하고, high frequency로 이온플럭스를 일반적으로 조절한다. 본 연구는 inductively coupled plasma (ICP)와 capacitively coupled plasma (CCP)를 사용하는 dual plasma source이다. ICP는 AE RPS로 2.4 MHz를 사용하고, CCP는 AE RFX-600으로 13.56 MHz이다. single L-probe는 Hiden ESPion이고, quadrupole mass spectrometer (QMS)는 INFICON CPM-300이다. chuck에 CCP가 인가되고, ICP는 SUS mesh를 거쳐서 영향을 미친다. Gas는 Ar, Ar+CF4 두 조건에서 비료를 하였다. Single L-probe를 이용하여 플라즈마를 측정한 결과 CCP만 인가하였을 때, Te 2.05 eV, Ne 4.07E+10 #/cm3, Ni 5.82E+10 #/cm3의 결과를 얻을 수 있었다. ICP를 방전하고 mesh를 통해서 chuck으로 입사하는 이온을 측정한 결과 mesh에 의해 이온이 중성화되어 거의 입사하지 않음을 확인할 수 있었다. 최종적으로 이온의 영향이 상쇄되고, 라디칼의 영향이 증가하여 높은 etch rate와 선택비를 가지며, 등방성 식각의 영향이 커질 것으로 사료된다.

  • PDF

Effect of NaBH4 and HCl on signal intensity of As, Se, Ge with on-line hydride generation system and E-O-V ICP-AES (수소화물 발생장치와 유도 결합 플라스마 원자화 방출 분광법 이용 시 비소와 셀레늄 및 게르마늄의 신호세기에 대한 NaBH4와 HCl의 영향)

  • Nam, Sang-Ho;Han, Soung-Sim
    • Analytical Science and Technology
    • /
    • v.15 no.5
    • /
    • pp.439-444
    • /
    • 2002
  • DE-O-V ICP-AES has been studied for the analytical characteristics of As, Se, and Ge with PN, USN and HG. Effect of $NaBH_4$ and HCl on the signal intensity of As, Se and Ge with HG and E-O-V ICP-AES were closely investigated. The sensitivities of As, Se and Ge with HG were much greater than those with PN and USN. Accordingly, the detection limits of the elements with HG were lower by a factor of 100 and 10 than PN and USN, respectively.