• Title, Summary, Keyword: Dual Structure

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The dual emitter structure for field emission light source (전계방출광원용 듀얼 에미터 특성 연구)

  • Kim, Kwang-Bok;Lee, Sun-Hee;Park, Ho-Seop;Yang, Dong-Wook;Kim, Dae-Jun
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • pp.151-154
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    • 2008
  • The field emission lamps have the advantages to their cold cathode-characteristic and the eco-friendly, We realized that the dual emitter system showed very simple structure which gate and cathode electrodes are formed on the same glass surface. In this paper, we reported the properties of dual emitters depended on variation of gate width and spacing for optimum panel structure. In combination of dual emitter structure and bi-polar driving, electron beam spreads more than normal gate structure or diode structure, and emission uniformity increased in dual emitter structure at 5"-diagonal.

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Desing of Dual-band VCO Using PBG Structure (PBG 구조를 이용한 Dual-band VCO 설계)

  • 조용기;서철헌
    • Proceedings of the IEEK Conference
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    • pp.64-67
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    • 2003
  • This paper presents the design of dual-band VCO using PBG structure for IEEE 802.11A/B. By adding switch circuit to the single-band VCO, we could achieve a dual-band VCO. The center frequencies of dual-band VCO are 5.93GHz(-13dBm) and 2.37GHz (3.50dBm). The phase noise is improved about l0dB by using PBG Structure.

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Comparison of Hole Mobility Characteristics of Single Channel and Dual Channel Si/SiGe Structure (단일채널 Strained Si/SiGe 구조와 이중채널 Strained Si/SiGe 구조의 이동도 특성 비교)

  • Jung, Jong-Wan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.113-114
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    • 2007
  • Hole mobility characteristics of single surface channel and dual channel Si/SiGe structure are compared, where the former one consists of a relaxed SiGe buffer layer and a tensile strained Si layer on top, and for dual channel structure a compressively strained SiGe layer is inserted between them. Due to the difference of hole mobility enhancement factors of layers between them, hole mobility characteristics with respect to the Si cap thickness shows the opposite tend. Hole mobility increases with thicker Si cap for single channel structure, whereas it decreases with thicker Si cap for dual channel structure.

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The Electrical Properties of Single-silicon TFT Structure with Symmetric Dual-Gate for kink effect suppression

  • Lee, Deok-Jin;Kang, Ey-Goo
    • Journal of the Korea Computer Industry Society
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    • v.6 no.5
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    • pp.783-790
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    • 2005
  • In this paper, we have simulated a Symmetric Dual-gate Single-Si TFT which has three split floating n+ zones. This structure reduces the kink-effect drastically and improves the on-current. Due to the separated floating n+ zones, the transistor channel region is split into four zones with different lengths defined by a floating n+ region, This structure allows an effective reduction of the kink-effect depending on the length of two sub-channels. The on-current of the proposed dual-gate structure is 0.9mA while that of the conventional dual-gate structure is 0.5mA at a 12V drain voltage and a 7V gate voltage. This result shows a 80% enhancement in on-current. Moreover we observed the reduction of electric field in the channel region compared to conventional single-gate TFT and the reduction of the output conductance in the saturation region. In addition, we also confirmed the reduction of hole concentration in the channel region so that the kink-effect reduces effectively.

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Electromigration Characteristics Stduy DCV Interconnect Structures in Cu Dual-Damascene Process (Cu Dual Damascene 배선 공정에서의 DCV 배선구조의 EM 특성 연구)

  • Lee, Hyun-Ki;Choi, Min-Ho;Kim, Nam-Hoon;Kim, Sang-Yong;Chang, Eui-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.123-124
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    • 2005
  • We investigated the effect of a Ta/TaN Cu diffusion barrier existence on the reliability and the electrical performance of Cu dual-damascene interconnects. A high EM performance in Cu dual-damascene structure was observed the BCV(barrier contact via) interconnect structure to remain Ta/TaN barrier layer. Via resistance was decreased DCV interconnect structure by bottomless process. This structure considers that DCV interconnect structure has lower activation energy and higher current density than BCV interconnect structure. The EM failures by BCV via structure were formed at via hole, but DCV via structure was formed EM fail at the D2 line. In order to improve the EM characteristic of DCV interconnect structure by bottomless process, after Ta/TaN diffusion barrier layer in via bottom is removed by Ar+ resputtering process, it is desirable that Ta thickness is thickly made by Ta flash process.

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A study on the control system with dual structure to enhance its reliability (제어 시스템의 신뢰도 향상을 위한 이중화 구조 연구)

  • 박세화;문봉채;김병국;변증남
    • 제어로봇시스템학회:학술대회논문집
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    • pp.773-778
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    • 1990
  • In this paper, a reliable control system structured with dual CPU modules and dual I/O modules is implemented as a means of achieving a highly reliable fault tolerant control system. For this, faults in the system modules are first examined, and a fault detection technique consisting of self diagnostic, comparison process, and exception processing is applied. Also reliability analysis is conducted for the discrete time Markov model with dual structure. It is shown quantitatively that the reliability is improved in the control system with dual structure in comparison with a system with single module structure.

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New Configuration of a PLDRO with an Interconnected Dual PLL Structure for K-Band Application

  • Jeon, Yuseok;Bang, Sungil
    • Journal of electromagnetic engineering and science
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    • v.17 no.3
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    • pp.138-146
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    • 2017
  • A phase-locked dielectric resonator oscillator (PLDRO) is an essential component of millimeter-wave communication, in which phase noise is critical for satisfactory performance. The general structure of a PLDRO typically includes a dual loop of digital phase-locked loop (PLL) and analog PLL. A dual-loop PLDRO structure is generally used. The digital PLL generates an internal voltage controlled crystal oscillator (VCXO) frequency locked to an external reference frequency, and the analog PLL loop generates a DRO frequency locked to an internal VCXO frequency. A dual loop is used to ease the phase-locked frequency by using an internal VCXO. However, some of the output frequencies in each PLL structure worsen the phase noise because of the N divider ratio increase in the digital phase-locked loop integrated circuit. This study examines the design aspects of an interconnected PLL structure. In the proposed structure, the voltage tuning; which uses a varactor diode for the phase tracking of VCXO to match with the external reference) port of the VCXO in the digital PLL is controlled by one output port of the frequency divider in the analog PLL. We compare the proposed scheme with a typical PLDRO in terms of phase noise to show that the proposed structure has no performance degradation.

Fabrication of Hydroxyapatite Ceramics to Mimic the Natural Bone Structure

  • Moon, Dae-Hee;Ryu, Su-Chak
    • Journal of the Korean Ceramic Society
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    • v.48 no.5
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    • pp.390-395
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    • 2011
  • The objective of our study was to produce an imitation bone material consisting of hydroxyapatite with a compact and spongy structure. This study shows the ideal content of $SiO_2$ and the sintering temperature to produce imitation bone that has the mechanical properties of natural bone. On the basis of our determination of the ideal conditions, a compact part was produced and its mechanical properties were tested. A compact part made of 0.5 wt% $SiO_2$ and sintered at $1350^{\circ}C$ showed excellent mechanical properties. The bioactivity of the compact part under this condition was tested, and it was found to be bioactive. The porous part was produced by controlling the powder size, and the dual structure was manufactured by combining the compact and porous parts. A water permeability test confirmed that the dual structure had an interconnected pore structure. Therefore, this dual-body structure is feasible for use in the creation of implants.

Design of Dual Curved Lens for Millimeter-Wave Imaging (밀리미터파 이미징을 위한 이중 곡률 렌즈의 설계)

  • Lee, Won-Hui;Pyo, Seongmin
    • The Journal of The Institute of Internet, Broadcasting and Communication
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    • v.16 no.6
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    • pp.239-242
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    • 2016
  • In this paper, we proposed the dual curved lens of concave type. HDPE (High Density Polyethylene) used to fabricate the dual curved lens. The dual curved lens consisted of two concave structures. Role of two concave structures is to beam uniform and expansion. A small concave structure has the greater curvature than big concave structure. The dual curved lens will apply to millimeter imaging system. We measured the dual curved lens performance using 250 GHz VDI source. And we simulated the dual curved lens using ZEMAX. Fabricated lens have a good performance for beam uniform and expansion.