• Title, Summary, Keyword: DIBL

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Drain Induced Barrier Lowering of Asymmetric Double Gate MOSFET for Channel Doping Profile (비대칭 DGMOSFET의 도핑분포함수에 따른 DIBL)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.19 no.11
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    • pp.2643-2648
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    • 2015
  • This paper analyzes the phenomenon of drain induced barrier lowering(DIBL) for doping profiles in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to the change of doping profile to influence on potential distribution. As a results, the DIBL is significantly influenced by projected range and standard projected deviation, the variables of channel doping profiles. The change of DIBL shows greatly in the range of high doping concentration such as $10^{18}/cm^3$. The DIBL increases with decrease of channel length and increase of channel thickness, and with increase of bottom gate voltage and top/bottom gate oxide film thickness.

Analysis of DIBL Characteristics for Double Gate MOSFET Using Series (급수를 이용한 DGMOSFET의 DIBL 특성 분석)

  • Han, Ji-Hyung;Jung, Hak-Kee;Jeong, Dong-Soo;Lee, Jong-In;Kwon, Oh-Shin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • pp.709-711
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    • 2011
  • 본 연구에서는 Double-gate MOSFET의 DIBL(Drain Induced Barrier Lowering)의 특성을 분석하기 위하여 분석학적 전송모델을 사용하였으며 분석학적 모델을 유도하기 위하여 포아송방정식을 풀 때 급수함수를 이용하였다. 단채널 효과에서는 유효채널길이 감소와 문턱전압 감소 그리고 DIBL이 있다. DIBL은 드레인 전압 변화에 따른 문턱전압의 변화로 알 수 있다. 채널길이가 감소하면 DIBL은 감소하지만, 채널길이가 감소하면 단채널 효과가 증가한다. 본 논문에서는 채널길이에 따른 DIBL을 분석하였고, 또한 채널 두께 및 게이트 산화막의 두께에 대한 DIBL에 대하여 분석하였다.

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Analysis of Drain Induced Barrier Lowering of Asymmetric Double Gate MOSFET for Channel Doping Profile (비대칭 DGMOSFET의 채널도핑분포함수에 따른 드레인 유도 장벽 감소현상 분석)

  • Jung, Hakkee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • pp.863-865
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    • 2015
  • 본 연구에서는 비대칭 이중게이트 MOSFET의 채널 내 도핑농도분포에 대한 드레인유도장벽감소(Drain Induced Barrier Lowering; DIBL)에 대하여 분석하고자한다. DIBL은 드레인 전압에 의하여 소스 측 전위장벽이 낮아지는 효과로서 중요한 단채널 효과이다. 이를 분석하기 위하여 포아송방정식을 이용하여 해석학적 전위분포를 구하였으며 전위분포에 영향을 미치는 채널도핑농도의 분포함수변화에 대하여 DIBL을 관찰하였다. 채널길이, 채널두께, 상하단 게이트 산화막 두께, 하단 게이트 전압 등을 파라미터로 하여 DIBL을 관찰하였다. 결과적으로 DIBL은 채널도핑농도분포함수의 변수인 이온주입범위 및 분포편차에 변화를 나타냈다. 특히 두 변수에 대한 DIBL의 변화는 최대채널도핑농도가 $10^{18}/cm^3$ 정도로 고도핑 되었을 경우 더욱 현저히 나타나고 있었다. 채널길이가 감소할수록 그리고 채널두께가 증가할수록 DIBL은 증가하였으며 하단 게이트 전압과 상하단 게이트 산화막 두께가 증가할수록 DIBL은 증가하였다.

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Dependence of Drain Induced Barrier Lowering for Doping Profile of Channel in Double Gate MOSFET (이중게이트 MOSFET에서 채널내 도핑분포에 대한 드레인유기장벽감소 의존성)

  • Jung, Hak-Kee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.15 no.9
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    • pp.2000-2006
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    • 2011
  • In this paper, the drain induced barrier lowering(DIBL) for doping distribution in the channel has been analyzed for double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studing because of adventages to be able to reduce the short channel effects(SCEs) to occur in convensional MOSFET. DIBL is SCE known as reduction of threshold voltage due to variation of energy band by high drain voltage. This DIBL has been analyzed for structural parameter and variation of channel doping profile for DGMOSFET. For this object, The analytical model of Poisson equation has been derived from Gaussian doping distribution for DGMOSFET. To verify potential and DIBL models based on this analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and DIBL for DGMOSFET has been investigated using this models.

Dependence of Channel Doping Concentration on Drain Induced Barrier Lowering for Asymmetric Double Gate MOSFET (비대칭 이중게이트 MOSFET에 대한 DIBL의 채널도핑농도 의존성)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.20 no.4
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    • pp.805-810
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    • 2016
  • The dependence of drain induced barrier lowering(DIBL) is analyzed for doping concentration in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to top/bottom gate oxide thickness and bottom gate voltage as well as channel doping concentration. As a results, the DIBL is significantly influenced by channel doping concentration. DIBL is significantly increased by doping concentration if channel length becomes under 25 nm. The deviation of DIBL is increasing with increase of oxide thickness. Top and bottom gate oxide thicknesses have relation of an inverse proportion to sustain constant DIBL regardless channel doping concentration. We also know the deviation of DIBL for doping concentration is changed according to bottom gate voltage.

Analysis on DIBL of DGMOSFET for Device Parameters

  • Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • v.9 no.6
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    • pp.738-742
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    • 2011
  • This paper has studied drain induced barrier lowering(DIBL) for Double Gate MOSFET(DGMOSFET) using analytical potential model. Two dimensional analytical potential model has been presented for symmetrical DGMOSFETs with process parameters. DIBL is very important short channel effects(SCEs) for nano structures since drain voltage has influenced on source potential distribution due to reduction of channel length. DIBL has to be small with decrease of channel length, but it increases with decrease of channel length due to SCEs. This potential model is used to obtain the change of DIBL for DGMOSFET correlated to channel doping profiles. Also device parameters including channel length, channel thickness, gate oxide thickness and doping intensity have been used to analyze DIBL.

Analysis of Drain Induced Barrier Lowering for Double Gate MOSFET According to Channel Doping Intensity (채널도핑강도에 대한 DGMOSFET의 DIBL분석)

  • Jung, Hak-Kee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • pp.888-891
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    • 2011
  • In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET. The DIBL is very important short channel effects as phenomenon that barrier height becomes lower since drain voltage influences on potential barrier of source in short channel. The analytical potential distribution of Poisson equation, validated in previous papers, has been used to analyze DIBL. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. The change of DIBL has been investigated for device parameters such as channel thickness, oxide thickness and channel doping intensity.

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Analysis of Drain Induced Barrier Lowering for Double Gate MOSFET According to Channel Doping Concentration (채널도핑강도에 대한 이중게이트 MOSFET의 DIBL분석)

  • Jung, Hak-Kee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.3
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    • pp.579-584
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    • 2012
  • In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET. The DIBL is very important short channel effects as phenomenon that barrier height becomes lower since drain voltage influences on potential barrier of source in short channel. The analytical potential distribution of Poisson equation, validated in previous papers, has been used to analyze DIBL. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. The change of DIBL has been investigated for device parameters such as channel thickness, oxide thickness and channel doping concentration.

Relation of Oxide Thickness and DIBL for Asymmetric Double Gate MOSFET (비대칭 이중게이트 MOSFET에서 산화막 두께와 DIBL의 관계)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.20 no.4
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    • pp.799-804
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    • 2016
  • To analyze the phenomenon of drain induced barrier lowering(DIBL) for top and bottom gate oxide thickness of asymmetric double gate MOSFET, the deviation of threshold voltage is investigated for drain voltage to have an effect on barrier height. The asymmetric double gate MOSFET has the characteristic to be able to fabricate differently top and bottom gate oxide thickness. DIBL is, therefore, analyzed for the change of top and bottom gate oxide thickness in this study, using the analytical potential distribution derived from Poisson equation. As a results, DIBL is greatly influenced by top and bottom gate oxide thickness. DIBL is linearly decreased in case top and bottom gate oxide thickness become smaller. The relation of channel length and DIBL is nonlinear. Top gate oxide thickness more influenced on DIBL than bottom gate oxide thickness in the case of high doping concentration in channel.

Dependence of Drain Induced Barrier Lowering for Ratio of Channel Length vs. Thickness of Asymmetric Double Gate MOSFET (비대칭 DGMOSFET에서 채널길이와 두께 비에 따른 DIBL 의존성 분석)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.19 no.6
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    • pp.1399-1404
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    • 2015
  • This paper analyzed the phenomenon of drain induced barrier lowering(DIBL) for the ratio of channel length vs. thickness of asymmetric double gate(DG) MOSFET. DIBL, the important secondary effect, is occurred for short channel MOSFET in which drain voltage influences on potential barrier height of source, and significantly affects on transistor characteristics such as threshold voltage movement. The series potential distribution is derived from Poisson's equation to analyze DIBL, and threshold voltage is defined by top gate voltage of asymmetric DGMOSFET in case the off current is 10-7 A/m. Since asymmetric DGMOSFET has the advantage that channel length and channel thickness can significantly minimize, and short channel effects reduce, DIBL is investigated for the ratio of channel length vs. thickness in this study. As a results, DIBL is greatly influenced by the ratio of channel length vs. thickness. We also know DIBL is greatly changed for bottom gate voltage, top/bottom gate oxide thickness and channel doping concentration.