• Title, Summary, Keyword: Chemical mechanical polishing

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Study on Chemical Mechanical Polishing for Reduction of Micro-Scratch (화학기계적연마 공정에서 미소 스크래치 저발생화를 위한 가공기술 연구)

  • Kim, Seong-Jun;An, Yu-Min;Baek, Chang-Uk;Kim, Yong-Gwon
    • Journal of the Korean Society for Precision Engineering
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    • v.19 no.8
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    • pp.134-140
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    • 2002
  • Chemical mechanical polishing of aluminum and photoresist using colloidal silica-based slurry was experimented. The effects of slurry pH, silica concentration, and oxidizer ($H_2O_2$) concentration on surface roughness and removal rate were studied. The optimum slurry conditions for reduction of micro-scratch were investigated. The optimum chemical mechanical polishing with the colloidal silica-based slurry was compared with conventional chemical mechanical polishing with alumina-based slurry. Chemical mechanical polishing of the aluminum with the colloidal silica-based slurry showed improved result but chemical mechanical polishing of the photoresist did not. The improved result was comparative with that of chemical mechanical polishing with filtered alumina-based slurry which one of desirable methods to reduce the micro-scratch.

Study on Pad Properties as Polishing Result Affecting Factors in Chemical Mechanical Polishing (CMP공정에서 연마결과에 영향을 미치는 패드 물성치에 관한 연구)

  • 김형재;김호윤;정해도
    • Journal of the Korean Society for Precision Engineering
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    • v.17 no.3
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    • pp.184-191
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    • 2000
  • Properties of pad are investigated to find the relationship between the chemical mechanical polishing(CMP) results, such as material removal rate and within wafer non-uniformity(WIWNU), and its properties. Polishing pressure is considered as important factors to affect the results, so behavior of ordinary polymer is studied to define the polishing result affecting properties of pad. Experimental setup is devised to identify the behavior of pad and several different pads are used in chemical mechanical polishing experiments to verify the correlations between pad properties and polishing results. The results indicate that the viscoelastic properties of pad had relationships with the polishing results, and shows correlation between suggested properties of pad and polishing result.

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Atomic Scale Modeling of Chemical Mechanical Polishing Process (Chemical Mechanical Polishing 공정에 관한 원자단위 반응 모델링)

  • Byun, Ki-Ryang;Kang, Jeong-Won;Song, Ki-Oh;Hwang, Ho-Jung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.5
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    • pp.414-422
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    • 2005
  • This paper shows the results of atomistic modeling for the Interaction between spherical nano abrasive and substrate In chemical mechanical polishing processes. Atomistic modeling was achieved from 2-dimensional molecular dynamics simulations using the Lennard-jones 12-6 potentials. We proposed and investigated three mechanical models: (1) Constant Force Model; (2) Constant Depth Model, (3) Variable Force Model, and three chemical models, such as (1) Chemically Reactive Surface Model, (2) Chemically Passivating Surface Model, and (3) Chemically Passivating-reactive Surface Model. From the results obtained from classical molecular dynamics simulations for these models, we concluded that atomistic chemical mechanical polishing model based on both Variable Force Model and Chemically Passivating-reactive Surface Model were the most suitable for realistic simulation of chemical mechanical polishing in the atomic scale. The proposed model can be extended to investigate the 3-dimensional chemical mechanical polishing processes in the atomic scale.

Effect of Crystal Orientation on Material Removal Characteristics in Sapphire Chemical Mechanical Polishing (사파이어 화학기계적 연마에서 결정 방향이 재료제거 특성에 미치는 영향)

  • Lee, Sangjin;Lee, Sangjik;Kim, Hyoungjae;Park, Chuljin;Sohn, Keunyong
    • Tribology and Lubricants
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    • v.33 no.3
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    • pp.106-111
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    • 2017
  • Sapphire is an anisotropic material with excellent physical and chemical properties and is used as a substrate material in various fields such as LED (light emitting diode), power semiconductor, superconductor, sensor, and optical devices. Sapphire is processed into the final substrate through multi-wire saw, double-side lapping, heat treatment, diamond mechanical polishing, and chemical mechanical polishing. Among these, chemical mechanical polishing is the key process that determines the final surface quality of the substrate. Recent studies have reported that the material removal characteristics during chemical mechanical polishing changes according to the crystal orientations, however, detailed analysis of this phenomenon has not reported. In this work, we carried out chemical mechanical polishing of C(0001), R($1{\bar{1}}02$), and A($11{\bar{2}}0$) substrates with different sapphire crystal planes, and analyzed the effect of crystal orientation on the material removal characteristics and their correlations. We measured the material removal rate and frictional force to determine the material removal phenomenon, and performed nano-indentation to evaluate the material characteristics before and after the reaction. Our findings show that the material removal rate and frictional force depend on the crystal orientation, and the chemical reaction between the sapphire substrate and the slurry accelerates the material removal rate during chemical mechanical polishing.

Dishing and Erosion in Chemical Mechanical Polishing of Electroplated Copper

  • Yoon, In-Ho;Ng, Sum Huan;Hight, Robert;Zhou, Chunhong;Higgs III, C. Fred;Yao, Lily;Danyluk, Steven
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • pp.435-437
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    • 2002
  • Polishing of copper, a process called copper chemical mechanical polishing, is a critical, intermediate step in the planarization of silicon wafers. During polishing, the electrodeposited copper films are removed by slurries: and the differential polishing rates between copper and the surrounding silicon dioxide leads to a greater removal of the copper. The differential polishing develops dimples and furrows; and the process is called dishing and erosion. In this work, we present the results of experiments on dishing and erosion of copper-CMP, using patterned silicon wafers. Results are analyzed for the pattern factors and properties of the copper layers. Three types of pads - plain, perforated, and grooved - were used for polishing. The effect of slurry chemistries and pad soaking is also reported.

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Tribology Research Trends in Chemical Mechanical Polishing (CMP) Process (화학기계적 연마(CMP) 공정에서의 트라이볼로지 연구 동향)

  • Lee, Hyunseop
    • Tribology and Lubricants
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    • v.34 no.3
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    • pp.115-122
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    • 2018
  • Chemical mechanical polishing (CMP) is a hybrid processing method in which the surface of a wafer is planarized by chemical and mechanical material removal. Since mechanical material removal in CMP is caused by the rolling or sliding of abrasive particles, interfacial friction during processing greatly influences the CMP results. In this paper, the trend of tribology research on CMP process is discussed. First, various friction force monitoring methods are introduced, and three elements in the CMP tribo-system are defined based on the material removal mechanism of the CMP process. Tribological studies on the CMP process include studies of interfacial friction due to changes in consumables such as slurry and polishing pad, modeling of material removal rate using contact mechanics, and stick-slip friction and scratches. The real area of contact (RCA) between the polishing pad and wafer also has a significant influence on the polishing result in the CMP process, and many researchers have studied RCA control and prediction. Despite the fact that the CMP process is a hybrid process using chemical reactions and mechanical material removal, tribological studies to date have yet to clarify the effects of chemical reactions on interfacial friction. In addition, it is necessary to clarify the relationship between the interface friction phenomenon and physical surface defects in CMP, and the cause of their occurrence.

Evaluation of Chemical Mechanical Polishing Performances with Microstructure Pad (마이크로 표면 구조를 가지는 CMP 패드의 연마 특성 평가)

  • Jung, Jae-Woo;Park, Ki-Hyun;Chang, One-Moon;Park, Sung-Min;Jeong, Seok-Hoon;Lee, Hyun-Seop;Jeong, Hae-Do
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.651-652
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    • 2005
  • Chemical mechanical polishing (CMP) has emerged as the planarization technique of choice in integrated circuit manufacturing. Especially, polishing pad is considered as one of the most important consumables because of its properties. Generally, conventional polishing pad has irregular pores and asperities. If conditioning process is except from whole polishing process, smoothing of asperities and pore glazing occur on the surface of the pad, so repeatability of polishing performances cannot be expected. In this paper, CMP pad with microstructure was made using micro-molding technology and repeatability of ILD(interlayer dielectric) CMP performances and was evaluated.

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Analysis of the Lubricational Characteristics for Chemical-Mechanical Polishing Process (화학기계적 연마 가공에서의 윤활 특성 해석)

  • 박상신;조철호;안유민
    • Tribology and Lubricants
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    • v.15 no.1
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    • pp.90-97
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    • 1999
  • Chemical-Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active, abrasive containing slurry. CU process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves tribology. The liquid slurry is trapped between the wafer (work piece) and pad (tooling) forming a lubricating film. For the first step to understand material removal rate of the CMP process, the lubricational analyses were done with commercial 100mm diameter silicon wafers to get nominal clearance of the slurry film, roll and pitch angle at the steady state. For this purpose, we calculate slurry pressure, resultant forces and moments at the steady state in the range of typical industrial polishing conditions.

Visualization of the Slurry Flow-Field during Chemical Mechanical Polishing by PIV (PIV를 이용한 Chemical Mechanical Polishing 공정 중의 연마용액 유동흐름 측정)

  • Shin Sanghee;Kim MunKi;Yoon Youngbin;Koh Young-Ho
    • 한국가시화정보학회:학술대회논문집
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    • pp.48-51
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    • 2004
  • Chemical Mechanical Polishing(CMP) is popularly used in production of semiconductor because of large area polishing ability probability of improvement for more integrated circuit. However, present CMP processing causes some non-uniformity errors which can be critical for highly integrated circuit. Previous studies predict that flow-field of slurry during CMP can create non-uniformity, but no quantitative measurement has conducted. In this study, using PIV, slurry velocity flow-field during CMP is measured by changing the ratio of RPM of pad and carrier with tuned PIV system adequate for small room in CMP machine and Cabot's non-groove pad Epad-A100. The result show that velocity of slurry is majorly determined by pad-rpm and the ratio of between carrier and pad rpm make some changes in streamlines.

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