• Title, Summary, Keyword: Bonding

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Melting induced diffusion bonding of Rene 80 superalloys using boron doping method (Ren380 超合金의 보론 塗布法을 이용한 液化誘導擴散接合法의 硏究)

  • 정재필;강춘식;이보영
    • Journal of Welding and Joining
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    • v.9 no.3
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    • pp.26-33
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    • 1991
  • As it takes very long time for the Transient Liquid Phase(TLP) bonding, we tried to reduce the bonding time by changing insert material for the high diffusivity element. On this study boron powder was doped as a insert material on the bonding surface of Rene 80 superalloy, and diffusion treated at 1150.deg.C under vacuum. On this method differently from the TLP bonding the insert material was not melted during bonding but only the base metal reacted with the boron was inducedly melted. Therefore, as this bonding mechanism is different from the existing ones, it is suggested as a Melting Induced Diffusion Bonding. When this process was used for the diffusion bonding, the bonding time including homogenization decreased greatly compared to the conventional TLP bonding.

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Cu-SiO2 Hybrid Bonding (Cu-SiO2 하이브리드 본딩)

  • Seo, Hankyeol;Park, Haesung;Kim, Sarah Eunkyung
    • Journal of the Microelectronics and Packaging Society
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    • v.27 no.1
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    • pp.17-24
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    • 2020
  • As an interconnect scaling faces a technical bottleneck, the device stacking technologies have been developed for miniaturization, low cost and high performance. To manufacture a stacked device structure, a vertical interconnect becomes a key process to enable signal and power integrities. Most bonding materials used in stacked structures are currently solder or Cu pillar with Sn cap, but copper is emerging as the most important bonding material due to fine-pitch patternability and high electrical performance. Copper bonding has advantages such as CMOS compatible process, high electrical and thermal conductivities, and excellent mechanical integrity, but it has major disadvantages of high bonding temperature, quick oxidation, and planarization requirement. There are many copper bonding processes such as dielectric bonding, copper direct bonding, copper-oxide hybrid bonding, copper-polymer hybrid bonding, etc.. As copper bonding evolves, copper-oxide hybrid bonding is considered as the most promising bonding process for vertically stacked device structure. This paper reviews current research trends of copper bonding focusing on the key process of Cu-SiO2 hybrid bonding.

Bonding process parameter optimization of flip-chip bonder (Flip-chip 본딩 장비 제작 및 공정조건 최적화)

  • Shim H.Y.;Kang H.S.;Jeong H.;Cho Y.J.;Kim W.S.;Kang S.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • pp.763-768
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    • 2005
  • Bare-chip packaging becomes more popular along with the miniaturization of IT components. In this paper, we have studied flip-chip process, and developed automated bonding system. Among the several bonding method, NCP bonding is chosen and batch-type equipment is manufactured. The dual optics and vision system aligns the chip with the substrate. The bonding head equipped with temperature and force controllers bonds the chip. The system can be easily modified for other bonding methods such as ACF In bonding process, the bonding forte and temperature are known as the most dominant bonding parameters. A parametric study is performed for these two parameters. For the test sample, we used standard flip-chip test kit which consists of FR4 boards and dummy flip-chips. The bonding test was performed fur two types of flip-chips with different chip size and lead pitch. The bonding temperatures are chosen between $25^{\circ}C\;to\;300^{\circ}C$. The bonding forces are chosen between 5N and 300N. The bonding strength is checked using bonding force tester. After the bonding force test, the samples are examined by microscope to determine the failure mode. The relations between the bonding strength and the bonding parameters are analyzed and compared with bonding models. Finally, the most suitable bonding condition is suggested in terms of temperature and force.

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Design by Topology Optimization and Performance Test of Ultrasonic Bonding Module for Flip-Chip Packaging (초음파 플립칩 접합 모듈의 위상최적화 설계 및 성능 실험)

  • Kim, Ji Soo;Kim, Jong Min;Lee, Soo Il
    • Journal of Welding and Joining
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    • v.30 no.6
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    • pp.113-119
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    • 2012
  • Ultrasonic bonding is the novel packaging method for flip-chip with high yield and low-temperature bonding. The bonding module is a core part of the bonding machine, which can transfer the ultrasonic energy into the bonding spot. In this paper, we propose topology optimization technique which can make new design of boding modules due to the constraints on resonance frequency and mode shapes. The designed bonding module using topology optimization was fabricated in order to evaluate the bonding performance and reliable operation during the continuous bonding process. The actual production models based on the proposed design satisfied the target frequency range and ultrasonic power. The bonding test was performed using flip-chip with lead-free Sn-based bumps, the results confirmed that the bonding strength was sufficient with the designed bonding modules. Also the performance degradation of the bonding module was not observed after the 300-hour continuous process with bonding conditions.

Liquid Phase Diffusion Bonding Procedure of Rene80/B/Rene80 System -Liquid Phase Diffusion Bonding Using B Powder Coating Method (Rene80/B/Rene80계의 액상확산 접합과정 -B분말 도포법을 이용한 액상확산접합)

  • 정재필;강춘식
    • Journal of Welding and Joining
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    • v.13 no.2
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    • pp.132-138
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    • 1995
  • Rene80 superalloy was liquid phase diffusion bonded by using boron(B) as an insert material, where B has high diffusivity and higher melting point as an insert material. Bonding procedure and bonding mechanism of Rene80/B/Rene80 joint were investigated. As results, liquid metal was produced by solid state reaction between base metal and insert material on bonding zone. The liquid metal was produced preferentially at the grain boundary. Except for production of liquid metal, other bonding procedure was nearly same as TLP(Transient Liquid Phase) bonding. Bonding time, however, was reduced compared to prior result of TLP bonding. By bonding S.4ks at l453K, Ren80/B/Rene80 joint was isothermally solidified and homogenized where thickness of insert material was 7.5.mu.m.

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The Effect of Processing Variables on Self-Bonding Strength in Amorphous PEEK Films (비정질 PEEK 필름의 Self-Bonding강도에 미치는 제조공정변수의 영향)

  • Jo, Beom-Rae;Kardos, J.L.
    • Korean Journal of Materials Research
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    • v.5 no.2
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    • pp.191-196
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    • 1995
  • Self-bonding strength developed at the interface of amorphous PEEK films is highly sensitive to the processing variables(time, temperature, and pressure) during the bonding process. In order to examine the effects of these processing variables, amorphous PEEK films were bonded at various bonding conditions and the resultant interfacial bond strengths were measured using a modified single lap-shear test. Experimental results showed that the developed self-bonding strength increases with increase in bonding temperature and is directly proportional to the bonding time raised to the 1/4 power. The applied pressure seems only to produce better wetting at the beginning stage of the bonding process. Conclusively, the self-bonding of amorphous PEEK films provides a great potential for developing excellent bond strength approaching the strength of the parent material without any adhesives in structural applications.

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Warpage and Stress Simulation of Bonding Process-Induced Deformation for 3D Package Using TSV Technology (TSV 를 이용한 3 차원 적층 패키지의 본딩 공정에 의한 휨 현상 및 응력 해석)

  • Lee, Haeng-Soo;Kim, Kyoung-Ho;Choa, Sung-Hoon
    • Journal of the Korean Society for Precision Engineering
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    • v.29 no.5
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    • pp.563-571
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    • 2012
  • In 3D integration package using TSV technology, bonding is the core technology for stacking and interconnecting the chips or wafers. During bonding process, however, warpage and high stress are introduced, and will lead to the misalignment problem between two chips being bonded and failure of the chips. In this paper, a finite element approach is used to predict the warpages and stresses during the bonding process. In particular, in-plane deformation which directly affects the bonding misalignment is closely analyzed. Three types of bonding technology, which are Sn-Ag solder bonding, Cu-Cu direct bonding and SiO2 direct bonding, are compared. Numerical analysis indicates that warpage and stress are accumulated and become larger for each bonding step. In-plane deformation is much larger than out-of-plane deformation during bonding process. Cu-Cu bonding shows the largest warpage, while SiO2 direct bonding shows the smallest warpage. For stress, Sn-Ag solder bonding shows the largest stress, while Cu-Cu bonding shows the smallest. The stress is mainly concentrated at the interface between the via hole and silicon chip or via hole and bonding area. Misalignment induced during Cu-Cu and Sn-Ag solder bonding is equal to or larger than the size of via diameter, therefore should be reduced by lowering bonding temperature and proper selection of package materials.

A Study on the Bonding Performance of COG Bonding Process (COG 본딩의 접합 특성에 관한 연구)

  • Choi, Young-Jae;Nam, Sung-Ho;Kim, Kyeong-Tae;Yang, Keun-Hyuk;Lee, Seok-Woo
    • Journal of the Korean Society for Precision Engineering
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    • v.27 no.7
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    • pp.28-35
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    • 2010
  • In the display industry, COG bonding method is being applied to production of LCD panels that are used for mobile phones and monitors, and is one of the mounting methods optimized to compete with the trend of ultra small, ultra thin and low cost of display. In COG bonding process, electrical characteristics such as contact resistance, insulation property, etc and mechanical characteristics such as bonding strength, etc depend on properties of conductive particles and epoxy resin along with ACF materials used for COG by manufacturers. As the properties of such materials have close relation to optimization of bonding conditions such as temperature, pressure, time, etc in COG bonding process, it is requested to carry out an in-depth study on characteristics of COG bonding, based on which development of bonding process equipment shall be processed. In this study were analyzed the characteristics of COG bonding process, performed the analysis and reliability evaluation on electrical and mechanical characteristics of COG bonding using ACF to find optimum bonding conditions for ACF, and performed the experiment on bonding characteristics regarding fine pitch to understand the affection on finer pitch in COG bonding. It was found that it is difficult to find optimum conditions because it is more difficult to perform alignment as the pitch becomes finer, but only if alignment has been made, it becomes similar to optimum conditions in general COG bonding regardless of pitch intervals.

A Study on Liquid Phase Diffusion Bonding of STS304 using Cu-Mn-Si Insert alloy (Cu-Mn-Si Insert 합금을 이용한 스테인리스강의 액상확산접합에 관한 연구)

  • 임종태;안상욱
    • Journal of Welding and Joining
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    • v.15 no.4
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    • pp.136-142
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    • 1997
  • In this study, the amorphous foil filler, thickness of 20 - $20~30\mu\textrm{m}$ was made to develop Cu-7.5wt%Mn-7.5wt%Si insert alloy(melting point temperature : solidus line 1003K, liquidus line 1070K). Liquid phase diffusion bonding of 304 stainless steels (STS304), is carried out successfully by using developed Cu-7.5Mn-7.5Si insert alloy. Bonding conditions are taken from bonding pressure of 5MPa, bonding temperatures from 1073K to 1423K varied within 50K and brazing holding times of 0, 30, 60 and 240 minutes. As the results, the tensile strength in the liquid phase diffusion bonding is a little bit lower than that in the solid phase diffusion bonding. The authors find out that the liquid phase diffusion bonding needs lower bonding pressure than the others. Therefore, the liquid phase diffusion bonding had an excellent brazability in which the bonding process showed the typical mechanism of diffusion bonding. In corresponding, the new developed insert alloy of low melting pointed Cu-7.5Mn-7.5Si makes possible brazing between the STS304.

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Bonding Mechanism and Strength of Metals to Ceramics (금속과 세라믹의 접합기구와 접합강도)

  • Kee, Se-Ho;Jung, Jae-Pil;Kim, Won-Joong
    • Journal of Welding and Joining
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    • v.32 no.1
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    • pp.40-46
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    • 2014
  • Bonding technology and bonding mechanism of metal to ceramic including brazing, diffusion bonding, friction welding and etc were reviewed in this study. Various factors should be considered from a bonding design step to acquire a good bonding joint because of a large difference between metal and ceramic in crystal lattice, coefficient of thermal expansion and various properties. In addition, metal and ceramic bonding technologies are constantly being developed according to precise components, multi-function and application to harsh environment. However, improvement of bonding properties and bonding reliability also should be accompanied. Bonding of ceramics, such as $ZrO_2$, $Ti_3AlC_2$ and SiC, to metals like Ti-alloy, TiAl and steel were described in this paper.