• Title, Summary, Keyword: BPF : band Pass Filter

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Study on a design of Band Pass Filter C-band using silicon substrate (실리콘 기판을 이용한 Ku-band용 Band Pass Filter 설계에 관한 연구)

  • Lee, Tae-Il;Cui, Ming-Lu;Park, In-Chul;Kim, Hong-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.219-222
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    • 2003
  • In this paper, we designed a Ku-band BPF(Band Pass Filter) by microstrip line that most usually used a microwave device design and fabrication. Here a substrate of designed BPF were silicon substrate(${\varepsilon}_r=11.8$), and metal line was copper and silver/copper structure. And a configration of BPF was used hairpin pattern. A center frequency of designed BPF was 10GHz and their FBW(Fractional Band Width) was 20%(2GHz). It presented simulated results obtained for a 10GHz filter which yields an insertion loss of 0.1dB that ripple value related chebyshev reponse. Finallt we tried to make that a 30dB attenuation frequency was 20% of center frequency.

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Compact 40 GHz Hairpin Band-Pass Filter (초소형 40 GHz Hairpin 대역통과 여파기)

  • Lee, Young Chul
    • The Journal of Advanced Navigation Technology
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    • v.22 no.1
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    • pp.27-30
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    • 2018
  • In this study, a 40 GHz band pass filter(BPF) employing a hair-pin structure has been designed, fabricated, and characterized for millimeter-wave wireless communication applications. Using the 3 dimensional(3-D) electromagnetic(EM) tool and design equations of the hairpin BPF, the BPF was desgned on the 5 mil-thick Duroid substrate(RT5880) with a relative dielectric constant (${\varepsilon}_r$) of 2.2. The tapping point (t) of the U-shape resonator in the input and output port has been determined using extracted an external Q-factor ($Q_e$). The coupling coefficients between the other resonators are calculated by adjusting the physical dimensions for the desired response of the BPF. The fabricated BPF was characterized using probing method on a probe station. Its measured center frequency(fc) and fractional BW are 41.6 GHz and 7.43 %, respectively. The measured return loss is below -10 dB at the pass band and the insertion loss is 3.87 dB. The fabricated BPF is as small as $9.1{\times}2.8mm^2$.

A Narrow Bandwidth Microstrip Band-Pass Filter with Symmetrical Frequency Characteristics

  • Jun, Dong-Suk;Lee, Hong-Yeol;Kim, Dong-Young;Lee, Sang-Seok;Nam, Eun-Soo
    • ETRI Journal
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    • v.27 no.5
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    • pp.643-646
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    • 2005
  • This letter proposes a band-pass filter (BPF) with two transmission zeros based on a combination of parallel coupling and end coupling of half-wave transmission lines. The fabricated BPF exhibited a narrow bandwidth and two transmission zeros near the pass-band due to the end-coupled and shielding waveguide. At the center operation frequency of 60 GHz, the 20 dB bandwidth of the BPF is 1.0 GHz, which is almost 2% of the center operation frequency, and the insertion loss is 3.12 dB. Two transmission zeros reach approximately 40 dB at 58.5 and 62.5 GHz. The simulation results almost agree with the measured results.

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Design of Band Pass Filter using the Triple-Mode Resonators (3중모드 공진기를 이용한 대역통과 필터(BPF)의 설계)

  • 황재호
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.12 no.6
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    • pp.899-905
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    • 2001
  • This paper presents a triple-mode dielectric resonator far low loss and simple structure filter design. The BPF(Band Pass Filter) was designed using HFSS simulation results an4 fabricated using proposed resonators. The filter (3-stage BPF) has an insertion loss of about 0.9 dB at the center frequency of 1.93 GHz and a 3 dB bandwidth of about 25 MHz. If more complex characteristic is required, slot coupling between resonators can be used. Especially, the proposed BPF can be applied to the next generation mobile communication IMT-2000 system.

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Fabrication and CO2-sensing Characteristics of Optical Band-Pass Filter for 4.3 CO2 Wavelength (4.3 μm 파장 Optical Band-Pass Filter의 제작과 CO2 감도 특성)

  • Lee, Sang-Hoon;Kim, Soo-Hyun;Kim, Kwang-Ho
    • Journal of the Korean Ceramic Society
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    • v.39 no.2
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    • pp.210-215
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    • 2002
  • Optical Band-pass Filter(BPF) for the selected wavelength of 4300 nm was designed and fabricated on Si wager by alternately depositing Ge and $SiO_2$ thin layers by an electron beam evaporation technique. The fabricated BPF showed the optical transmittance characteristics of 58.2% with FWHM(Full Width at Half Maximum) of 204 nm at 4300 nm, but showed the transmittance less than 5% due to the reflectance over all the wavelength ranges except 4300 nm band. The $CO_2$ sensitivity of BPF was investigated with the transmittance as a function of $CO_2$ gas concentration using a sensing cell attached to FT-IR instrument. The transmittance of BPF was almost linearly decreased with increasing of $CO_2$ concentration in the range of from 500 to 5000 ppm. The sensing structure using double BPFs showed higher slop of transmittance vs $CO_2$ concentration, and thus higher gas sensitivity than that using a single BPF, even though the former had relatively lower transmittance.

A 41dB Gain Control Range 6th-Order Band-Pass Receiver Front-End Using CMOS Switched FTI

  • Han, Seon-Ho;Nguyen, Hoai-Nam;Kim, Ki-Su;Park, Mi-Jeong;Yeo, Ik-Soo;Kim, Cheon-Soo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.5
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    • pp.675-681
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    • 2016
  • A 41dB gain control range $6^{th}$-order band-pass receiver front-end (RFE) using CMOS switched frequency translated impedance (FTI) is presented in a 40 nm CMOS technology. The RFE consists of a frequency tunable RF band-pass filter (BPF), IQ gm cells, and IQ TIAs. The RF BPF has wide gain control range preserving constant filter Q and pass band flatness due to proposed pre-distortion scheme. Also, the RF filter using CMOS switches in FTI blocks shows low clock leakage to signal nodes, and results in low common mode noise and stable operation. The baseband IQ signals are generated by combining baseband Gm cells which receives 8-phase signal outputs down-converted at last stage of FTIs in the RF BPF. The measured results of the RFE show 36.4 dB gain and 6.3 dB NF at maximum gain mode. The pass-band IIP3 and out-band IIP3@20 MHz offset are -10 dBm and +12.6 dBm at maximum gain mode, and +14 dBm and +20.5 dBm at minimum gain mode, respectively. With a 1.2 V power supply, the current consumption of the overall RFE is 40 mA at 500 MHz carrier frequency.

Design of Multilayer Ceramic Chip Band Pass Filter with an Attenuation Pole (감쇠극을 갖는 적층형 세라믹 칩 필터의 설계)

  • 강종윤;심성훈;최지원;박용욱;이동윤;윤석진;김현재
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.8
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    • pp.740-743
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    • 2003
  • A multi-layer ceramic (MLC) chip type band-pass filter (BPF) is presented. The MLC chip BPF has the benefits of low cost and small size. The BPF consists of coulped stripline resonators and coupling capacitors. The BPF is designed to have an attenuation pole at below the passband for a receiver band of IMT-2000 handset. The computer-aided design technology is applied for analysis of the BPF frequency characteristics. The passband and attenuation pole depend on the coupling between resonators and coupling capacitance. The frequency characterics of the passband and attenuation pole are analyzed with the variation of the coupling between resonators and coupling capacitance. An equivanlent circuit and structure of MLC chip BPF are proposed. The frequency characteristics of the BPF is well acceptable for IMT-2000 application.

A Design of LTCC Balun-BPF for 2.45GHz Band (2.45GHz 대역 LTCC Balun-BPF의 설계)

  • Jung, Eul-Young;Choi, Kyoung;Hwang, Hee-Yong
    • Journal of Industrial Technology
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    • v.25 no.B
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    • pp.175-182
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    • 2005
  • This paper presents a LTCC Balun-BPF, which is a BPF(band pass filter) with a Balun in a single LTCC chip for the direct interface with a MMIC chip having balanced inputs. The physical dimension of the designed Balun-BPF is $2.4{\times}2.0{\times}0.88mm^3$ and the used dielectric constant ${\varepsilon}_r$ is 36. A Balun of three-lines structure with striplines and a BPF of comb-line structure was combined into the Balun-BPF. The simulated result shows 4.8㏈ of insertion loss, 178~179 degree of the phase imbalance, 14㏈ of the return.

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Design of Multilayer Ceramic Chip Band pas Filter with an attenuation pole (감쇠극을 갖는 적층형 세라믹 칩 필터의 설계)

  • 강종윤;심성훈;최지원;박용욱;윤석진;김현재
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.123-126
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    • 2002
  • A proposed multi-layer ceramic (MLC) chip type band-pass filter (BPF) is presented. The MLC chip BPF has the benefits of low cost and small size. The BPF consists of coulped stripline resonators and coupling capacitors. The BPF is designed to have an attenuation pole at below the passband for a receiver band of IMT-2000 handset. The computer-aided design technology is applied for analysis of the BPF frequency characteristics. The passband and attenuation pole depend the coupling between resonators and coupling capacitance. The frequency characterics of the passband and attenuation pole are analysed with the variance of the coupling between resonators and coupling capacitance. An equivalent circuit and structure of MLC chip BPF are proposed. The frequency characteristics of the BPF is well acceptable for IMT-2000 application.

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A Bandpass Filter with a Desired Phase Shift at The Center Frequency (중심주파수에서 원하는 위상변위가 가능한 대역통과 필터)

  • Kim, Hong-Joon
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.61 no.7
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    • pp.998-1000
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    • 2012
  • By cascading RHTL (Right-Handed Transmission Line) and LHTL (Left-Handed Transmission Line), we fabricated a BPF (Band Pass Filter) in which the phase propagation at the pass band center frequency is fixed as we want. We utilized a positive phase propagation of a RHTL which is a form of LPF (Low Pass Filter) and negative phase propagation of LHTL which is a form of HPF (High Pass Filter). Therefore, if RHTL and LHTL are cascaded, a BPF can be constructed and the phase propagation inside the passband is decided by the number of RHTLs and LHTLs. In this paper, we provide a detailed theory related to it and proved the theory with an actual experiment. In the experiment, we fabricated two BPFs with similar passband. One with $90^{\circ}$ phase shift and the other with $-90^{\circ}$ phase shift at the center of passband. The result of simulation and actual experiment agrees well. This proves the suggested theory is correct and feasible.