• Title, Summary, Keyword: AlN

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A Study on the Phase Transformations of (TiAl)N Films Deposited by TFT Sputtering System (TFT(Two-Facing-Targets) 스퍼터장치에 의해 증착된 (TiAl)N 박막의 상변태에 관한 연구)

  • Han, Chang-Suk
    • Journal of the Korean Society for Heat Treatment
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    • v.18 no.5
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    • pp.281-287
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    • 2005
  • Titanium aluminium nitride((TiAl)N) film is anticipated as an advanced coating film with wear resistance used for drills, bites etc. and with corrosion resistance at a high temperature. In this study, (TiAl)N thin films were deposited both at room temperature and at elevated substrate temperatures of 573 to 773 K by using a two-facing-targets type DC sputtering system in a mixture Ar and $N_2$ gases. Atomic compositions of the binary Ti-Al alloy target is Al-rich (25Ti-75Al (atm%)). Process parameters such as precursor volume %, substrate temperature and Ar/$N_2$ gas ratio were optimized. The crystallization processes and phase transformations of (TiAl)N thin films were investigated by X-ray diffraction, field-emission scanning electron microscopy. The microhardness of (TiAl)N thin films were measured by a dynamic hardness tester. The films obtained with Ar/$N_2$ gas ratio of 1:3 and at 673 K substrate temperature showed the highest microhardness of $H_v$ 810. The crystallized and phase transformations of (TiAl)N thin films were $Ti_2AlN+AlN{\rightarrow}TiN+AlN$ for Ar/$N_2$ gas ratio of 1:3, $Ti_2AlN+AlN{\rightarrow}TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 1:1 and $TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN{\rightarrow}Ti_2AlN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 3:1. The above results are discussed in terms of crystallized phases and microhardness.

Characteristics of TiAlN Film on Different Buffer Layer by D.C Magnetron Sputter (D.C magnetron sputter법으로 증착된 TiAlN의 중간층에 따른 특성연구)

  • Kim, Myoung-Ho;Lee, Doh-Jae;Lee, Kwang-Min;Kim, Woon-Sub;Kim, Min-Ki;Park, Burm-Su;Yang, Kook-Hyun
    • Korean Journal of Materials Research
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    • v.18 no.10
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    • pp.558-563
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    • 2008
  • TiAlN films were deposited on WC-5Co substrates with different buffer layers by D.C. magnetron sputtering. The films were evaluated by microstructural observations and measuring of preferred orientation, hardness value, and adhesion force. As a process variable, various buffer layers were used such as TiAlN single layer, TiAlN/TiAl, TiAlN/TiN and TiAlN/CrN. TiAlN coating layer showed columnar structures which grew up at a right angle to the substrates. The thickness of the TiAlN coating layer was about $1.8{\mu}m$, which was formed for 200 minutes at $300^{\circ}$. XRD analysis showed that the preferred orientation of TiAlN layer with TiN buffer layer was (111) and (200), and the specimens of TiAlN/TiAl, TiAlN/CrN, TiAlN single layer have preferred orientation of (111), respectively. TiAlN single layer and TiAlN/TiAl showed good adhesion properties, showing an over 80N adhesion force, while TiAlN/TiN film showed approximately 13N and the TiAlN/CrN was the worst case, in which the layer was destroyed because of high internal residual stress. The value of micro vickers hardness of the TiAlN single layer, TiAlN/TiAl and TiAlN/TiN layers were 2711, 2548 and 2461 Hv, respectively.

Growth of AlN Thin Film on Sapphire Substrates and ZnO Templates by RF-magnetron Sputtering (RF 마그네트론 스퍼터링법을 이용하여 사파이어 기판과 ZnO 박막 위에 증착한 AlN 박막의 특성분석)

  • Na, Hyun-Seok
    • Journal of the Korean Vacuum Society
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    • v.19 no.1
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    • pp.58-65
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    • 2010
  • AlN thin films were deposited on sapphire substrates and ZnO templates by rf-magnetron sputtering. Powder-sintered AlN target was adopted for source material. Thickness of AlN layer was linearly dependent on plasma power from 50 to 110 W, and it decreased slightly when working pressure increased from 3 to 10 mTorr due to short mean free path of source material sputtered from AlN target by Ar working gas. When $N_2$ gas was mixed with Ar, the thickness of AlN layer decreased significantly because of low sputter yield of nitrogen. AlN layer was also deposited on ZnO template. However, it showed weak thermal stability that the interface between AlN and ZnO was deteriorated by rapid thermal annealing treatment above $700^{\circ}C$. In addition, ZnO layer was largely attacked by MOCVD ambient gas of hydrogen and ammonia around $700^{\circ}C$ through inferior AlN layer deposited by sputtering. And AlN layers were fully peeled off above $900^{\circ}C$.

Fabrication of AlN Powder by Self-propagating High-temperature Synthesis II. The formation Mechanism of AlN Powder from Al Powder (자전 고온 반응 합성법에 의한 AlN 분말의 제조 II, Al 분말로부터 AlN 분말의 형성기구)

  • 안도환;전형조;김석윤;김용석
    • Journal of the Korean Ceramic Society
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    • v.33 no.10
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    • pp.1089-1094
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    • 1996
  • In this study the formation mechanism of AlN synthesized by SHS(Self-propagating high-temperature Syn-thesis) was studied in order to obtain uniform AlN powder size and morphology. Based on the morphology of AlN synthesized and the calculation of the temperature of Al powder as a function AlN layer thickness the formation mechanism of AlN was proposed.

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Preparation of AlN Powder by Combustion Reaction in the System of Al-AlN-NH4Cl (Al-AlN-NH4Cl 계에서 연소반응에 의한 AlN 분말의 제조)

  • Min, Hyun-Hong;Won, Chang-Whan
    • Journal of the Korean Ceramic Society
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    • v.43 no.7
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    • pp.445-450
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    • 2006
  • The preparation of AlN powder by SHS in the system of $Al-AlN-NH_4Cl$ was investigated in this study. In the preparation of AlN powder, the effect of gas pressure and the composition such as Al, AlF, and additive in mixture on the reactivity were investigated. At 60 atm of the initial inert gas pressure in reactor, the optimum composition for the preparation of pure AlN was 35 wt%Al+5 wt% $NH_4Cl+60wt%$AlN. The AlN powder synthesized in this condition was a single phase AlN with a whisker morphology.

A Study on the Interfacial Bonding in AlN Ceramics/Metals Joints: I. Residual Stress Analysis of AlN/Cu and AlN/W Joints Produced by Active-Metal Brazing (AlN 세라믹스와 금속간 계면접합에 관한 연구 : I. AlN/Cu 및 AlN/W 활성금속브레이징 접합체의 잔류응력 해석)

  • Park, Sung-Gye;Lee, Seung-Hae;Kim, Ji-Soon;You, Hee;Yum, Young-Jin
    • Korean Journal of Materials Research
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    • v.9 no.10
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    • pp.962-969
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    • 1999
  • Elastic and elasto-plastic stress analyses of AlN/Cu and AlN/W pints produced by active-metal brazing method using Ag-Cu-Ti insert-metal were performed with use of Finite-Element-Method(FEM). The results of stress analyses were compared with those from the pint strength tests and the observations of fracture behaviors. It was shown that a remarkably larger maximum principal stress is built in the AlN/Cu pint compared to the A1N/ W joint. Especially, the stress concentration with tensile component was confirmed at the free surface close to the bonded interface of AlN/Cu. The elasto-plastic analysis under consideration of stress relaxation effect of Ag-Cu-Ti insert possessing a so-called 'soft-metal effect' showed that the insert leads to a lowering of maximum principal stress in AlNiCu pint, even though an increase of the insert thickness above 100$\mu\textrm{m}$ could not bring its further decrease. The maximum pint strengths measured by shear test were 52 and 108 MPa for AlNiCu and AlN/W pints. respectively. Typical fractures of AlN/Cu pints occurred in a form of 'dome' which initiated from the free surface of AlN close to the bonded interface and proceeded towards the AlN inside forming a large angle. AlN/W pints were usually fractured at AlN side along the interface of AlN/insert-metal.

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High Temperature Oxidation of TiN, Ti(C,N), TiAlSiN, TiZrAlN, TiAlCrSiN Thin Films (TiN, Ti(C,N), TiAlSiN, TiZrAlN, TiAlCrSiN 박막의 고온산화)

  • Kim, Min-Jeong;Park, Sun-Yong;Lee, Dong-Bok
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • pp.192-192
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    • 2014
  • TiN, Ti(C,N), TiAlSiN, TiZrAlN, TiAlCrSiN 박막을 제조한 후, 이 들의 고온산화 특성을 SEM, EPMA, TGA, TEM, AES 등을 이용하여 조사하고, 산화기구를 제안하였다. 산화속도, 생성되는 산화물의 종류와 분포는 박막의 조성, 산화온도, 산화시간에 따라 변하였다.

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Effects of AlN Ratio on Microstructure of AlN Films Grown by PAMBE (PAMBE를 이용하여 성장된 AlN 박막의 미세구조에 미치는 Al/N 비율 영향)

  • 홍성의;한기평;백문철;조경익;윤순길
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.12
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    • pp.972-978
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    • 2001
  • Some effects of Al/N ratio on microstructure of AlN films grown on Si(111) substrates by PAMBE were investigated. Al/N ratio was controlled by rf power of N$_2$ plasma source system. Al excess or N excess conditions were obtained below or above 350 W rf power, respectively. Surface roughness and morphology of AlN film grown at Al/N=1.0 showed the best result. Under Al excess condition, it was suggested that excess Al atoms which did not contribute to the growth of AlN film prevent the normal crystal growth and make abnormal growth of some columns. However, under N excess condition, it was explained that some of the excess active N source turned into gas state and then desorbed out from substrate.

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AlN preparation by Self-propagation High-temperature Synthesis (SHS) in Al-N2 and Al-N2-AIN system (Al-N2와 Al-N2-AlN계에서 고온자전연소법에 의한 AlN 합성)

  • 이재령;이익규;안종관;김동진;안양규;정헌생
    • Journal of Korean Powder Metallurgy Institute
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    • v.11 no.4
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    • pp.294-300
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    • 2004
  • This study for preparation of aluminum nitride (AlN) with high purity was carried out by self-propagating high-temperature synthesis method in two different systems, $Al-N_{2}$ and $Al-N_{2}$-AlN, with the change of nitrogen gas pressure and dilution factor. On the occasion of $Al-N_{2}$ system, unreacted aluminum was detected in the product in spite of high nitrogen pressure, 10 MPa, This may be caused by obstructing nitrogen gas flow to inner part of molten and agglomerate of aluminum, formed in pre-heating zone. In $Al-N_{2}$-AlN system, AlN with a purity of 95% or ever can be prepared in the condition of $f_{Dil}\geq0.5$, $P_{N_{2}}\geq$ 1 MPa, and the purity can be elevated to 98% over in the condition of $f_{Dil}$ = 0.7 and $P_{N_{2}}$ = 10 MPa.

Microstructures, mechanical properties, and tribological behaviors of Cr-Al-N, Cr-Si-N, and Cr-Al-Si-N coatings by a hybrid coating system (하이브리드 시스템을 이용한 Cr-Al-N, Cr-Si-N, Cr-Al-Si-N 코팅막의 미세구조와 기계적 특성과 마찰 거동에 관한 연구)

  • Yun, Chang-Seong;Kim, Gwang-Ho
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • pp.128-129
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    • 2007
  • Cr-Al-N, Cr-Si-N 그리고 Cr-Al-Si-N 코팅막을 WC-Co 모재위에 AIP법과 DC 마그네트론 스퍼터링 법을 결합한 하이브리드 시스템을 이용하여 합성하였으며, Si함량에 따른 Cr-Al-Si-N 코팅막의 미세구조, 기계적 특성과 마찰 거동에 관해 비교 연구하였다. Cr-Si-N(${\sim}35GPa$)과 Cr-Al-Si-N(${\sim}55GPa$) 코팅막의 경도값은 CrN(${\sim}23GPa$)과 Cr-Al-N(${\sim}25GPa$) 코팅막과 비교하여 각각 증가하였고, CrN(${\sim}0.50$)과 Cr-Al-N(${\sim}0.84$)의 평균 마찰계수는 Si 함량이 9 at.% 일때, Cr-Si-N(${\sim}0.30$)과 Cr-Al-Si-N(${\sim}0.57$)으로 각각 감소하였다.

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