• Title, Summary, Keyword: Al-doped ZnO

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Preparation and Characterization of Al-doped ZnO Transparent Conducting Thin Film by Sol-Gel Processing (솔-젤법에 의한 Al-doped ZnO 투명전도막의 제조 및 특성)

  • Hyun, Seung-Min;Hong, Kwon;Kim, Byong-Ho
    • Journal of the Korean Ceramic Society
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    • v.33 no.2
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    • pp.149-154
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    • 1996
  • ZnO and Al-doped ZnO thin films were prepared by sol-gel dip-coating method and electrical and optical properties of films were investigated. Using the zinc acetate dihydrate and acetylaceton(AcAc) as a chelating agent stable ZnO sol was synthesized with HCl catalyst. Adding aluminium chloride to the ZnO sol Al-doped ZnO sol could be also synthesized. As Al contents increase the crystallinity of ZnO thin film was retarded by increased compressive stress in the film resulted from the difference of ionic radius between Zn2+ and Al3+ The thickness of ZnO and Al-doped ZnO thin film was in the range of 2100~2350$\AA$. The resistivity of ZnO thin films was measured by Van der Pauw method. ZnO and Al-doped ZnO thin films with annealing temperature and Al content had the resistivity of 0.78~1.65$\Omega$cm and ZnO and Al-doped ZnO thin film post-annealed at 40$0^{\circ}C$ in vacuum(5$\times$10-5 torr) showed the resistivity of 2.28$\times$10-2$\Omega$cm. And the trans-mittance of ZnO and Al-doped ZnO thin film is in the range of 91-97% in visible range.

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Electrical Properties of V-I Curve of p-ZnO:Al/n-ZnO:Al Junction Fabricate by RF Magnetron Sputtering

  • Jin, Hu-Jie;So, Soon-Jin;Song, Min-Jong;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.408-409
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    • 2007
  • Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

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Properties of Al-doped ZnO Transparent Conducting Oxide Films Deposited with Ar Flow Rate by RF Magnetron Sputtering (RF 마그네트론 스퍼터링법으로 증착된 Al 도핑된 ZnO 투명 전도 산화막의 Ar 유량에 따른 특성)

  • Yi, I.H.;Kim, D.K.;Kim, H.B.
    • Journal of the Korean Vacuum Society
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    • v.19 no.3
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    • pp.206-210
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    • 2010
  • Al-doped ZnO thin films were deposited with various Ar flow rate by RF magnetron sputtering, and theire properties were studied. A high-quality thin film was obtained by controlling the Ar flow rate, and the influence of the Ar flow rate on the Al-doped ZnO thin film was confirmed. In all Al-doped ZnO thin films, light transmittance had above 80%. Through Hall measurement and X-ray photoelectron spectrometer, the sample of 60 sccm, which had the lowest resistivity, showed the lower Al concentration. This result was attributed to oxygen vacancy rather than Al concentration.

Preparation and Luminescent Properties of Zn2SiO4:Mn,Al Green Phosphors (Zn2SiO4:Mn,Al 녹색 형광체의 제조와 발광특성)

  • Lee, Ji-Young;Yu, Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.4
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    • pp.363-366
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    • 2007
  • [ $Zn_2SiO_4:Mn$ ] green phosphors doped with $NH_4Cl$ and Al for PDP were synthesized by solid state reaction method. The luminescence of 532 nm in $Zn_2SiO_4:Mn$ phosphors was associated with $^4T_1{\to}^6A_1$ transition. Photoluminescence intensity of $Zn_2SiO_4:Mn$ doped with $NH_4Cl$ 15 mol% increased about two times as compared with that of $NH_4Cl$ non-doped sample. The color of the emission of Al-doped $Zn_2SiO_4:Mn$ phosphors changed to yellowish green.

Fabrication of Transparent and Conductive Al-doped ZnO Films for Solar Cells (태양전지용 ZnO:Al 투명전도막의 제작)

  • Tark, Sung-Ju;Kang, Min-Gu;Kim, Dong-Hwan
    • Korean Journal of Materials Research
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    • v.16 no.7
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    • pp.449-454
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    • 2006
  • Al-doped zinc oxide (ZnO:Al) films for transparent electrodes in thin film solar cells were deposited on glass substrates at a low temperature of $200^{\circ}C$ by rf magnetron sputtering. The transmittance of the ZnO:Al films in the visible range was 87%. The lowest resistivity of the ZnO:Al films was about $5.8{\times}10^{-4}{\Omega}$ cm at the Al content of 2.5 wt%. After deposition, the surface of ZnO:Al films were etched in dilute HCl (0.5%) for the investigation of the change in the electrical properties and the surface morphology due to etching.

Properties of Aluminum Doped Zinc Oxide Thin Film Prepared by Sol-gel Process

  • Yi, Sung-Hak;Kim, Jin-Yeol;Jung, Woo-Gwang
    • Korean Journal of Materials Research
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    • v.20 no.7
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    • pp.351-355
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    • 2010
  • Transparent conducting aluminum-doped ZnO thin films were deposited using a sol-gel process. In this study, the important deposition parameters were investigated thoroughly to determine the appropriate procedures to grow large area thin films with low resistivity and high transparency at low cost for device applications. The doping concentration of aluminum was adjusted in a range from 1 to 4 mol% by controlling the precursor concentration. The annealing temperatures for the pre-heat treatment and post-heat treatment was $250^{\circ}C$ and 400-$600^{\circ}C$, respectively. The SEM images show that Al doped and undoped ZnO films were quite uniform and compact. The XRD pattern shows that the Al doped ZnO film has poorer crystallinity than the undoped films. The crystal quality of Al doped ZnO films was improved with an increase of the annealing temperature to $600^{\circ}C$. Although the structure of the aluminum doped ZnO films did not have a preferred orientation along the (002) plane, these films had high transmittance (> 87%) in the visible region. The absorption edge was observed at approximately 370 nm, and the absorption wavelength showed a blue-shift with increasing doping concentration. The ZnO films annealed at $500^{\circ}C$ showed the lowest resistivity at 1 mol% Al doping.

Effect of Substrate Temperature on Electrical and Optical Properties of Al Doped ZnO Thin Films by Continuous Composition Spread

  • Jung, Keun;Lee, Jin-Ju;Choi, Won-Kook;Yoon, Seok-Jin;Choi, Ji-Won
    • Journal of Sensor Science and Technology
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    • v.21 no.4
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    • pp.263-269
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    • 2012
  • Al doped ZnO(AZO) thin films were deposited at different substrate temperatures by a continuous composition spread(CCS) method. Various compositions of Al doped ZnO thin films deposited at substrate temperatures between 0 and $250^{\circ}C$ were explored to find excellent electrical and optical properties. The AZO thin film deposited at $100^{\circ}C$ had the lowest resistivity, $9{\times}10^{-4}{\Omega}$ cm and its average transmittance at the 400 to 700 nm wavelength region was 92 %. Optimized composition of the AZO thin film which had the lowest resistivity and high transmittance was 3.13 wt% Al doped ZnO.

Characterization of F- and Al-codoped ZnO Transparent Conducting Thin Film prepared by Sol-Gel Spin Coating Method

  • Nam, Gil Mo;Kwon, Myoung Seok
    • Journal of the Korean Ceramic Society
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    • v.53 no.3
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    • pp.338-342
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    • 2016
  • ZnO thin film co-doped with F and Al was prepared on a glass substrate via simple non-alkoxide sol-gel spin coating. For a fixed F concentration, the addition of Al co-dopant was shown to reduce the resistivity mainly due to an increase in electrical carrier density compared with ZnO doped with F only, especially after the second post-heat-treatment in a reducing environment. There was no effective positive contribution to the reduction in resistivity due to the mobility enhancement by the addition of Al co-dopant. Optical transmittance of the ZnO thin film co-doped with F and Al in the visible light domain was shown to be higher than that of the ZnO thin film doped with F only.

Power 및 temperature에 의한 증착률 변화와 Al-doped ZnO의 특성변화에 관한 연구

  • An, Si-Hyeon;Park, Cheol-Min;Jo, Jae-Hyeon;Jang, Gyeong-Su;Baek, Gyeong-Hyeon;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.107-107
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    • 2011
  • 오늘 날 transparent conductive oxide는 다양한 분야에서 활용되고 있다. 최근에는 태양전지 분야에서도 많이 활용되고 있으며, 초기에는 transmittance 및 낮은 sheet resistance 특성을 가지는 ITO가 많이 활용되었지만 thin film solar cell와 같이 hydrogenation 공정에 약한 ITO보다는 Al-doped ZnO가 사용되기 시작하면서 많은 연구가 진행되고 있다. 본 연구에서는 thin film solar cell 및 silicon heterojunction solar cell에 적용 가능한 Al-doped ZnO에 관한 연구로써 a-Si:H의 Si-H bonds에 영향을 주지 않는 낮은 영역의 substrate temperature와 power로 Al-doped ZnO를 형성하고 상기 parameter에 따른 Al-doped ZnO의 특성 변화에 대해서 분석하였다. 특히 substrate temperature가 변화할수록 carrier concentration 및 sheet resistance가 많은 변화를 보였으며 이로 인하여 transmittance 특성이 온도에 따라 좋아지다가 너무 높은 온도에서는 오히려 좋지 않게 되었다. 이는 너무 높은 carrier concentration은 free carrier absorption에 의해 transmittance 특성을 오히려 좋지 않게 한다. 우리는 본 연구를 통해 92.677% (450 nm), 90.309% (545 nm), 94.333% (800 nm)의 transmittance를 얻을 수 있었다.

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Properties of Zinc oxide films prepared by sol-gel dip coating (Sol-gel dip coating에 의한 ZnO 투명전도막의 특성고찰)

  • 김범석;구상모;김창열
    • Proceedings of the Materials Research Society of Korea Conference
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    • pp.191-191
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    • 2003
  • 가시광선영역에서 높은 광학적 투명도를 갖는 n-type 반도체인 ZnO 박막은 넓은 범위에서 응용되고 있다. 현재 ZnO 박막의 특성 향상을 위하여 여러 원소(Al, Ga)의 도핑을 시도하고 있다. 특히 Al-doped ZnO 박막은 sol-gel dip coating에 의해서도 높은 전기전도도와 투과율로 활발히 연구되고 있다 본 논문에서는 여러 도핑농도를 갖는 Al-doped ZnO 박막이 sol-gel dip coating법에 의해 준비되었다. Al-doped ZnO 박막은 zinc acetate [Zn($CH_3$COO$_2$)ㆍ2$H_2O$] powder 와 여러 도핑농도를 갖는 aluminum nitrate (Al(NO$_3$)$_3$ㆍ9$H_2O$) powder를 알코올에 용해하여 $H_2O$, Ethylene glycol, Ethylene diamine 등을 첨가하여 제조하였다 XRD와 SEM (Scanning electron microscope)이 막의 상형성 분석을 위해 이용되었으며, 가시광선 영역 투과율(UV/VIS spectrophotometer)과 표면전기저항(four point probe)이 주요 특성으로 분석되었다.

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