• Title, Summary, Keyword: Ag-doping

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Ag Doping Effect on Li[Ni0.2Li0.2Mn0.6]O2 Cathode Material (Li[Ni0.2Li0.2Mn0.6]O2 양극물질의 Ag 도핑(Doping) 효과)

  • Ryu, Jea-Hyeok;Kim, Seuk-Buom;Park, Yong-Joon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.3
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    • pp.249-254
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    • 2008
  • Ag doping effect on $Li[Ni_{0.2}Li_{0.2}Mn_{0.6}]O_2$ cathode material was studied. Specially, we focused on rate performance of Ag doped samples. The $Li[Ni_{0.2}Li_{0.2}Mn_{0.6}]O_2$ powder was prepared by simple combustion method and the Ag was doped using $AgNO_3$ during gelation process. Based on X-ray diffraction analysis, there was no structural change by Ag doping, but the 'metallic' form of Ag was included in the doped powder. Both bare and Ag 1 wt.% doped sample showed similar discharge capacity of 242 mAh/g at 0.2C rate. However, as the increase of charge-discharge rate to 3C, Ag 1 wt.% doped sample showed higher discharge capacity (172 mAh/g) and better cyclic performance than those of bare sample. The discharge capacity of Ag 5 wt.% doped sample was relatively low at all rate condition. However it displayed better rate performance than other samples.

Redox doping in OLEDs and other organic electronics applications

  • Birnstock, Jan;Werner, Ansgar;Blochwitz-Nimoth, Jan;Canzler, Tobias;Murano, Sven;Huang, Qiang;Lux, Andrea
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1315-1318
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    • 2008
  • It is well-known that PIN technology is beneficial for numerous OLED applications, e.g. active and passive matrix displays, lighting and signage. Furthermore, it can be used for other organic electronic applications such as OTFTs and organic solar cells. Here, the state of the art of the PIN technology and the latest results from the different application fields are presented.

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PL and TL behaviors of Ag-doped SnO2 nanoparticles: effects of thermal annealing and Ag concentration

  • Zeferino, R. Sanchez;Pal, U.;Melendrez, R;Flores, M. Barboza
    • Advances in nano research
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    • v.1 no.4
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    • pp.193-202
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    • 2013
  • In this article, we present the effects of Ag doping and after-growth thermal annealing on the photoluminescence (PL) and thermoluminescence (TL) behaviors of $SnO_2$ nanoparticles. $SnO_2$ nanoparticles of 4-7 nm size range containing different Ag contents were synthesized by hydrothermal process. It has been observed that the after-growth thermal annealing process enhances the crystallite size and stabilizes the TL emissions of $SnO_2$ nanostructures. Incorporated Ag probably occupies the interstitial sites of the $SnO_2$ lattice, affecting drastically their emission behaviors on thermal annealing. Both the TL response and dose-linearity of the $SnO_2$ nanoparticles improve on 1.0% Ag doping, and subsequent thermal annealing. However, a higher Ag content causes the formation of Ag clusters, reducing both the TL and PL responses of the nanoparticles.

Electrolyte Mechanizm Study of Amorphous Ge-Se Materials for Memory Application (Ge-Se의 스위칭 특성 향상을 위한 Sb-doping에 관한 연구)

  • Nam, Ki-Hyun;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.69-69
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    • 2009
  • In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sh-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sh-doped Ge-Se-Te thin films.

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A Study on Ion Exchange Method for Effective Ag Doping of Sputtering-Deposited CdTe Thin Film (스퍼터링 증착한 CdTe 박막의 효과적인 Ag 도핑을 위한 이온 교환법 연구)

  • Kim, Cheol-Joan;Park, Ju-Sun;Lee, Woo-Sun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.60 no.6
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    • pp.1169-1174
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    • 2011
  • CdTe thin-film solar cell technology is well known that it can theoretically improve its conversion efficiency and manufacturing costs compared to the conventional silicon solar cell technology, due to its optical band gap energy (about 1.45eV) for solar energy absorption, high light absorption capability and low cost requirements for producing solar cells. Although the prior studies obtained the high light absorption, CdTe thin film solar cell has not been come up to the sufficient efficiency yet. So, doping method was selected for the improvement of the electrical characteristics in CdTe solar cells. Some elements including Cu, Ag, Cd and Te were generally used for the p-dopant as substitutional acceptors in CdTe thin film. In this study, the sputtering-deposited CdTe thin film was immersed in $AgNO_3$ solution for ion exchange method to dope Ag ions. The effects of immersion temperature and Ag-concentration were investigated on the optical properties and electrical characteristics of CdTe thin film by using Auger electron spectroscopy depth-profile, UV-visible spectrophotometer, and a Hall effect measurement system. The best optical and electrical characteristics were sucessfully obtained by Ag doping at high temperature and concentration. The larger and more uniform diffusion of Ag ions made increase of the Ag ion density in CdTe thin film to decrease the series resistance as well as mede the faster diffusion of light by the metal ions to enhance the light absorption.

The characteristic of diffraction efficiency depending on Ag doping on film of amorphous AsGeSeS (비정질 As-Ge-Se-S 박막에서의 Ag 도핑에 따른 회절효율 특성 연구)

  • Lee, Ki-Nam;Yeo, Cheol-Ho;Kyung, Shin;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.1066-1069
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    • 2004
  • This paper shows the characteristic of diffraction efficiency on film of amorphous AsGeSeS according to Ag doping. We compare amorhous AsGeSeS with the characteristics of AsGeSeS/Ag (10nm) and AsGeSeS/Ag (20m). We made film such as $\lambda$, $\lambda/2$, $\lambda/4$, $\lambda/8on$ the basis of 633nm, which is wavelength of recording laser(He-Ne). The highest diffraction efficiency on AsGeSeS film is $\lambda/4$, followed by $\lambda/2$, $\lambda$, $\lambda/8$. In the case of Ag 10nm, it is followed by $\lambda/4$, $\lambda/2$, $\lambda$, $\lambda/8$. On the occasion of Ag 20nm, it seems that the highest is $\lambda/2$, followed by $\lambda$, $\lambda/4$, $\lambda/8$. In other words, it appears that the highest point on AsGeSeS(158nm) single layer is 0.09%, the one of AsGeSeS(158nm)/Ag(10nm) is 1.6%, and the point of AsGeSeS(316nm)/Ag(20nm) is3.2%. Comparing the highest point in each case, we conclude that there is a distinctive increase in diffraction efficiency according the effect on Ag doping.

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A Study of Phase-change Properties of Sb-doped Ag/Ge-Se-Te thin films (Sb-doped Ag/Ge-Se-Te 박막의 상변화 특성 연구)

  • Nam, Ki-Hyun;Jeong, Won-Kook;Park, Ju-Hyun;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.347-347
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    • 2010
  • In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.

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Electrical Resistance Characteristic of Ag/As-Ge-Se-S Thin film with Laser Irradiation (레이저 조사에 의한 Ag/As-Ge-Se-S 박막의 전기적 저항특성)

  • Koo, Yong-Woon;Kim, Jin-Hong;Koo, Sang-Mo;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.110-111
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    • 2006
  • In this paper, we investigated resistance characteristic of chalcogenide material for next generation ReRAM nonvolatile memory device with laser irradiation. A AES is used to test Ag doping ratio into a As-Ge-Se-S thin film. A sample resistance was observed in real time with He-Ne laser(632.8nm). As a result, resistance of thermal treated As-Ge-Se-S thin film was $500{\Omega}$ which is smaller than initial $1.3M{\Omega}$. A resistance of non-treated Ag/As-Ge-Se-S thin film was $200{\Omega}$ which is lower than $35M{\Omega}$.

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Ag 도핑된 Sbx(Ge-Se-Te)100-x 박막의 개선된 상변화 특성

  • Nam, Gi-Hyeon;Kim, Jang-Han;Jeong, Hong-Bae
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.181-182
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    • 2011
  • Phase-change materials can be cycled by exposure to laser beam, and as a function of the pulse intensity and duration, the laser beam triggers the switching from crystalline to amorphous phase and back. In other to progress better crystallization transition and amorphization long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10, 20 and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.

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Optical Properties of $Sb_2S_3$ and Ag Doped $Sb_2S_3$ Thin Films ($Sb_2S_3$ 박막과 Ag 도핑한 $Sb_2S_3$ 박막의 광학적인 특성)

  • Kim, Jong-Ki;Park, Jung-Il;Lee, Hyun-Yong;Lee, Young-Jong;Chung, Hong-Bay
    • Proceedings of the KIEE Conference
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    • pp.1959-1961
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    • 1999
  • We prepared the $Ag[100\AA])/Sb_2S_3[3000\AA]$ films using the thermal evaporator. The films were exposed by the blue-pass filtered mercury lamp and the polarized He-Ne laser. We have investigated the dependence of the induced optical energy with Ag-doping and have observed the transmittance variation near the optical absorption edge with the light source. It was shown that the energy gap of this thin film was largely changed by exposing He-Ne laser, the light source of the near energy gap of this thin film. It is because of the structural change from Ag-doping. It is investigated that the dissolution, the diffusion, and the field effect of the Ag thin film generate the Ag spatial distribution.

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