• Title, Summary, Keyword: Abrasives size

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A study on the friction force caused by abrasives in chemical mechanical polishing (CMP시 연마입자에 작용하는 마찰력에 관한 연구)

  • Kim, Goo-Youn;Kim, Hyoung-Jae;Park, Beom-Young;Jeong, Young-Suk;Jeong, Hae-Do
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.1312-1315
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    • 2004
  • Chemical Mechanical Polishing is referred to as a three body tribological system, because it includes two solids in relative motion and the slurry. On the assumption that the abrasives between the pad and the wafer could be a major reason of not only the friction force but also material removal during polishing. The friction force generated by the abrasives was inspected with the change of abrasive size and concentration in this paper. The variation of coefficient of friction with abrasive concentration and size could result from the condition of contact and load balance between wafer and abrasives carried by pad asperity. The simulation was performed in this paper and compared with the result of experiment. The material removal rate also estimated with abrasive concentration and size increasement.

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Effect of Abrasive Particles on Frictional Force and Abrasion in Chemical Mechanical Polishing(CMP) (CMP 연마입자의 마찰력과 연마율에 관한 영향)

  • Kim, Goo-Youn;Kim, Hyoung-Jae;Park, Boum-Young;Lee, Hyun-Seop;Park, Ki-Hyun;Jeong, Hae-Do
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.10
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    • pp.1049-1055
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    • 2004
  • Chemical Mechanical Polishing (CMP) is referred to as a three body tribological system, because it includes two solids in relative motion and the CMP slurry. On the assumption that the abrasives between the pad and the wafer could be a major reason not only for the friction force but also for material removal during polishing, the friction force generated during CMP process was investigated with the change of abrasive size and concentration of CMP slurry. The threshold point of average coefficient of friction (COF) with increase in abrasives concentration during interlayer dielectric (ILD) CMP was found experimentally and verified mathematically based on contact mechanics. The predictable models, Mode I (wafer is in contact with abrasives and pad) and Mode II (wafer is in contact with abrasives only), were proposed and used to explain the threshold point. The average COF value increased in the low abrasives concentration region which might be explained by Mode I. In contrast the average COF value decreased at high abrasives concentration which might be regarded to as Mode II. The threshold point observed seemed to be due to the transition from Mode I to Mode II. The tendency of threshold point with the variation of abrasive size was studied. The increase of particle radius could cause contact status to reach transition area faster. The correlation between COF and material removal rate was also investigated from the tribological and energetic point of view. Due to the energy loss by vibration of polishing equipment, COF value is not proportional to the material removal rate in this experiment.

The Effect of Abrasive particles on Brake Performance (자동차 제동특성에 미치는 연마제의 영향에 관한 연구)

  • Hong, Young-Suk;Jang, Ho
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • pp.332-340
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    • 2000
  • Friction properties of automotive brake pads containing different types of abrasivess were investigated. Five different abrasives, including o-quartz, magnesia, magnetite, alumina, zircon, were employed in this investigation and size effects of the abrasives on friction characteristics were also studied using 1, 50, 140$\mu\textrm{m}$ size zircon. Experimental results showed that the hardness and size of these abrasive particles were strongly related to friction behaviors and wear mechanisms. Harder and smaller abrasives showed higher friction coefficient and more wear. The surfaces of friction materials with different sizes of abrasives showed that two different modes of abrasion (two-body and three-body abrasion) appeared during sliding. Considering the above results, abrasive materials were thought to destroy transfer film and the extent of the destruction depends on the types and sizes of abrasive particles. A mechanism of the wear mode transition (two-body to three body abrasive motion) was suggested considering the binding energy and friction energy in terms of abrasive particle size.

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Study on Effect of Particle Size of Ferrous Iron and Polishing Abrasive on Surface Quality Improvement (자기연마가공에서 자성입자와 연마재의 크기에 따른 표면개선 효과)

  • Lee, Sung-Ho;Son, Byung-Hun;Kwak, Jae-Seob
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.38 no.9
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    • pp.1013-1018
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    • 2014
  • Magnetic Abrasive Polishing (MAP) process is a nontraditional method for polishing the surface of workpiece by using the flexibility of tool. At present, a mixture of polishing abrasives and ferrous particles is used as the tool in the MAP process. Previously, an experiment was conducted with different sizes of polishing abrasives with an aim to improve the polishing accuracy. However, the sizes of ferrous particles are also expected to have a dominant effect on the process, warranting a study on the effect of the size of ferrous iron particles. In this study, an experiment was conducted using three different sizes of ferrous particles. Iron powder of average diameters 8, 78 and $250{\mu}m$ was used as ferrous particles. The effect of each ferrous particle size was evaluated by comparing the improvements in surface roughness. The particle size of a ferrous iron was found to play a significant role in MAP and particles of $78{\mu}m$ facilitated the best improvement in surface roughness.

Dependency of Planarization Efficiency on Crystal Characteristic of Abrasives in Nano Ceria Slurry for Shallow Trench Isolation Chemical Mechanical Polishing (STI CMP용 나노 세리아 슬러리에서 연마입자의 결정특성에 따른 평탄화 효율의 의존성)

  • Kang, Hyun-Goo;Takeo Katoh;Kim, Sung-Jun;Ungyu Paik;Park, Jea-Gun
    • Proceedings of the Materials Research Society of Korea Conference
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    • pp.65-65
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    • 2003
  • Chemical mechanical polishing (CMP) is one of the most important processes in recent ULSI (Ultra Large Scale Integrated Circuit) manufacturing technology. Recently, ceria slurries with surfactant have recently been used in STI-CMP,[1] became they have high oxide-to-nitride removal selectivity and widen the processing margin The role of the abrasives, however, on the effect of planarization on STI-CMP is not yet clear. In this study, we investigated how the crystal characteristic affects the planarization efficiency of wafer surface with controlling crystallite size and poly crystalline abrasive size independently.

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Evaluation of Point-Of-Use (POU) Filters Performance in Chemical Mechanical Polishing Slurry Supply System (슬러리 공급 시스템을 이용한 화학적 기계적 연마 공정에서의 POU 필터의 성능 평가)

  • Jang, Sunjae;Kim, Hojoong;Jin, Hongi;Nam, Miyeon;Kulkarni, Atul;Kim, Taesung
    • Particle and aerosol research
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    • v.9 no.4
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    • pp.261-269
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    • 2013
  • The chemical mechanical polishing (CMP) process is widely used in semiconductor manufacturing process for planarization of various materials and structures. Point-of-use (POU) filters are used in most of the CMP processes in order to reduce the unwanted micro-scratches which may result in defects. The performance of the POU filter is depends on type and size of the abrasives used during cleaning process. For this reason, there is a need to evaluate POU filters for their filtration efficiency (FE) with different types of abrasives. In this study, we developed filter test system to evaluate the FE of POU using ceria and silica abrasives (slurry). The POU filter is roll type capsule filter with retention size of 0.2 ${\mu}m$. Two POU filters of different make are evaluated for FE. We observed that both POU filters show similar filtration efficiency for silica and ceria slurry. Results reveal that the ceria slurry and the colloidal silica particle are removed not only by mechanical way but also hydrodynamic and electrostatic interaction way.

A Study on the Recycling of Silica Slurry Abrasives by Filtering (필터링에 의한 실리카 슬러리 연마제의 재활용에 관한 연구)

  • Seo Yong-Jin;Park Sung-Woo;Lee Woo-Sun
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.11
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    • pp.551-555
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    • 2004
  • In this paper, in order to reduce the high COO (cost of ownership) and COC (cost of consumables), we have collected the silica abrasive powders by filtering method after subsequent CMP (chemical mechanical polishing) process for the purpose of abrasives recycling. And then, we have studied the possibility of recycle of reused silica abrasive through the analysis of particle size distribution and FE-SEM (field emission-scanning electron microscope) measurements of abrasive powders. It was annealed the collected abrasive powders to promote the mechanical strength of reduced abrasion force. Finally, we compared the CMP characteristics between self-developed KOH-based silica abrasive slurry and original slurry. As our experimental results, we obtained the comparable rate of removal and good planarity with commercial products. Consequently we can expect the saving of high cost slurry.

Magnetic Abrasive Polishing and Its Application (초정밀 자기연마 가공 기술과 최근 연구)

  • Kwak, Tae-Soo;Kwak, Jae-Seob
    • Journal of the Korean Society for Precision Engineering
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    • v.29 no.3
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    • pp.266-272
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    • 2012
  • This paper has aims to share fundamental knowledge for magnetic abrasive polishing and to mainly introduce recent research results. In order to enhance a magnetic flux density for nonferrous materials, advanced magnetic abrasive polishing system which is called 2nd generation system was established by electro-magnet array table, and the effectiveness of the electromagnet array table was evaluated in real polishing experiments. To increase adhesiveness of the abrasives in high speed polishing, a silicone gel agent was proposed and carbon nanotube particles as new magnetic abrasives were applied in the magnetic abrasive polishing. In addition, a strategy for optimal step-over determination by heuristic algorithm was introduced for applying large size workpiece. Curved surfaces having a uniform radius were simulated and tested with installed electro-magnet array table.

A Study on the effect of TEOS film by Dispel8ion Time and Content of $CeO_2$ Abrasive (DSS에서 $CeO_2$ 연마제의 첨가량과 분산시간이 TEOS 막에 미치는 특성연구)

  • Seo, Yong-Jin;Han, Sang-Jun;Park, Sung-Woo;Lee, Young-Kyun;Lee, Sung-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.487-487
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    • 2009
  • One of the critical consumables in chemical mechanical polishing (CMP) is a specialized solution or slurry, which typically contains both abrasives and chemicals acting together to planarize films. In single abrasive slurry (SAS), the solid phase consists of only one type of abrasive particle. On the other hand, mixed abrasive slurry (MAS) consists of a mixture of at least two types of abrasive particles. In this paper, we have studied the CMP characteristics of mixed abrasive slurry (MAS) retreated by adding of $CeO_2$ abrasives within 1:10 diluted silica slurry (DSS). The slurry designed for optimal performance should produce reasonable removal rates, acceptable polishing selectivity with respect to the underlying layer, low surface defects after polishing, and good slurry stability. The modified abrasives in MAS are evaluated with respect to their particle size distribution, surface morphology, and CMP performances such as removal rate and non-uniformity. As an experimental result, we obtained the comparable slurry characteristics compared with original silica slurry in the viewpoint of high removal rate and low non-uniformity.

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Evaluation of Al CMP Slurry based on Abrasives for Next Generation Metal Line Fabrication (연마제 특성에 따른 차세대 금속배선용 Al CMP (chemical mechanical planarization) 슬러리 평가)

  • Cha, Nam-Goo;Kang, Young-Jae;Kim, In-Kwon;Kim, Kyu-Chae;Park, Jin-Goo
    • Korean Journal of Materials Research
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    • v.16 no.12
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    • pp.731-738
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    • 2006
  • It is seriously considered using Al CMP (chemical mechanical planarization) process for the next generation 45 nm Al wiring process. Al CMP is known that it has a possibility of reducing process time and steps comparing with conventional RIE (reactive ion etching) method. Also, it is more cost effective than Cu CMP and better electrical conductivity than W via process. In this study, we investigated 4 different kinds of slurries based on abrasives for reducing scratches which contributed to make defects in Al CMP. The abrasives used in this experiment were alumina, fumed silica, alkaline colloidal silica, and acidic colloidal silica. Al CMP process was conducted as functions of abrasive contents, $H_3PO_4$ contents and pressures to find out the optimized parameters and conditions. Al removal rates were slowed over 2 wt% of slurry contents in all types of slurries. The removal rates of alumina and fumed silica slurries were increased by phosphoric acid but acidic colloidal slurry was slightly increased at 2 vol% and soon decreased. The excessive addition of phosphoric acid affected the particle size distributions and increased scratches. Polishing pressure increased not only the removal rate but also the surface scratches. Acidic colloidal silica slurry showed the highest removal rate and the lowest roughness values among the 4 different slurry types.