• Title, Summary, Keyword: AC Etching

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Growth of Etch Pits on Aluminium Cathode Film (알루미늄 음극박의 에치 피트 성장)

  • Kim, Hong-Il;Kim, Sung-Han;Kim, Young-Sam;Shin, Jin-Sik;Park, Soo-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.338-339
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    • 2005
  • The wider surface of the aluminum foil, electrochemically very important and it is necessary to increase the surface area. A study has been made of the fabrication condition for etching cube texture of high purity aluminium foil and of electrochemical etching of the aluminium foil. In the present work, it is shown there exists a relation between the influence of the pre-treatment time in the NaOH & HCI solution and $H_2SO_4$ concentration in the conversion solution. Also effect of temperature during AC etching was also studied. Result of the etched aluminum film is shown in the typical SEM images. Its electrochemical characteristics were investigated by cyclic voltammetry. And effects of current density and frequency is also reported. Cyclic voltammogram showed that the protective oxide film was formedon the inner surfaces of etch pit. the frequency influence resistance of oxide film in AC etching.

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Etch Pit Growth on Aluminum of Cathode Film for Aluminum Electrolytic Capacitor (알루미늄 전해 커패시터용 음극박의 에칭 피트 성장)

  • Kim, Hong-Il;Choi, Ho-Gil;Kim, Sung-Han;Kim, Young-Sam;Shin, Jin-Sik;Park, Soo-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.407-408
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    • 2005
  • High surface area electrodes for aluminum electrolytic capacitors are produced by AC electrochemical processes. Optimization of crystallographic etch pit growth on aluminium during AC etching of cathode film for aluminium as electrolytic capacitor has been established. In this work, we present the observations of pit distributions by galvanostatic measurements. The effects of electrolyte concentration, current density, frequency, various pre-treatments and etching time have been studied. The specimen was pretreated in 0.5M NaOH and 1M HCl at $40\sim60^{\circ}C$, and transferred into a cell containing 1M HCl, then various mol $H_2SO_4$ etchant was added. Pit size distributions were determined with scanning electron microscopy (SEM).

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Effect of Sulfuric Acid Addition on the Aluminum AC Etching in HCl Solution (염산용액내에 황산 첨가에 의한 알루미늄의 교류에칭 특성)

  • Kim, Hangyoung;Choi, Jinsub;Tak, Yongsug
    • Applied Chemistry for Engineering
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    • v.9 no.4
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    • pp.463-468
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    • 1998
  • When sulfuric acid was added in HCl etching solution, corrosion of aluminum metal was inhibited by the chemical adsorption of sulfate ions. In the presence of $SO_4^{-2}$, cyclic voltammetry showed that the protective oxide film was formed on the inner surfaces of etch pits and, pit density was increased by nucleation on both the aluminum surface and the pits inside. Structure and distribution of etch pits found in AC etching of aluminum were strongly influenced by the concentration of $SO_4^{-2}$ and the amount of cathodic pulse charging. Below $0.8mC/cm^2$ of cathodic pulse charging, oxide films formed inside actively dissolving pits indicated the higher resistance to pit nucleation as the concentration of $SO_4^{-2}$ increases. However, the structural change of oxide films occurred above the $0.8mC/cm^2$ charging and the effect of $SO_4^{-2}$ was minimized, and it resulted in the rapid formation of etch pits.

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Effect of Aluminum Fence-type electrode Design on Characteristics of AC-PDP

  • Lee, Seog-Young;Lee, Dong-Heon;Kim, Yong-Seog
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.408-411
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    • 2008
  • In an attempt to enhance luminance efficiency and to reduce discharge delays of test panels with aluminum fence-electrodes, various designs of the electrodes were prepared by chemically etching the aluminum foils bonded to soda-lime glass substrate via anodic bonding process. The effects of fence design on luminance and discharge characteristics were investigated and compared with conventional ac-PDPs. These results showed a possibility of using fence-type aluminum electrode at front plates of ac-PDDs without sacrificing its performance.

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Hot AC Anodising as a Cr(VI)-free Pre-treatment for Structural Bonding of Aluminium

  • Lapique, Fabrice;Bjorgum, Astrid;Johnsen, Bernt;Walmsley, John
    • Journal of Adhesion and Interface
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    • v.4 no.2
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    • pp.21-29
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    • 2003
  • Hot AC anodising has been evaluated us pre-treatment for aluminium prior to structural adhesive bonding. Phosphoric and sulphuric acid hot AC anodising showed very promising adhesion promoter capabilities with durability comparable with the best standard DC anodising procedures. AC anodising does not required etching prior to anodising and offers u pre-treatment time down to 20 seconds. The interface/interphase between the aluminium substrate and the adhesive was investigated in order to get a better understanding of the involved adhesion mechanisms and to explain the long-tenn properties. The alkaline medium formed at the oxide layer/adhesive interface has been shown to induce a partial dissolution of the oxide layer leading to the formation of metallic ions which diffuse in the adhesive (EPMA measurements). The effect of diffusion of the Al ions on adhesion and joint durability is still uncertain but studies showed that pre-bond moisture affected the joints durability and to some extent the diffusion length. specially for DC anodised samples. So far no direct correlation could be established between the diffusion length d and the joints durability but new trials with better control over the elapsed time between bonding and adhesive curing are expected to help getting a better understanding of the involved mechanisms.

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$SiO_2$ Etching in $C_4F_{8}$ Plasma by E-ICP ($C_4F_{8}O_2$ 공정기체와 E-ICP를 이용한 산화막 식각)

  • 송호영;조수범;이종근;오범환;박세근
    • Proceedings of the IEEK Conference
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    • pp.197-200
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    • 2001
  • Novel Enhanced Inductively Coupled Plasma is applied to etch $SiO_2$. Effect of $O_2$ or Ar addition to $C_{4}F_{8}$ gas is monitored by Optical Emission Spectroscopy and Quadrupole Mass Spectrometer. It is fund that Ar or $O_2$ dilution to $C_{4}F_{8}$ increases F emission intensity and decreases $CF_2$ intensity. However, the ac frequency to the Helmholtz coil decreases the F intensity and thus increases $CF_2$/F ratio. By adjusting the ac frequency, the optimum etch rate and PR to $SiO_2$ selectivity can be obtained in E-lCP.

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Fabrication of Aluminum Powder Disk by a Template Method and Its Etching Condition for an Electrode of Hybrid Supercapacitor (Template 방법을 이용한 Hybrid Supercapacitor 전극용 알루미늄 분말 디스크 제조와 에칭 조건 연구)

  • Jin, Chang-Soo;Lee, Yong-Sung;Shin, Kyung-Hee;Kim, Jong-Huy;Yoon, Soon-Gil
    • Journal of the Korean Electrochemical Society
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    • v.6 no.2
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    • pp.145-152
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    • 2003
  • Capacitance of a hybrid capacitor that has characteristics of both electrolyte capacitor and supercapacitor is determined by anode surface covered with oxide layer. In this study, optimal condition processes for anode to fabricate a high voltage hybrid capacitor was investigated. We mixed aluminum powder having mean particle size of $40{\mu}m$ with NaCl powders at weight ratio of 4 : 1 and prepared a disk type electrode after annealing at various temperature. After dissolving NaCl in $50^{\circ}C$ distilled water, heat treatment, eletropolishing, chemical treatment, and the first and the second etching of Al disk were conducted. In each process, capacitances and resistances of the disk measured by ac-impedance analyzer were compared to find its optimum treatment condition. Also, the surface morphology of treated disks were observed and compared by SEM. After the second etching, the Al disk was anodized at 365V to make an anode of hybrid supercapacitor that can be operated at 300V, Capacitance and resistance of the anodized Al disk electrode was compared with those of commercialized conventional aluminum electrolytic capacitor at different frequencies.

Asymmetric Flows for Porous Silicon Electroosmotic Pumps (다공성 실리콘막을 포함한 전기침투 방식 펌프에서의 비대칭적 인 유동)

  • Kim, Dae-Joong;Santiago, Juan G.
    • 한국전산유체공학회:학술대회논문집
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    • pp.703-704
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    • 2008
  • We fabricated and tested porous silicon-based electroosmotic pumps. Compared to other pumping media, porous silicon is beneficial for obtaining comparable flow rates with much lowered electric potential, while maintaining enough mechanical properties. We fabricated porous silicon with two sided-reactive etching processes. We found higher flow rate per electric potential (consistent with previous studies) and we also found asymmetric flow rates for different pumping directions. We plan to utilize this asymmetry for AC pumping applications.

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