• Title, Summary, Keyword: 대향타겟스퍼터링

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Preparation of Co-Cr Thin Films by Facing Targets Sputtering (대향타겟스퍼터링에 의한 Co-Cr 박막의 제작)

  • ;;;;;S. Nakagawa;M.Naoe
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.5
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    • pp.418-422
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    • 1998
  • The Co-Cr films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) system has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrate. In this study, we investigated the possibility of employing FTS system for depositing Co-Cr films. The Co-Cr thin films were deposited with various sputter gas pressure($P_Ar$, 0.1~10mTorr) by using FTS apparatus at temperature of $40^{\circ}C and 220^{\circ}C$, respectively. Crystallographic and magnetic characteristics were evaluated by x-ray diffractometry (XRD) and vibrating sample magnetometer(VSM), respectively. Under argon gas pressure at 0.1mTorr, films with morphologically dense microstructure, good c-axis orientation and higher coercivity were obtained. It has been confirmed that the FTS system is very useful for preparing Co-Cr thin film recording media.

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Medium frequency current sputtered face target aluminum zinc oxide transparent conductive film (대향타겟 스퍼터링법으로 증착한 AZO 투명전도성 필름)

  • Jang, Hye-Yeong;Choe, In-Gyu;Kim, Sang-Ho
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • pp.294-294
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    • 2015
  • 대향타겟식 스퍼터링법을 이용해 유연한 기판에 증착시켜 고주파 마그네트론 스퍼터링보다 덜 손상이 입히도록 증착 시켰으며, 플라즈마 주파수를 다양하게 하여 밴딩테스트 후 나빠지는 전기적, 광학적 특성을 개선하고, 그 원인을 분석하였다.

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The Improvement of Magnetic Properties of CoCr Thin Film for Perpendicular Magnetic Recording Media (수직자기기록매체용 CoCr박막의 자기적 특성 개선에 관한 연구)

  • 공석현;손인환;최형욱;최동진;김경환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.419-422
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    • 1999
  • We prepared CoCr thin film for perpendicular magnetic recording media by facing targets sputtering system(FTS system) which can deposit a high quality thin films in plasma-free state and wide range of working pressure. In this study, we investigated that the effect of sputtering condition , that Argon gas pressure and substrate temperature, on magnetic and crystallographic characteristic of CoCr thin film as well as the variation perpendicular coercivity in changing of film's thickness. Crystallographic and magnetic characteristic of prepared thin films were evaluated by x-ray fractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement.

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Preparation of Co-Cr-Ta recording layers by FTS (FIS에 의한 Co-Cr-Ta 기록층의 제작)

  • 공석현;손인환;박창옥;김재환;김경환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.578-581
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    • 1999
  • The Co-Cr-Ta films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) system has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrates. In this study, we investigated the effect underlayers on the growths layers of Co-Cr-Ta recording layers. The Co-Cr-Ta/Ti(CoCr) double layers were deposited with sputter gas pressure$(P_N, 0.3-1mTorr)$ by using FTS apparatus at temperature of$40^{\circ}C~-300^{\circ}C$, respectively. Crystallographic and magnetic characteristics were evaluated by x-ray diffractometry(XRD) and vibrating sample magnetometer(VSM), respectively.

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Crystal Orientation of Thin Films Prepared by Facing Targets Sputtering (대향타겟스퍼터링으로 제작된 박막의 결정 배향성)

  • 김경환;손인환;송기봉;신촌수양;중천무수;직강정언
    • Journal of the Korean institute of surface engineering
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    • v.31 no.4
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    • pp.217-222
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    • 1998
  • The Facing Targets Sputtering(FTS) system has several advantages for preparing films over a wide range of working gas pressure on plasma-free substrates. Co-Cr thin films seem to be one of the most promising media for perpendicular magnetic recording system. In this study, the capabillities of the system fordepositing C0-Cr films have been investigated. Under various Ar gas pressure, films with morphologically dense microstructure and good c-axis orientation were deposited, even when the incident angle $\psi_x$ of sputtered part icles to the film plane was below abount $50^{\circ}C$. this may imply that the shadowing effect by obique incidence of particle can be compensated by rapid surface diffusion owing to the high kinetic energy of particles arriving at the growing film. It has been confirmed that the FTS system is very useful for perparing Co-Cr thin films recorging media.

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The Improvement of Magnetic Properties of Co-Cr Thin Film for Perpendicular Magnetic Recording Media (수직자기기록매체용 Co-Cr 박막의 자기적 특성 개선에 관한 연구)

  • 공석현;금민종;최형욱;최동진;김경환;손인환
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.5
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    • pp.444-450
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    • 2000
  • We prepared Co-Cr thin film for perpendicular magnetic recording media with facing targets sputtering system(FTS system) which can deposit a high quality thin film in plasma-free state and wide range of working pressure. The effect of sputtering conditions(argon gas pressure and substrate temperature) on the magnetic and the crystallographic characteristic of Co-Cr thin film was investigated. And the variation of perpendicular coercivity with the variation of film thickness was studied. As a result we obtained the high perpendicular coercivity of 1900Oe and the good dispersion angle of c-axis($\Delta$$\theta$$_{50}$) of 5$^{\circ}$on the film thickness of 100nm for the promising recording layer of perpendicular magnetic recording media.c recording media.a.

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A Study of the Crystallographic Characteristic of ZnO Thin Film Grown on ZnO Buffer Layer (ZnO Buffer Layer에 의한 ZnO 박막의 결정학적 특성에 관한 연구)

  • 금민종;손인환;이정석;신성권;김경환
    • Journal of the Korean Vacuum Society
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    • v.12 no.4
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    • pp.214-217
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    • 2003
  • In this study, we prepared ZnO thin film on $SiO_2$/Si substrate by FTS (Facing Targets Sputtering) apparatus which can reduce damage on the thin film because the bombardment of high-energy Particles such as ${\gamma}$-electron can be restrained. And, properties of thin filnl grown with ZnO buffer-layer which can be suppress initial growth layer was investigated. The crystalline and the c-axis preferred orientation of ZnO thin film was also investigated by XRD. As a result, we noticed that the ZnO thin film has a good crystallographic characteristic at thickness of ZnO buffer layer 10, 20 nm and working pressure 1 mTorr.

Crystallographic characteristics of ZnO thin films prepared by Facing Targets Sputtering system (대향타겟스퍼터링장치에의해 증착된 ZnO 박막의 결정학적 특성)

  • Keum, M.J.;Sung, H.Y.;Kong, S.H.;Son, I.H.;Kim, K.H.
    • Proceedings of the KIEE Conference
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    • pp.854-856
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    • 1999
  • We prepared ZnO thin film with Facing Targets Sputtering system that can deposit thin film in plasma-free situation and change the deposition condition in wide range. And prepared thin film's c-axis orientation and grain size were analyzed by XRD(x-ray diffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.

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Discharge Characteristics of Facing Targets Sputtering Apparatus with Targets Species (타켓 종류에 따른 대향타겟 스퍼터링 장치의 방전 특성)

  • Keum, Min-Jong;Son, In-Hwan;Shin, Sung-Kwan;Ga, Ch-Hyun;Park, Yong-Seo;Kim, Kyung-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.620-623
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    • 2004
  • In this study, the discharge characteristic of FTS (Facing Targets Sputtering) apparatus was investigated using metal target paramagnetic and ceramic targets such as Zn, Al, $ZnO:Al(Al_2O_3)$, ITO. Threshold voltage and stable stage of discharge show different with target species. Compare with commercial sputtering apparatus, the FTS apparatus is a high-speed sputter method that promotes ionization of sputter gas by screw and reciprocate moving high-speed ${\gamma}$electrons which arrays two targets facing each other, inserts plasma arresting magnetic field to the parallel direction of the center axis of both targets, discharged from targets and accelerated at the cathode falling area. Especially, we notice that the FTS method using ceramic target has stable discharge characteristic even by DC power source.

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