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Analysis of the Na Gettering in SiO2/PSG/SiO2/Al-1%Si and SiO2/TEOS/SiO2/Al-1%Si Multilevel Thin Films using SIMS (SIMS를 이용한 SiO2/PSG/SiO2/Al-1%Si 및 SiO2/TEOS/SiO2/Al-1%Si 적층 박막내의 Na 게터링 분석)

  • Kim, Jin Young
    • Journal of the Korean institute of surface engineering
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    • v.51 no.2
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    • pp.110-115
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    • 2018
  • The Na low temperature gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films was investigated using dynamic SIMS(secondary ion mass spectrometry) analysis. DC magnetron sputter, APCVD and PECVD techniques were utilized for the deposition of Al-1%Si thin films, $SiO_2/PSG/SiO_2$ and $SiO_2/TEOS/SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of Na, Al, Si and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze chemical states of Si and O elements in $SiO_2$ passivation layers. Na peaks were observed throughout the $PSG/SiO_2$ and $TEOS/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the interfaces. Na low temperature gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering.

The Fabrication and Characteristic for Narrow-band Pass Color-filter Deposited by Ti3O5/SiO2 Multilayer (Ti3O5/SiO2 다층박막를 이용한 협대역 칼라투과필터 제작 및 특성연구)

  • Park, Moon-Chan;Ko, Kyun-Chae;Lee, Wha-Ja
    • Journal of Korean Ophthalmic Optics Society
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    • v.16 no.4
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    • pp.357-362
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    • 2011
  • Purpose: The narrow-band pass color-filters with a 500 nm central wavelength and 12 nm FWHM using $Ti_3O_5/SiO_2$ mutilayer were fabricated, and their characteristics and structures were studied. Methods: the optical constants, n and k, of the $Ti_3O_5$ and $SiO_2$ thin films were obtained from the transmittances of their thin film. The narrow-band pass color-filters were designed with these optical constants and the AR coating of the filter was also designed. $Ti_3O_5/SiO_2$ multilayer filters were made by electron beam evaporation apparatus and the transmittaces of the filters were measured by spectrophotometer. the number of layers and the thicknesses of filters were calculated from the cross section of filters by SEM image and the composition of filters was analysed by XPS analysis. Results: The optimization of AR coating for the narrow-band pass color-filter was [air$|SiO_2(90)|Ti_3O_5(36)|SiO_2(5)|Ti_3O_5(73)|SiO_2(30)|Ti_3O_5(15)|$ glass], and the optimization of filter layer for the color filter was [air$|SiO_2(192)|Ti_3O_5(64)|SiO_2(102)|Ti_3O_5(66)|SiO_2(112)|Ti_3O_5(74)|SiO_2(120)|Ti_3O_5(68)|SiO_2(123)|Ti_3O_5(80)|SiO_2(109)|Ti_3O_5(70)|SiO_2(105)|Ti_3O_5(62)|SiO_2(99)|Ti_3O_5(63)|SiO_2(98)|Ti_3O_5(51)|SiO_2(60)|Ti_3O_5(42)|SiO_2(113)|Ti_3O_5(88)|SiO_2(116)|Ti_3O_5(68)|SiO_2(89)|Ti_3O_5(49)|SiO_2(77)|Ti_3O_5(48)|SiO_2(84)|Ti_3O_5(51)|SiO_2(85)|Ti_3O_5(48)|SiO_2(59)|Ti_3O_5(34)|SiO_2(71)|Ti_3O_5(44)|SiO_2(65)|Ti_3O_5(45)|SiO_2(81)|Ti_3O_5(52)|SiO_2(88)|$ glass]. It was known that the color-filters fabricated by the simulation data were composed of 41 layers by SEM image and the top layer of filters was $SiO_2$ layer and the filters were composed of $SiO_2$/$Ti_3O_5$ multilayer by XPS analysis. It was also known that the mixed thin film of TiO2 and $Ti_3O_5$ was made during the deposition of the $Ti_3O_5$ material. Conclusions: The narrow-band pass color-filters with a 500 nm central wavelength and 12 nm FWHM using $Ti_3O_5/SiO_2$ mutilayer of 41 layer were fabricated, and it was known that the mixed form of TiO2 and $Ti_3O_5$ thin film was made during the deposition of the $Ti_3O_5$ material.

Analysis of the K Gettering in SiO2/PSG/SiO2/Al-1%Si Multilevel Thin Films using SIMS (SIMS를 이용한 SiO2/PSG/SiO2/Al-1%Si 적층 박막내의 K 게터링 분석)

  • Kim, Jin Young
    • Journal of the Korean institute of surface engineering
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    • v.50 no.3
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    • pp.219-224
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    • 2017
  • The K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films was investigated using SIMS(secondary ion mass spectrometry) and XPS(X-ray Photoelectron Spectroscopy) analysis. DC magnetron sputter techniques and APCVD(atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and $SiO_2/PSG/SiO_2$ passivations, respectively. Heat treatment was carried out at $400^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of K, Al, Si, P and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze binding energies of Si and P elements in PSG passivation layers. K peaks were observed throughout the $PSG/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the $PSG/SiO_2$ interfaces. K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and P elements in PSG passivation appears to be $SiO_2$ and $P_2O_5$, respectively

Room Temperature Strength and Crack Healing Morphology of Si3N4 Composite Ceramics with SiO2 Colloidal (SiO2 콜로이달에 의한 Si3N4 복합 세라믹스의 상온굽힘강도 및 균열치유 현상)

  • Nam, K.W.;Kim, J.S.;Lee, H.B.
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.33 no.7
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    • pp.652-657
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    • 2009
  • Strength characteristics of $Si_3N_4$ composite ceramics has been studied as functions of heat-treatment temperature and additive $SiO_2$. $SiO_2$ colloidal could significantly increase the bending strength. Crack healing temperature decreased 300 K by additive $TiO_2$. Bending strength of specimen added $SiO_2$ is higher than that of non-added $SiO_2$. Moreover, bending strength of specimen with $SiO_2$ colloidal coating is much higher that of non-coated specimen. In in-situ observation, crack-healed specimen at 1,573 K shows phenomenon like a fog on the surface. By SPM, both crack-healed specimen, non-coating and coating of $SiO_2$ colloidal, at 1,273 K were healed completely but both of 1,573 K exist crack. This was made by evaporation of $SiO_2$ at high temperature. Crack-healing materials of $Si_3N_4$ composite ceramics is crystallized $Y_2Si_2O_7$, $Y_2Ti_2O_7$ and $SiO_2$. A large amount of Si and O, and little C were detected by EPMA. Si and O increase but C decreases according to heat treatment temperature. Specimens with additive $SiO_2$ were more detected Si and O than that of non-additive $SiO_2$. Specimen with $SiO_2$ colloidal coatings were much more detected O.

Analysis and Design of half-mirror coating for sunglasses (썬글라스용 반미러(Half-Mirror) 코팅의 분석과 설계)

  • Park, Moon-Chan;Jung, Boo-Young;Hwangbo, Chang-Kwon
    • Journal of Korean Ophthalmic Optics Society
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    • v.8 no.2
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    • pp.111-117
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    • 2003
  • We collected the domestic and foreign half-mirror coating lens for sunglasses. Their reflectance is measured using Spectrophotometer in order to analysis their optical property and the result which is calculated using Macleod program was compared with measured reflectance. In addition, we designed the new half-mirror coating lens with gold color using TiN material and investigated the optical property of the new half-mirror coating lens. The results obtained from analysis of half-mirror coating lenses are as follow : Two-tone half-mirror coating with silver color is fabricated with [air|$SiO_2$(or $Al_2O_3$)|Cr|glass]. The role of $SiO_2$(or $Al_2O_3$) on Cr improve the hardness of the lens and the thickness of the $Al_2O_3$ with 10 nm is good to show the lens silver color. Incase of color half-mirror coating lens. Blue system is designed by [air|$SiO_2$(66.3)|$TiO_2$(129.0)|$SiO_2$(62.9)|$SiO_2$(26.0)|$TiO_2$(120.3)|$SiO_2$(9.1)|glass], gold system [air|$SiO_2$(60.6)|$TiO_2$(86.2)|$SiO_2$(13.5)|$TiO_2$(86.8)|$SiO_2$(214.38)|glass], green system[air|$SiO_2$(74.3)|$TiO_2$(75.8)|$SiO_2$(44.3)|$TiO_2$(11.6)|$SiO_2$(160.8)|$TiO_2$(12.9)|$SiO_2$(183.3)|$TiO_2$(143.8)|glass], silver system[air|$SiO_2$(21.2)|$TiO_2$(49.7)|$SiO_2$(149.3)|glass]. White half-mirror coating lens has [air|$SiO_2$(17 nm)|$TiO_2$(43 nm)(or $ZrO_2$)|$SiO_2$(87 nm)|polysiloxane($4.46{\mu}m$|glass or CR-19]. It has half-mirror coaling lens which has about 19% reflectance and about 80% transmittance in the range of visible light(400~700nm). we designed the new half-mirror coating lens with gold color, the (x, y) value of the CIE is almost similar to the CIE value of [air|$SiO_2$(170 nm)|TiN(15 nm)|glass].

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Sintering Behavior of Zircon with SiO2 (Silica가 첨가된 지르콘 소결거동)

  • Lee, Keun-Bong;Kang, Jong-Bong
    • Korean Journal of Materials Research
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    • v.18 no.11
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    • pp.604-609
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    • 2008
  • The sintering behavior of zircon with silica was investigated. Zircon with 5 vol% of sedimentation $SiO_2$ resulted in the apparent density of $4.45\;g/cm^3$, the diametral tensile strength of $12.125\;kgf/cm^2$, and the micro Vickers hardness of 1283 HV. The dissociation temperature and mechanical characteristics of the $ZrSiO_4$ were changed with different kinds of $SiO_2$. $SiO_2$ addition prevented dissociation of $ZrSiO_4$. Zircon with 5 vol% of sedimentation $SiO_2$ and with 5 vol% of fused $SiO_2$ resulted in increased diametral tensile strength and increased micro Vickers hardness by suppression of $ZrSiO_4$ dissociation and low temperature liquid $SiO_2$ formation. Zircon with fumed $SiO_2$ and quartz $SiO_2$ resulted in decreased diametral tensile strength and decreased micro Vickers hardness because of cristobalite and quartz phase formation and high temperature liquid $SiO_2$ formation. Zircon with 10 vol% of $SiO_2$ resulted in decreased diametral tensile strength and decreased micro Vickers hardness because of weak particle coupling due to excess formation of liquid $SiO_2$.

Microstructural Changes of $SiO_2-Si$ During Liquid-Phase Sintering (액상소결단계에서 $SiO_2-Si$의 미세조직 변화)

  • 강대갑;정충환
    • Journal of the Korean Ceramic Society
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    • v.31 no.4
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    • pp.443-447
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    • 1994
  • Compacts of mixed SiO2-Si powder were liquid phase sintered at 145$0^{\circ}C$ for up to 60 min in a hydrogen atmosphere. In contrast to the conventional microstructures of liquid phase sintered materials, the specimens showed that the solid phase of SiO2 formed a matrix while the liquid phase of Si was the dispersed in the solid matrix. The dispersion of liquid Si pockets was attributed to the high wetting angle of liquid Si on solid SiO2. Because of relatively high solubility of SiO2 in liquid Si at 145$0^{\circ}C$, SiO2 particles accommodated their shape via a solution-reprecipitation process. The liquid Si pockets grew by coalescing with their neighbour pockets. In the latter stage of the sintering, plate-shape grains appeared in the liquid Si pockets. The grains were SiO2 phase precipitated from the liquid Si which was oversaturated with oxygen during cooling to room temperature. By the formation and subsequent removal of the gaseous SiO phase due to the reaction between SiO2 and Si, the specimens became porous.

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Fabrication of $Al_2O_3/SiC$ Composite Through Oxidation of SiC (SiC의 산화에 의한 $Al_2O_3/SiC$ 복합체의 제조)

  • 김경환;이홍림;이형민;홍기곤
    • Journal of the Korean Ceramic Society
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    • v.34 no.5
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    • pp.535-543
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    • 1997
  • The surface of SiC particles were partially oxidized to produce SiO2 layers on the SiC particles to prepare Al2O3/SiC composite by formation of mullite bonds between the grains of Al2O3 and SiC during sintering at 1$600^{\circ}C$. This process is considered to enable the sintering of Al2O3/SiC composite at lower temperature and also to relieve the stress, produced by thermal expansion mismatch between Al2O3 and SiC. In fact, Al2O3/SiC composite prepared by oxidation of SiC was observed to be more effectively sintered and densified at lower temperature. Maximum density, flexural strength and microhardness were obtained with 5.65 vol% of mullite content in Al2O3/SiC composite.

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Fabrication of Core/Shell Structured SiO2/Zn2SiO4:Mn2+ Composite and Its Photoluminescence Properties

  • Park, Jehong;Kim, Jongsu;Kwon, Hansang
    • Journal of the Korean Physical Society
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    • v.71 no.7
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    • pp.370-373
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    • 2017
  • Core/shell structured $SiO_2/Zn_2SiO_4:Mn^{2+}$ composite was prepared by thermal-diffusion reaction between $SiO_2$ and $Zn_{1-x}Mn_xO$ particles, which is a low cost solid-state method. The X-ray diffraction and scanning electron microscope results showed that a $5-{\mu}m$-thick dense $Zn_2SiO_4:Mn^{2+}$ layer was successfully formed on the surface of the $SiO_2$ particles. The PL spectrum of the $SiO_2/Zn_2SiO_4:Mn^{2+}$ composite revealed a green emission peak at 526 nm with PL intensity 20% higher than that of the conventional $Zn_2SiO_4:Mn^{2+}$ particles. In addition, the decay time of the $SiO_2/Zn_2SiO_4:Mn^{2+}$ composite was shorter (${\tau}_{10%}=7ms$) than that of the conventional $Zn_2SiO_4:Mn^{2+}$ particles (${\tau}_{10%}=12ms$), which is owing to the relaxation of forbidden transition of $Mn^{2+}$ ions due to the localized stress of $Mn^{2+}$ ions arising from the surface tension in the $SiO_2/Zn_2SiO_4:Mn^{2+}$ composite.

Reactive RF Magnetron Sputtering에 의해 성장된 Si(100) 과 Si(111) 기판 위에 증착된 $CeO_2$ 박막의 구조적, 전기적 특성

  • 김진모;김이준;정동근
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.103-103
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    • 1999
  • CeO2 는 cubic 구조의 일종인 CeF2 구조를 가지며 격자 상수가 0.541nm로 Si의 격자 상수 0.543nm와 거의 비슷하여 Si과의 부정합도가 0.35%에 불과하여 CeO2를 Si 기판 위에 에피택셜하게 성장시킬 수 있는 가능성이 크다. 따라서 SOI(Silicon-On-Insulator) 구조의 실현을 위하여 Si 기판위에 CeO2를 에피택셜하게 성장시키려는 많은 노력이 있었다. 또한 CeO2 는 열 적으로 대단히 안정된 물질로서 금속/강유전체/반도체 전계효과 트랜지스터(MFSFET : metal-ferroelectric-semiconductor field effect transistor)에서 ferroelectric 박막과 Si 기판사이에 완충층으로 사용되어 강유전체의 구성 원자와 Si 원자들간의 상호 확산을 방지함으로써 경계면의 특성을 향상시기키 위해 사용된다. e-beam evaporation와 laser ablation에 의한 Si 기판 위의 CeO2 격자 성장에 관한 많은 보고서가 있다. 이 방법들은 대규모 생산 공정에서 사용하기 어려운 반면 RF-magnetron sputtering은 대규모 반도체 공정에 널리 쓰인다. Sputtering에 의한 Si 기판위의 CeO2 막의 성장에 관한 보고서의 수는 매우 적다. 이 논문에서는 Ce target을 사용한 reactive rf-magnetron sputtering에 의해 Si(100) 과 Si(111) 기판위에 성장된 CeO2 의 구조 및 전기적 특성을 보고하고자 한다. 주요한 증착 변수인 증착 power와 증착온도, Seed Layer Time이 성장막의 결정성에 미치는 영향을 XRD(X-Ray Diffractometry) 분석과 TED(Transmission Electron Diffration) 분석에 의해 연구하였고 CeO2 /Si 구조의 C-V(capacitance-voltage)특성을 분석함으로써 증차된 CeO2 막과 실리콘 기판과의 계면 특성을 연구하였다. CeO2 와 Si 사이의 계면을 TEM 측정에 의해 분석하였고, Ce와 O의 화학적 조성비를 RBS에 의해 측정하였다. Si(100) 기판위에 증착된 CeO2 는 $600^{\circ}C$ 낮은 증착률에서 seed layer를 하지 않은 조건에서 CeO2 (200) 방향으로 우선 성장하였으며, Si(111) 기판 위의 CeO2 박막은 40$0^{\circ}C$ 높은 증착률에서 seed layer를 2분이상 한 조건에서 CeO2 (111) 방향으로 우선 성장하였다. TEM 분석에서 CeO2 와 Si 기판사이에서 계면에서 얇은 SiO2층이 형성되었으며, TED 분석은 Si(100) 과 Si(111) 위에 증착한 CeO2 박막이 각각 우선 방향성을 가진 다결정임을 보여주었다. C-V 곡선에서 나타난 Hysteresis는 CeO2 박막과 Si 사이의 결함때문이라고 사료된다.

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