• Title, Summary, Keyword: $O_2$ plasma

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Effects of Plasma Spray Conditions on Photoelectric Properties of Plasma Sprayed $TiO_2$ Semiconductor ($TiO_2$ 반도체 용사피막의 광전극 특성에 미치는 용사조건의 영향)

  • 박정식;박경채
    • Journal of Welding and Joining
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    • v.12 no.1
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    • pp.94-101
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    • 1994
  • In this study, plasma spraying has been used to produce $TiO_2$ polycrystalline coatings from $TiO_2$ powders. The physical and chemical properties of plasma sprayed $TiO_2$ coatings depend greatly on plasma spraying conditions. The electrical resistivity, oxygen concentration, photocurrent and crystal structure of plasma sprayed $TiO_2$ coating has been studied. The results are as follows: 1. The oxygen loss and electrical conductivity of $TiO_2$ plasma sprayed coatings increased by low pressure and high amount of auxiliary gas, hydrogen in plasma spraying. 2. Oxygen loss increase electrical conductivity, and decrease photocurrent of $TiO_2$ plasma sprayed coatings. 3. Photocurrent of $TiO_2$ plasma sprayed coatings manufactured in atmospheric pressure is higher than that of low pressure.

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Measurement of Sputtering Yield of $RF-O_2$ Plasma treated MgO Thin Films ($RF-O_2$ Plasma 처리한 MgO 박막의 스퍼터링 수율 측정)

  • Jeong, W.H.;Jeong, K.W.;Lim, Y.C.;Oh, H.J.;Park, C.W.;Choi, E.H.;Seo, Y.H.;Kim, Y.K.;Kang, S.O.
    • Journal of the Korean Vacuum Society
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    • v.15 no.3
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    • pp.259-265
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    • 2006
  • We measured sputtering yield of RF $O_2-plasma$ treated MgO protective layer for AC-PDP(plasma display panel) using a Focused ion Beam System(FIB). A 10 kV acceleration voltage was applied. The sputtering yield of the untreated sample and the treated sample were 0.33 atoms/ion and 0.20 atoms/ion, respectively. The influence of the plasma-treatment of MgO thin film was characterized by XPS and AFM analysis. We observed that the binding energy of the O 1s spectra, the FWHM of O 1s spectra and the RMS(root-mean-square) of surface roughness decreased to 2.36 eV, 0.6167 eV and 0.32 nm, respectively.

ECR plasma pretreatment of the TiN films for $RuO_2$ MOCVD ($RuO_2$ MOCVD를 위한 TiN막의 ECR plasma 전처리)

  • 이종무;김대교;엄태종;홍현석
    • Proceedings of the Materials Research Society of Korea Conference
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    • pp.163-163
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    • 2003
  • TiN barrier막 위에 metal organic chemical deposition(MOCVD)법으로 RuO$_2$ 를 증착시 TiN막 표면을 세정처리하지 않을 경우 RuO$_2$의 핵생성이 어렵고, 그로 인해 RuO$_2$ 연속막이 형성되기 힘들다. 그러므로 RuO$_2$의 핵생성을 향상시키기 위해 TiN막에 대한 전처리 세정이 필수적이다. TiN막의 전처리 세정방법으로 ECR plasma 세정법을 사용하였으며, $O_2$ plasma와 H$_2$ plasma 그리고 Ai plasma를 이용해 각각의 exposure time을 변화시키며 전처리 세정을 실시하였다. H$_2$ plasma와Ar plasma의 exposure time이 증가됨에 따라 RuO$_2$의 핵생성이 향상되었다. 본 연구에서는 scanning electron microscopy(SEM), Auger electron emission spectrometry(AES), Atomic Force Microscope(AFM), X-ray diffraction (XRD) 등의 분석을 통해 TiN막 표면에 대한 ECR plasma 전처리 세정 이 RuO$_2$의 핵생성과 연속막 성장에 미치는 효과에 대해 조사하였다.

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Plasma treatments of indium tin oxide(ITO) anodes in argon/oxygen to improve the performance and morphological property of organic light-emitting diodes(OLED) ($O_2$ : Ar 혼합가스 플라즈마로 ITO표면 처리한 OLED의 동작특성 향상과 표면개질에 관한 연구)

  • Seo, Yu-Suk;Moon, Dae-Gyu;Jo, Nam-Ihn
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.67-68
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    • 2008
  • A simple bi-layer structure of organic light emitting diode (OLED) was used to study the characteristics of anode preparation. Indium tin oxide (ITO) anode surface treatment of OLEDs was performed to get the optimum condition for the ITO anode. The ITO surface was treated by $O_2$ or $O_2$ / Ar mixed gas plasma with different processing time. The electrical characteristics of OLED were improved by plasma treatment. The operating voltage of OLED with $O_2$ or $O_2$/Ar mixed gas plasma treated anodes decreases from 8.2 to 3.4 V and 3.2V, respectively. The $O_2$ /Ar mixed gas plasma treatment results in better electrical property.

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Etching Properties of $RuO_2$Thin Film in Inductively Coupled Plasma (ICP에 의한 $RuO_2$박막의 식각 특성)

  • 김창일;김동표
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.863-865
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    • 2001
  • In this study, RuO$_2$thin films were etched in inductively coupled $O_2$plasma. Etching characteristics of RuO$_2$thin films including etch rate and selectivity were evaluated as a function of rf power in $O_2$plasma and gas mixing ratio in $O_2$/Ar plasma. In $O_2$ plasma, the etch rate of RuO$_2$thin film increases as rf power increases. In $O_2$/Ar plasma, the etch rate of RuO$_2$thin film increases up to 10% Ar, but decrease with furthermore increasing Ar mixing ratio. The enhanced etch rate can be obtained with increasing rf power and small addition of Ar gas.

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Ion-induced secondary electron emission coefficient and work function for MgO thin film with $O_2$ plasma treatment

  • Jung, J.C.;Jeong, H.S.;Lee, J.H.;Oh, J.S.;Park, W.B.;Lim, J.Y.;Cho, J.W.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.525-528
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    • 2004
  • The ion-induced secondary electron emission coefficient ${\gamma}$ and work function for MgO thin film with $O_2$ plasma treatment has been investigated by ${\gamma}$ -FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ and lower work function than those without $O_2$ plasma treatment. The energy of various ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_2$ plasma treatment under RF power of 50W.

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Plasma-Enhanced Atomic-Layer-Deposited SiO2 and SiON Thin Films at Low Temperature (< 300℃) using ICP Type Remote Plasma for 3-Dimensional Electronic Devices (3차원 소자 제작을 위한 ICP Type Remote PEALD를 이용한 저온(< 300℃) SiO2 및 SiON 박막 공정)

  • Kim, Dae Hyun;Park, Tea Joo
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.2
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    • pp.98-102
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    • 2019
  • Direct plasma-enhanced atomic layer deposition (PEALD) are widely used for $SiO_2$ and SiON thin film process in current semiconductor industry. However, this exhibits poor step coverage for three-dimensional device structure due directionality of plasma species as well as plasma damage on the substrate. In this study, to overcome this issue, low temperature (< $300^{\circ}C$) $SiO_2$ and SiON thin film processes were studied using inductively coupled plasma (ICP) type remote PEALD with various reactant gases such as $O_2$, $H_2O$, $N_2$ and $NH_3$. It was confirmed that the interfacial properties such as fixed charge density and charge trapping behavior of thin films were considerably improved by hydrogen species in $H_2O$ and $NH_3$ plasma compared to the films grown with $O_2$ and $N_2$ plasma. Furthermore, the leakage current density of the thin films was suppressed for same reason.

Structural and Corrosive Properties of ZrO2 Thin Films using N2O as a Reactive Gas by RF Reactive Magnetron Sputtering (N2O 반응 가스를 주입한 RF Reactive Magnetron Sputtering에 의한 ZrO2 박막의 구조 및 부식특성 연구)

  • Jee, Seung-Hyun;Lee, Seok-Hee;Baek, Jong-Hyuk;Kim, Jun-Hwan;Yoon, Young-Soo
    • Journal of the Korean Ceramic Society
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    • v.48 no.1
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    • pp.69-73
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    • 2011
  • A $ZrO_2$ thin film as a corrosion protective layer was deposited on Zircaloy-4 (Z-4) clad material using $N_2O$ as a reactive gas by RF reactive magnetron sputtering at room temperature. The Z-4 substrate was located in plasma or out of plasma during the $ZrO_2$ deposition process to investigate mechanical and corrosive properties for the plasma immersion. Tetragonal and monoclinic phases were existed in $ZrO_2$ thin film immersed in plasma. We observed that a grain size of the $ZrO_2$ thin film immersed in plasma state is larger than that of the $ZrO_2$ thin film out of plasma state. In addition, the corrosive property of the $ZrO_2$ thin films in the plasma was characterized using the weight gains of Z-4 after the corrosion test. Compared with the $ZrO_2$ thin film immersed out of plasma, the weight gains of $ZrO_2$ thin film immersed in plasma were larger. These results indicate that the $ZrO_2$ film with the tetragonal phase in the $ZrO_2$ can protect the Z-4 from corrosive phenomena.

Photocurrent Characteristics of Plasma Sprayed TiO2 Composite Coatings according to Additive Transition Metal (전이금속을 첨가한 플라즈마 TiO2 복합 용사피막의 광전류 특성)

  • Ko, Byung-Chun;Ko, Young-Bong;Park, Kyeung-Chaea
    • Journal of the Korean institute of surface engineering
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    • v.44 no.3
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    • pp.89-94
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    • 2011
  • In this study, the photocurrent characteristics of plasma sprayed $TiO_2$ coatings have been investigated according to additive transition metal (Fe, Mn, Nb powder) and heat treatment conditions. The plasma sprayed $TiO_2$ coatings by heat treatment at $400^{\circ}C$ and 90 min had the higher photocurrent at ultraviolet light, no photocurrent at visible light. The photocurrent of plasma sprayed $TiO_2$ coatings added by Fe, Mn, Nb (named by plasma sprayed $TiO_2$ composite coatings) was lower than that of plasma sprayed $TiO_2$ coatings at ultraviolet light, as was low in intensity ratio of XRD(101)/(110). and the atomic percentage of oxygen by plasma sprayed $TiO_2$ composite coatings was higher than that by plasma sprayed $TiO_2$ coatings. The photocurrent of plasma sprayed $TiO_2$ composite coatings in heat treatment at $400^{\circ}C$ and 90 min was higher than that of plasma sprayed $TiO_2$ coatings in same heat treatment conditions at ultraviolet and visible light, as was high in oxygen affinity by heat treatment.

Experimental Results of $O_2$ Plasma Time and Power Treated on PDMS Surface for Improvement of Adhesion between Silicon and PDMS (Si-PDMS 접착력 개선을 위한 PDMS 표면의 $O_2$ plasma 처리 시간 및 Power 실험 결과)

  • Hong, Jang-Won;Chang, Jong-Hyeon;Pak, Jung-Ho
    • Proceedings of the KIEE Conference
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    • pp.1462-1463
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    • 2008
  • 패키징 재료로 유연성이 뛰어난 polydimethyl-siloxane (PDMS)를 사용하면 다양한 flexible packaging에 응용할 수 있다. 본 논문에서는 $O_2$ plasma를 이용한 PDMS의 표면 처리를 통해 PDMS의 표면에너지를 증가시키고, silicon과 PDMS 사이의 접착력 향상을 확인하였다. $O_2$ plasma power와 처리 시간에 따른 PDMS 표면의 접촉각을 측정하고 표면에너지를 산출하였는데, PDMS의 표면에너지는 $O_2$ plasma power에는 크게 영향을 받지 않고, plasma 처리 시간에 민감한 것으로 나타났다. Silicon-PDMS의 접착력 역시 plasma power에는 거의 영향을 받지 않았지만 plasma 처리 시간이 길어질수록 접착력이 커지는 것으로 확인되었는데 50W의 power로 25초 동안 처리한 조건에서 최대 130kPa의 압력까지 견디는 것으로 확인되었다. 이는 $O_2$ plasma 처리 시간이 길어짐에 따라 PDMS의 표면에너지가 커지고 이것이 silicon-PDMS의 접착력을 증가시키는 것을 나타낸다.

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