• Title, Summary, Keyword: $N_2$ plasma treatment

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N$_2$ Plasma Treatment Effects of Silicon Nitride Insulator Layer for Thin Film Transistor Applications

  • Ko, Jae-Kyung;Park, Yong-Seob;Park, Joong-Hyun;Kim, Do-Young;Yi, Jun-Sin;Chakrabarty, K.
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.563-566
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    • 2002
  • We investigated to decrease the leakage current of SiNx film by employing $N_2$ plasma treatment. The insulator layers were prepared by two step process; the $N_2$ plasma treatment and then PECVD SiNx deposition with $SiH_4$, $N_2$ gases. To prove the influence of the $N_2$ plasma treatment, the Si substrate was exposed to the plasma, which was generated in Ne gas ambient. Without plasma treatment SiNx film grow at the rate of 7. 03 nm/min, has a refractive index n = 1.77 and hydrogen content of $2.16{\times}10^{22}cm^{-3}$ for $N_2/SiH_4$ gas flow ratio of 20. The obtained films were analyzed in terms of deposition rates, refractive index, hydrogen concentration, and electrical properties. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of capacitance-voltage (C-V) disappeared. We observed plasma treated sample were decreased the leakage current density reduces by 2 orders with respect to the sample having no plasma treatment.

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Improved SiNx buffer layer by Using the $N_2$ Plasma Treatment for TFT-FRAM applications ($N_2$ 플라즈마를 이용한 TFT-FRAM용 $SiN_x$ 버퍼층의 특성 개선)

  • Lim, Dong-Gun;Yang, Kea-Joon;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.360-363
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    • 2003
  • In this paper, we investigated SiNx film as a buffer layer of TFT-FRAM. Buffer layers were prepared by two step process of a $N_2$ plasma treatment and subsequent $SiN_x$ deposition. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of current-voltage curve disappeared. After $N_2$ plasma treatment, a leakage current was decreased about 2 orders. From these results, it is possible to perform the plasma treating process to make a good quality buffer layer of MFIS-FET or capacitor as an application of non-volatile memory.

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Study on Properties Change of a-C Thin Film by N2 Plasma Treatment (질소 플라즈마처리에 의한 a-C 박막의 전계방출특성 변화에 관한 연구)

  • Ryu, Jeong-Tak;Lee, K.Y.;Honda, S.;Katayama M.;Oura, K.
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.12
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    • pp.1332-1336
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    • 2004
  • Amorphous carbon (a-C) films have been deposited on Si(100) substrate using RF magnetron system in order to investigate the electron field emission properties. The a-C films were treated by $N_2$ gas plasma at room temperature. Surface morphologices and structural properties of the a-C films before and after $N_2$ plasma treatment were observed by scanning electron microscopy and Raman spectroscope, respectively. Structural properties and surface morphology of the a-C films were changed by $N_2$ plasma treatment. The emission properties can be improved by the plasma treatment according to the contents of nitrogen on the a-C films which is varied by plasma treatment time. Before the plasma treatment, the a-C films are found to have a threshold field of 14 V/$\mu$m, but the a-C film treated by $N_2$ plasma for 30 min exhibit threshold field as low as 6.5 V/$\mu$m.

Effects of Hydrogen Plasma Treatment of the Underlying TaSiN Film Surface on the Copper Nucleation in Copper MOCVD

  • Park, Hyun-Ah;Lim, Jong-Min;Lee, Chong-Mu
    • Journal of the Korean Ceramic Society
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    • v.41 no.6
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    • pp.435-438
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    • 2004
  • MOCVD is one of the major deposition techniques for Cu thin films and Ta-Si-N is one of promising barrier metal candidates for Cu with high thermal stability. Effects of hydrogen plasma pretreatment of the underlying Ta-Si-N film surface on the Cu nucleation in Cu MOCVD were investigated using scanning electron microscopy, X-ray photoelectron spectroscopy and Auger electron emission spectrometry analyses. Cu nucleation in MOCVD is enhanced as the rf-power and the plasma exposure time are increased in the hydrogen plasma pretreatment. The optimal plasma treatment process condition is the rf-power of 40 Wand the plasma exposure time of 2 min. The hydrogen gas flow rate in the hydrogen plasma pretreatment process does not affect Cu nucleation much. The mechanism through which Cu nucleation is enhanced by the hydrogen plasma pretreatment of the Ta-Si-N film surface is that the nitrogen and oxygen atoms at the Ta-Si-N film surface are effectively removed by the plasma treatment. Consequently the chemical composition was changed from Ta-Si-N(O) into Ta-Si at the Ta-Si-N film surface, which is favorable for Cu nucleation.

Surface Analysis of Plasma Pretreated Sapphire Substrate for Aluminum Nitride Buffer Layer

  • Jeong, Woo Seop;Kim, Dae-Sik;Cho, Seung Hee;Kim, Chul;Jhin, Junggeun;Byun, Dongjin
    • Korean Journal of Materials Research
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    • v.27 no.12
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    • pp.699-704
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    • 2017
  • Recently, the use of an aluminum nitride(AlN) buffer layer has been actively studied for fabricating a high quality gallium nitride(GaN) template for high efficiency Light Emitting Diode(LED) production. We confirmed that AlN deposition after $N_2$ plasma treatment of the substrate has a positive influence on GaN epitaxial growth. In this study, $N_2$ plasma treatment was performed on a commercial patterned sapphire substrate by RF magnetron sputtering equipment. GaN was grown by metal organic chemical vapor deposition(MOCVD). The surface treated with $N_2$ plasma was analyzed by x-ray photoelectron spectroscopy(XPS) to determine the binding energy. The XPS results indicated the surface was changed from $Al_2O_3$ to AlN and AlON, and we confirmed that the thickness of the pretreated layer was about 1 nm using high resolution transmission electron microscopy(HR-TEM). The AlN buffer layer deposited on the grown pretreated layer had lower crystallinity than the as-treated PSS. Therefore, the surface $N_2$ plasma treatment on PSS resulted in a reduction in the crystallinity of the AlN buffer layer, which can improve the epitaxial growth quality of the GaN template.

Dentinal Tubules Occluding Effect Using Nonthermal Atmospheric Plasma

  • Lee, Chang Han;Kim, Young Min;Kim, Gyoo Cheon;Kim, Shin
    • International Journal of Oral Biology
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    • v.43 no.2
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    • pp.83-91
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    • 2018
  • Nonthermal atmospheric plasma has been studied for its many biomedical effects, such as tooth bleaching, wound healing, and coagulation. In this study, the effects of dentinal tubules occlusion were investigated using fluoride-carboxymethyl cellulose (F-CMC) gel, nano-sized hydroxyapatite (n-HA), and nonthermal atmospheric plasma. Human dentin specimens were divided to 5 groups (group C, HA, HAF, HAP, and HAFP). Group HA was treated with n-HA, group HAF was treated with n-HA after a F-CMC gel application, group HAP was treated with n-HA after a plasma treatment and group HAFP was treated with n-HA after a plasma and F-CMC gel treatment. The occlusion of dentinal tubules was investigated using scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS), which shows Ca/P ratio. In the EDS results, a higher Ca/P ratio was shown in the groups including n-HA than in the control group. The specimens of group HAP and HAFP had a higher Ca/P ratio in retentivity. In the SEM results, there was not a significant difference in the amount of times applied. Therefore, this study suggests F-CMC gel and n-HA treatment using nonthermal atmospheric plasma will be a new treatment method for decreasing hypersensitivity.

The Comparison of Property and Visible Light Activity between Bulk and Surface Doped N-TiO2 Prepared by Sol-gel and N2-plasma Treatment

  • Hu, Shaozheng;Li, Fayun;Fan, Zhiping
    • Bulletin of the Korean Chemical Society
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    • v.33 no.1
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    • pp.199-203
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    • 2012
  • A modified sol-gel method and $N_2$-plasma treatment were used to prepare bulk and surface doped N-$TiO_2$, respectively. XRD, TEM, UV-vis spectroscopy, $N_2$ adsorption, Elemental Analyzer, Photoluminescence, and XP spectra were used to characterize the prepared $TiO_2$ samples. The N doping did not change the phase composition and particle sizes of $TiO_2$ samples, but increased the visible light absorption. The photocatalytic activities were tested in the degradation of an aqueous solution of a reactive dyestuff, methylene blue, under visible light. The photocatalytic activity of surface doped N-$TiO_2$ prepared by $N_2$-plasma was much higher than that of bulk doped N-$TiO_2$ prepared by sol-gel method. The possible mechanism for the photocatalysis was proposed.

Influence of Gas Composition and Treatment Time on the Surface Properties of AISI 316L Austenitic Stainless Steels During Low-Temperature Plasma Nitrocarburizing Treatment (AISI 316L강의 저온 플라즈마침질탄화처리 시 가스조성과 처리시간이 표면특성에 미치는 영향)

  • Lee, In-Sup
    • Korean Journal of Metals and Materials
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    • v.47 no.11
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    • pp.716-721
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    • 2009
  • The major drive for the application of low-temperature plasma treatment in nitrocarburizing of austenitic stainless steels lies in improved surface hardness without degraded corrosion resistance. The low-temperature plasma nitrocarburizing was performed in a gas mixture of $N_{2}$, $H_{2}$, and carbon-containing gas such as $CH_{4}$ at $450^{\circ}C$. The influence of the processing time (5~30 h) and $N_{2}$ gas composition (15~35%) on the surface properties of the nitrocarburized layer was investigated. The resultant nitrocarburized layer was a dual-layer structure, which was comprised of a N-enriched layer (${\gamma}_N$) with a high nitrogen content on top of a C-enriched layer (${\gamma}_C$) with a high carbon content, leading to a significant increase in surface hardness. The surface hardness reached up to about $1050HV_{0.01}$, which is about 4 times higher than that of the untreated sample ($250HV_{0.01}$). The thickness of the hardened layer increased with increasing treatment time and $N_{2}$ gas level in the atmosphere and reached up to about $25{\mu}m$. In addition, the corrosion resistance of the treated samples without containing $Cr_{2}N$ precipitates was enhanced than that of the untreated samples due to a high concentration of N on the surface. However, longer treatment time (25% $N_{2}$, 30 h) and higher $N_{2}$ gas composition (35% $N_{2}$, 20 h) resulted in the formation of $Cr_{2}N$ precipitates in the N-enriched layer, which caused the degradation of corrosion resistance.

Improvement of dielectric and interface properties of Al/CeO$_2$/Si capacitor by using the metal seed layer and $N_2$ plasma treatment (금속씨앗층과 $N_2$ 플라즈마 처리를 통한 Al/CeO$_2$/Si 커패시터의 유전 및 계면특성 개선)

  • 임동건;곽동주;이준신
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.326-329
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    • 2002
  • In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.

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Structural Characteristics of Ar-N2 Plasma Treatment on Cu Surface (Ar-N2 플라즈마가 Cu 표면에 미치는 구조적 특성 분석)

  • Park, Hae-Sung;Kim, Sarah Eunkyung
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.4
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    • pp.75-81
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    • 2018
  • The effect of $Ar-N_2$ plasma treatment on Cu surface as one of solutions to realize reliable Cu-Cu wafer bonding was investigated. Structural characteristic of $Ar-N_2$ plasma treated Cu surface were analyzed using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscope. Ar gas was used for a plasma ignition and to activate Cu surface by ion bombardment, and $N_2$ gas was used to protect the Cu surface from contamination such as -O or -OH by forming a passivation layer. The Cu specimen under high Ar partial pressure plasma treatment showed more copper oxide due to the activation on Cu surface, while Cu surface after high $N_2$ gas partial pressure plasma treatment showed less copper oxide due to the formation of Cu-N or Cu-O-N passivation layer. It was confirmed that nitrogen plasma can prohibit Cu-O formation on Cu surface, but nitrogen partial pressure in the $Ar-N_2$ plasma should be optimized for the formation of nitrogen passivation layer on the entire surface of Cu wafer.