Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. We have studied the effect of oxygen partial pressure on the threshold voltage($V_{th}$) of a-IGZO TFTs. Interestingly, the $V_{th}$ value of the oxide TFTs are slightly shifted in the positive direction due to increasing $O_2$ partial pressure from 0.007 to 0.009 mTorr. The device performance is significantly affected by varying $O_2$ ratio, which is closely related with oxygen vacancies provide the needed free carriers for electrical conduction.

Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.

The polishing pad is important element for polishing characteristic such as material removal rate(MRR) and within wafer non-uniformity(WIWNU) in the chemical mechanical planarization(CMP). The result of the viscoelasticity measurement shows that 1st elastic modulus is increased and 2nd elastic modulus is decreased when the top pad is thickened. The finite element analysis(FEA) was conducted to predict characteristic of polishing behavior according to the pad thickness. The result of polishing experiment was similar with the FEA, and it shows that the 1st elastic modulus affects instantaneous deformation of pad related to MRR. And the 2nd elastic modulus has an effect on WIWNU due to the viscoelasticity deformation of pad.

The dual ion-implantation trench edge termination techniques were investigated and optimized using a two-dimensional device simulator. By trenching the field ring site which would be dual implanted, a better blocking capability can be obtained. The results show that the p-n junction with dual implanted junction field-ring can accomplish nearly 20% increase of breakdown voltage in comparison with the conventional trench field-rings. The fabrication is relatively difficult. But the trench etched field ring with dual ion-implantation is surpassed for breakdown voltage and consume same area and extensive device simulations as well as qualitative analysis confirm these conclusions.

In this study, we have investigated the effects of Cr dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;{\varepsilon}^*$, and $tan{\delta}$). Admittance spectra show more than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states in ZnO-$Bi_2O_3-Cr_2O_3$ (ZBCr) system. Three kinds of temperature-dependant activation energies ($E_{bt}'s$) were calculated as 0.11~0.14 eV of attractive coulombic center, 0.16~0.17 eV of $Zn_{\ddot{i}}$, and 0.33 eV of $V_o^{\cdot}$ as dominant bulk defects. The grain boundaries of ZBCr could be electrochemically divided into two types as a sensitive to ambient oxygen i.e. electrically active one and an oxygen-insensitive i.e. electrically inactive one. The grain boundaries were electrically single type under 460 K (equivalent circuit as parallel $R_{gb1}C_{gb1}$) but separated as double one ($R_{gb1}C_{gb1}-R_{gb2}C_{gb2}$) over 480 K. It is revealed that the dielectric functions are very useful tool to separate the overlapped bulk defect levels and to characterize the electrical properties of grain boundaries.

The effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films on polyimide substrate were studied. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the polyimide substrate and the GZO film, $O_2$ plasma pretreatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the crystallinity increased and the contact angle decreased significantly. When the RF power was 100 W and the treatment time was 120 sec, the resistivity of GZO films on the polyimide substrate was $1.90{\times}10^{-3}{\Omega}-cm$.

In this study, in order to develop the lead-free piezoelectric ceramics with high piezoelectric and dielectric properties, $(K_{0.5}Na_{0.5})(Nb_{0.97}Sb_{0.03})O_3$ ceramics were fabricated using a conventional mixed oxide process and their piezoelectric and dielectric characteristics were investigated according to the $K_{5.4}Cu_{1.3}Ta_{10}O_{29}$ addition. $K_{5.4}Cu_{1.3}Ta_{10}O_{29}$ addition enhanced density, electromechanical coupling factor($k_p$) piezoelectric constant $d_{33}$ and mechanical quality factor($Q_m$). At the 0.9 mol% $K_{5.4}Cu_{1.3}Ta_{10}O_{29}$ addition, density, electromechanical coupling factor($k_p$), dielectric constant(${\varepsilon}_r$) and piezoelectric constant($d_{33}$) of specimen showed the optimum values of 0.46, 471, and 148 pC/N, respectively.

The response characteristics of AE (acoustic emission) sensors with a coupled vibration mode and a non-coupled vibration mode were investigated according to PD(partial discharge) quantities in XLPE (cross linked polyethylene) sheets and craft papers immersed in insulating oil. The response voltages of a coupled vibration mode AE sensor were linearly proportional to the PD quantities up to 1,000 pC in XLPE sheets, while a non-coupled vibration mode AE sensor did not show the similar linearity. In case of a test of craft papers immersed in insulating oil, a linearity between response voltages and PD quantities was observed up to 550 pC, but after that, similar linearity between response voltage of any types of AE sensor and PD quantities was not shown.

In this study, we propose characteristics improvement methods according to via hole plating method for FBAR Duplexer with bandwidth($T_x4: 1850 MHz ~ 1910 MHz, $R_x$:1930 MHz ~ 1990 MHz) which is used for wireless systems. Also, we designed and fabricated $3.8{\times}3.8{\times}1.8mm$ size microminiature FBAR Duplexer based on this proposal. First of all, in this study, we fabricated pentagon shape resonators by different size to make filter combination, and their quality factor(Q) are 687 with 6.6% of ${k_{eff}}^2$. Using this resonators, we designed $3{\times}2$ Type $T_x$ filter and $3{\times}4$ Type $R_x$ filter. The transmission line, which works as phase shifter, is designed with 210 ${\mu}m$ in width and 18 mm in length Stripline type. Inductor, which is used for matching component, is designed with width of 75 ${\mu}m$, a technically achievable minimum width. And adopted plating method of filling via hole with conductive epoxy for improved grounding and thermal conductivity. Using these configuration with all of the matching component values, we found Duplexer characteristics of -1.57 dB ~ -1.73 dB in insertion loss, -56 dB in attenuation at 1850 MHz ~ 1910 MHz of $T_x$ band. Also, found -2.71 dB ~ -3.23 dB in insertion loss, -58 dB in attenuation at 1930 MHz ~ 1990 MHz of $R_x$ band.

In this paper, we studied WVTR(water vapor transmission rate) properties of $Si_3N_4$ thin film that was deposited using TCP-CVD (transformer coupled plasma chemical vapor deposition) method for the possibility of OLED(organic light emitting diode) encapsulation. Considering the conventional OLED processing temperature limit of below $80^{\circ}C$, the $Si_3N_4$ thin films were deposited at room temperature. The $Si_3N_4$ thin films were prepared with the process conditions: $SiH_4$ and $N_2$, as reactive gases; working pressure below 15 mTorr; RF power for TCP below 500 W. Through MOCON test for WVTR, we analyzed water vapor permeation per day. We obtained that WVTR property below 6~0.05 gm/$m^2$/day at process conditions. The best preparation condition for $Si_3N_4$ thin film to get the best WVTR property of 0.05 gm/$m^2$/day were $SiH_4:N_2$ gas flow rate of 10:200 sccm, working pressure of 10 mTorr, working distance of 70 mm, TCP power of 500 W and film thickness of 200 nm. respectively. The proposed results indicates that the $Si_3N_4$ thin film could replace metal or glass as encapsulation for flexible OLED.

This paper shows that the diffraction efficiency is influenced by superadditivity for the combination of the different developing agent and concentrations in the reversal bleach applied to the Slavich PFG-01 plate to be used for recording transmission holograms. The four developers based on ascorbic acid in combination with metol, phenidone, hydroquinone respectively, were studied. In diffraction efficiency aspect, the superadditivity effect of mixture of two developing agents is lower than one developing agent developer, AAC in the reversal bleach.

The single-phase switched reluctance motor(SRM) generates the positive torque in the restricted section. So, it can not started by itself and the torque ripple is heavier than poly-phase. For self-starting and fixing rotating direction, the rotor should be placed at the rising inductance slope when stationary. The parking permanent magnet locates the rotor in the fixed position, which can be started by it-self. It is very simple and cost effective but has some drawbacks. It affects the rotor during the operation, so the characteristics of motor, such as a torque, speed, and ripple are changed to go bad. This paper presents the detent torque of parking magnet starting device through the finite element analysis and experiments. The finite element analysis is performed at incremental rotor positions over one detent torque cycle for any one pole. The prototype, fabricated in the previous research, is used for the experiments. The inductance, instant torque, and detent torque are calculated using the terminal voltage and phase current. Finally, the finite element analysis result and the experiment result are compared for analysis and validity.

Line to ground faults by deterioration of insulators has frequently occurred in power system, and the main cause is surface contamination of the insulators. The contamination of insulator is analyzed by monitoring the surface leakage current flowing them. The suspension insulator is monitored by installation of a zero-phase current sensor(ZCT), but the line-post insulator is impossible to apply the same method because of its large diameter structure. This paper proposed a detection method of surface leakage current for a line-post insulator, and it can easily be applied to new and/or built insulators. The leakage current is indirectly calculated from the potential difference between the metal electrode attached on the surface of insulator and the ground connector. To evaluate the performance of the proposed method, the leakage current is compared as a function of contamination condition controlled by the density of NaCl solution. The leakage current is proportioned to the density of NaCl solution, and the voltage detected by the electrode showed the same trend. From the experimental results, we designed and fabricated a monitoring device which is composed of a detection electrode, signal converter, microprocessor, and ZigBee, and its measurement range is $10{\mu}A{\sim}5mA$.

Carbon nanotubes (CNTs) were synthesized by Fe-catalytic chemical vapor deposition (CVD) method about $800^{\circ}C$. The influence of process parameters such as pretreatment conditions, gas flow ratio, processing time, etc on the growth of CNTs was investigated by field emission scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. Ammonia was added to acetylene source gas before and during the CNT growth. Different types of CNTs formed depending upon the processing condition. It was found that ammonia prevented amorphous carbons from adsorbing to the outer wall of CNT, resulting in purification of CNTs during CNT growth.

This paper describes the design and analysis of AlN piezoelectric micro energy harvester. The harvester was designed to convert ambient vibration energy to electrical power as a AlN piezoelectric material compatible with CMOS (complementary metal oxide semiconductor) process. To cut off the leakage current, AlN was used as the insulating layer. Also, Mo was used for the excellent c-axis crystal growth as the bottom electrode. The AlN harvester which it has the low operating frequency was designed by using the ANSYS FEA (finite element analysis). From the simulation results, the resonance frequency of designed model is about 360 Hz and analyzed the bending mode, displacement and expectation output.