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Influence of Emitter Width on the Performance of 975-nm (In,Ga)(As,P)/(Al,Ga)As High-power Laser Diodes

  • Yang, Jung-Tack (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Kim, Younghyun (Formerly at Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Pournoury, Marzieh (Formerly at Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Lee, Jae-Bong (QSI) ;
  • Bang, Dong-Soo (QSI) ;
  • Kim, Tae-Kyung (QSI) ;
  • Choi, Woo-Young (Department of Electrical and Electronic Engineering, Yonsei University)
  • Received : 2019.06.03
  • Accepted : 2019.08.05
  • Published : 2019.10.25

Abstract

The influence of high-power laser diode (HPLD) emitter width on the device performance is investigated for 975-nm (In,Ga)(As,P)/(Al,Ga)As broad-area HPLDs, using self-consistent electro-thermal-optical simulation. To guarantee the simulation's accuracy, simulated results are matched with the measured results for a sample HPLD with fitting parameters. The influences of HPLD emitter width on temperature distribution, output power, and the beam product parameter (BPP) are analyzed for three different emitter widths of 50, 70, and $90{\mu}m$. It is found that a device with smaller emitter width exhibits both thermal rollover and thermal blooming at lower output power, but smaller BPP.

Keywords

High-power laser diode;Thermal roll-over;Thermal blooming;Emitter width

Acknowledgement

Supported by : Agency for Defense Development of Korea