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Characterization of AZO Thin Film by Plasma Surface Treatment

플라즈마 표면 처리에 따른 AZO 박막의 특성 변화

  • Woo, Jong-Chang (Department of Semiconductor Automation, Daeduk University) ;
  • Kim, Gwan-Ha (Department of Semiconductor Automation, Daeduk University)
  • 우종창 (대덕대학교 반도체자동화과) ;
  • 김관하 (대덕대학교 반도체자동화과)
  • Received : 2018.12.19
  • Accepted : 2019.01.21
  • Published : 2019.03.01

Abstract

There is a need for the development of transparent conductive materials that are economical and environmentally friendly with exhibit low resistivity and high transmittance in the visible spectrum. In this study, the deposition rate and uniformity of Al-doped ZnO-thin films were improved by changing the Z-motion of the sputtering system. The deposition rate and the uniformity were determined to be 3.44 nm/min and 1.23%, respectively, under the 10 mm Z-motion condition. During $O_2$ plasma treatment, the intrusion-type metal elements in the thin film were reduced, which contributed to an oxygen vacancy reduction in addition to structural stabilization. Moreover, the sheet resistance was more easily saturated.

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Fig. 1. Schematic drawing of sputtering system.

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Fig. 2. Deposition rate and uniformity of AZO thin film as a function of Z-motion.

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Fig. 3. SEM image of AZO thin film as a function of Z-motion.

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Fig. 4. Sheet resistance of AZO thin film as a function of elapsed time.

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Fig. 5. Reflectance of AZO thin film as a function of plasma treatment conditions.

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Fig. 6. Transmittance of AZO thin film as a function of plasma treatment conditions.

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Fig. 7. Optical energy bandgap of AZO thin film as a function of plasma treatment conditions.

Table 1. Process parameter & conditions.

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Acknowledgement

Supported by : National Research Foundation of Korea (NRF)

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