DOI QR코드

DOI QR Code

접합 및 무접합 이중게이트 MOSFET에 대한 문턱전압 이동 및 드레인 유도 장벽 감소 분석

Analysis of Threshold Voltage Roll-Off and Drain Induced Barrier Lowering in Junction-Based and Junctionless Double Gate MOSFET

  • 정학기 (군산대학교 전자공학과)
  • Jung, Hak Kee (Department of Electronic Engineering, Kunsan National University)
  • 투고 : 2018.10.31
  • 심사 : 2018.12.03
  • 발행 : 2019.03.01

초록

An analytical threshold voltage model is proposed to analyze the threshold voltage roll-off and drain-induced barrier lowering (DIBL) for a junction-based double-gate (JBDG) MOSFET and a junction-less double-gate (JLDG) MOSFET. We used the series-type potential distribution function derived from the Poisson equation, and observed that it is sufficient to use n=1 due to the drastic decrease in eigenvalues when increasing the n of the series-type potential function. The threshold voltage derived from this threshold voltage model was in good agreement with the result of TCAD simulation. The threshold voltage roll-off of the JBDG MOSFET was about 57% better than that of the JLDG MOSFET for a channel length of 25 nm, channel thickness of 10 nm, and oxide thickness of 2 nm. The DIBL of the JBDG MOSFET was about 12% better than that of the JLDG MOSFET, at a gate metal work-function of 5 eV. It was also found that decreasing the work-function of the gate metal significantly reduces the DIBL.

JJJRCC_2019_v32n2_104_f0001.png 이미지

Fig. 1. Schematic cross sectional diagram of double gate (DG) MOSFET.

JJJRCC_2019_v32n2_104_f0002.png 이미지

Fig. 2. Eigenvalue λn under given conditions. We show the value of sinh (πLgn), denominator of potential distribution function.

JJJRCC_2019_v32n2_104_f0003.png 이미지

Fig. 3. Comparison of threshold voltage roll-offs for this model and TCAD simulation [3] under given conditions. The line and dots denote results of this model and TCAD, respectively.

JJJRCC_2019_v32n2_104_f0004.png 이미지

Fig. 4. Comparison of threshold voltage roll-offs for JBDG MOSFET (Na = 5 × 1019 / cm3 ), undoped channel DGMOSFET, and JLDGMOSFET (Nd = 5 × 1019 / cm3 ) at (a) Vds = 0.1 V and (b) Vds = 1.0 V .

JJJRCC_2019_v32n2_104_f0005.png 이미지

Fig. 5. Threshold voltage roll-offs for doping concentraion (a) with channel thickness as a parameter and (b) with oxide thickness as a parameter under given conditions.

JJJRCC_2019_v32n2_104_f0006.png 이미지

Fig. 6. DIBLs for doping concentration under given conditions at channel length of 25 nm with silicon and oxide thickness as parameters.

JJJRCC_2019_v32n2_104_f0007.png 이미지

Fig. 7. DIBLs for doping concentration under given conditions at channel length of 25 nm with gate workfunction as a parameter.

참고문헌

  1. E. Rauly, B. Iniguez, and D. Flandre, Electrochem. Solid-State Lett., 4, G28 (2001). [DOI: https://doi.org/10.1149/1.1347225] https://doi.org/10.1149/1.1347225
  2. H. Lu, W. Y. Lu, and Y. Taur, Semicond. Sci. Technol., 23, 015006 (2008). [DOI: https://doi.org/10.1088/0268-1242/23/1/015006] https://doi.org/10.1088/0268-1242/23/1/015006
  3. Q. Xie, Z. Wang, and Y. Taur, IEEE Trans. Electron Devices, 64, 3511 (2017). [DOI: https://doi.org/10.1109/TED.2017.2716969] https://doi.org/10.1109/TED.2017.2716969
  4. A. Gnudi, S. Reggiani, E. Gnani, and G. Baccarani, IEEE Trans. Electron Device., 60, 1342 (2013). [DOI: https://doi.org/10.1109/TED.2013.2247765] https://doi.org/10.1109/TED.2013.2247765
  5. T. Holtij, M. Graef, F. M. Hain, A. Kloes, and B. Iniguez, IEEE Trans. Electron Device., 61, 288 (2014). [DOI: https://doi.org/10.1109/TED.2013.2281615] https://doi.org/10.1109/TED.2013.2281615
  6. G. Hu, P. Xiang, Z. Ding, R. Liu, L. Wang, and T. A. Tang, IEEE Trans. Electron Device., 61, 688 (2014). [DOI: https://doi.org/10.1109/TED.2013.2297378] https://doi.org/10.1109/TED.2013.2297378
  7. C. Jiang, R. Liang, J. Wang, and J. Xu, AIP Adv., 5, 057122 (2015). [DOI: https://doi.org/10.1063/1.4921086] https://doi.org/10.1063/1.4921086
  8. X. Liang and Y. Taur, IEEE Trans. Electron Device., 51, 1385 (2004). [DOI: https://doi.org/10.1109/TED.2004.832707] https://doi.org/10.1109/TED.2004.832707
  9. Q. Chen, B. Agrawal, and J. D. Meindl, IEEE Trans. Electron Device., 49, 1086 (2002). [DOI: https://doi.org/10.1109/TED.2002.1003757] https://doi.org/10.1109/TED.2002.1003757
  10. X. Jin, X. Liu, M. Wu, R. Chuai, J. H. Lee, and J. H. Lee, J. Phys. D: Appl. Phys., 45, 375102 (2012). [DOI: https://doi.org/10.1088/0022-3727/45/37/375102] https://doi.org/10.1088/0022-3727/45/37/375102