Fig. 1. Schematic cross sectional diagram of double gate (DG) MOSFET.
Fig. 2. Eigenvalue λn under given conditions. We show the value of sinh (πLg/λn), denominator of potential distribution function.
Fig. 3. Comparison of threshold voltage roll-offs for this model and TCAD simulation  under given conditions. The line and dots denote results of this model and TCAD, respectively.
Fig. 4. Comparison of threshold voltage roll-offs for JBDG MOSFET (Na = 5 × 1019 / cm3 ), undoped channel DGMOSFET, and JLDGMOSFET (Nd = 5 × 1019 / cm3 ) at (a) Vds = 0.1 V and (b) Vds = 1.0 V .
Fig. 5. Threshold voltage roll-offs for doping concentraion (a) with channel thickness as a parameter and (b) with oxide thickness as a parameter under given conditions.
Fig. 6. DIBLs for doping concentration under given conditions at channel length of 25 nm with silicon and oxide thickness as parameters.
Fig. 7. DIBLs for doping concentration under given conditions at channel length of 25 nm with gate workfunction as a parameter.