Fig. 1. Schematic diagram of SiC single crystal growth equipment: 1-SiC Seed, 2-porous graphite inner crucible filled VC, 3-SiC powder (99.99% purity), 4-SiC powder (99.999% purity), 5-graphite crucible.
Fig. 2. Process condition by PVT Method.
Fig. 3. Photographs of SiC ingots grown with powder source of 99.99% (method A) and 99.999% (Method B) and three wafers sliced wafers from different position of grown ingot (method B).
Fig. 4. XRD pattern of vanadium doped SiC crystals.
Fig. 5. The optical microscope and SEM & EDS image of vanadium-doped SiC crystal grown by Method A and Method B.
Fig. 6. The resistivity mapping data (COREMA) of SiC wafers fabricated from SiC crystals grown on method A and method B.
Fig. 7. Foreign polytype like 15 R on method B (#3) was detected by a Raman spectra analysis and different polytype exhibited different resistivity.
Table 1. GDMS data for method A and B.