Angle-resolved photoemission spectrscopy for chalcogenide and oxide heterostructures

칼코겐화물과 산화물 이종구조의 각도분해능 광전자분광 연구

  • 장영준 (서울시립대학교 물리학과)
  • Published : 2018.06.30


Chalcogenide and oxide heterostructures have been studied as a next-generation electronic materials, due to their interesting electronic properties, such as direct bandgap semiconductor, ferroelectricity, ferromagnetism, superconductivity, charge-density waves, and metal-insulator transition, and their modification near heterointerfaces, so called, electronic reconstruction. An angle-resolved photoemission spectroscopy (ARPES) is a powerful technique to unveil such novel electronic phases in detail, especially combined with high quality thin film preparation methods, such as, molecular beam epitaxy and pulsed laser deposition. In this article, the recent ARPES results in chalcogenide and oxide thin films will be introduced.



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