습식 에칭 공정에서의 과산화수소 이상반응에 대한 안전 대책 및 제어에 관한 연구

• Yoo, Heung-Ryol (Department of Mechanical Facility Control Engineering, Korea University of Technology and Education) ;
• Son, Yung-Deug (Department of Mechanical Facility Control Engineering, Korea University of Technology and Education)
• 유흥렬 (한국기술교육대학교 기계설비제어공학과) ;
• 손영득 (한국기술교육대학교 기계설비제어공학과)
• Accepted : 2018.04.06
• Published : 2018.04.30
• 33 10

Abstract

The TFT-LCD industry is a kind of large-scale industrial Giant Microelectronics device industry and has a similar semiconductor process technology. Wet etching forms a relatively large proportion of the entire TFT process, but the number of published research papers on this topic is limited. The main reason for this is that the components of the etchant, in which the reaction takes place, are confidential and rarely publicized. Aluminum (Al) and copper (Cu), which have been used in recent years for the manufacture of large area LCDs, are very difficult materials to process using wet etching. Cu, a low-resistance material, can only be used in the wet etching process, and is used as a substitute for Al due to its high speed etching, low failure rate, and low power consumption. Further, the abnormal reaction of hydrogen peroxide ($H_2O_2$), which is used as an etching solution, requires additional piping and electrical safety devices. This paper proposes a method of minimizing the damage to the plant in the case of adverse reactions, though it cannot limit the adverse reaction of hydrogen peroxide. In recent years, there have been many cases in which aluminum etching equipment has been changed to copper. This paper presents a countermeasure against abnormal reactions by implementing safety PLC with a high safety grade.

Keywords

Al;Cu;Etchant;$H_2O_2$;PCB Board;Reactions;Safety PLC;Wet-Etching

Acknowledgement

Supported by : 한국기술교육대학교

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