Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Structural and Electrical Properties of Bi0.9A0.1Fe0.975Zn0.025O3-δ (A=Eu, Dy) BiFeO3 Thin Films by Chemical Solution Deposition

화학 용액 증착법으로 제조한 Bi0.9A0.1Fe0.975Zn0.025O3-δ (A=Eu, Dy) 박막의 구조와 전기적 특성

  • 김윤장 (청운대학교 전자공학과) ;
  • 김진원 ((주) 아이비머티리얼즈) ;
  • 장성근 (청운대학교 전자공학과)
  • Received : 2018.01.13
  • Accepted : 2018.02.13
  • Published : 2018.05.01

Abstract

Pure $BiFeO_3$ (BFO) and codoped $Bi_{0.9}A_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (A=Eu, Dy) thin films were prepared on Pt(111)/Ti/$SiO_2$/Si(100) substrates by chemical solution deposition. The remnant polarizations (2Pr) of the $Bi_{0.9}Eu_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BEFZO) and $Bi_{0.9}Dy_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BDFZO) thin films were about 36 and $26{\mu}C/cm^2$ at the maximum electric fields of 900 and 917 kV/cm, respectively, at 1 kHz. The codoped BEFZO and BDFZO thin films showed improved electrical properties, and leakage current densities of 3.68 and $1.21{\times}10^{-6}A/cm^2$, respectively, which were three orders of magnitude lower than that of the pure BFO film, at 100 kV/cm.

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Acknowledgement

Supported by : 청운대학교

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