Low-Voltage Operating N-type Organic Field-Effect Transistors by Charge Injection Engineering of Polymer Semiconductors and Bi-Layered Gate Dielectrics

N형 고분자 반도체의 전하주입 특성 향상을 통한 저전압 유기전계효과트랜지스터 특성 연구

  • Moon, Ji-Hoon (Department of Graphic Arts Information Engineering, Pukyong National University) ;
  • Baeg, Kang-Jun (Department of Graphic Arts Information Engineering, Pukyong National University)
  • 문지훈 (부경대학교 공과대학 인쇄정보공학과) ;
  • 백강준 (부경대학교 공과대학 인쇄정보공학과)
  • Received : 2017.08.04
  • Accepted : 2017.08.28
  • Published : 2017.10.01


Herein, we report the fabrication of low-voltage N-type organic field-effect transistors by using high capacitance fluorinated polymer gate dielectrics such as P(VDF-TrFE), P(VDF-TrFE-CTFE), and P(VDF-TrFE-CFE). Electron-withdrawing functional groups in PVDF-based polymers typically cause the depletion of negative charge carriers and a high contact resistance in N-channel organic semiconductors. Therefore, we incorporated intermediate layers of a low-k polymerto prevent the formation of a direct interface between PVDF-based gate insulators and the semiconducting active layer. Consequently, electron depletion is inhibited, and the high charge resistance between the semiconductor and source/drain electrodes is remarkably improved by the in corporation of solution-processed charge injection layers.


Supported by : 부경대학교


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