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Microstructural and Electrical Properties of Bi0.9A0.1Fe0.975V0.025O3+α(A=Nd, Tb) Thin Films by Chemical Solution Deposition Method

화학용액 증착법으로 제조한 Bi0.9A0.1Fe0.975V0.025O3+α(A=Nd, Tb) 박막의 구조와 전기적 특성

  • 장성근 (청운대학교 인천캠퍼스 전자공학과) ;
  • 김윤장 (청운대학교 인천캠퍼스 전자공학과)
  • Received : 2017.08.02
  • Accepted : 2017.08.16
  • Published : 2017.10.01

Abstract

We have evaluated the ferroelectric and electrical properties of pure $BiFeO_3$ (BFO) and $Bi_{0.9}A_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (A=Nd, Tb) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by using a chemical solution deposition method. The remnant polarization ($2P_r$) of the $Bi_{0.9}Tb_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BTFVO) thin film was approximately $65{\mu}C/cm^2$, with a maximum applied electric field of 950 kV/cm and a frequency of 10 kHz, where as that of the $Bi_{0.9}Nd_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BNFVO) thin film was approximately $37{\mu}C/cm^2$ with a maximum applied electric field of 910 kV/cm. The leakage current density of the co-doped BNFVO thin film was four orders of magnitude lower than that of the pure BFO thin film, at $2.75{\times}10^{-7}A/cm^2$ with an applied electric field of 100 kV/cm. The grain size and uniformity of the co-doped BNFVO and BTFVO thin films were improved, in comparison to the pure BFO thin film, through structural modificationsdue to the co-doping with Nd and Tb.

Acknowledgement

Supported by : 청운대학교

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