- Volume 12 Issue 5
DOI QR Code
Compact Current Model of Single-Gate/Double-Gate Tunneling Field-Effect Transistors
- Yu, Yun Seop (Dept. of Electrical, Electronic and Control Electronic Engineering and IITC, Hankyong National University) ;
- Najam, Faraz (Dept. of Electrical, Electronic and Control Electronic Engineering and IITC, Hankyong National University)
- Received : 2017.03.07
- Accepted : 2017.04.27
- Published : 2017.09.01
A compact current model applicable to both single-gate (SG) and double-gate (DG) tunneling field-effect transistors (TFETs) is presented. The model is based on Kane's band-to-band tunneling (BTBT) model. In this model, the well-known and previously-reported quasi-2-D solution of Poisson's equation is used for the surface potential and length of the tunneling path in the tunneling region. An analytical tunneling current expression is derived from expressions of derivatives of local electric field and surface potential with respect to tunneling direction. The previously reported correction factor with three fitting parameters, compensating for superlinear onset and saturation current with drain voltage, is used. Simulation results of the proposed TFET model are compared with those from a technology computer-aided-design (TCAD) simulator, and good agreement in all operational bias is demonstrated. The proposed SG/DG-TFET model is developed with Verilog-A for circuit simulation. A TFET inverter is simulated with the Verilog-A SG/DG-TFET model in the circuit simulator; the model exhibits typical inverter characteristics, thereby confirming its effectiveness.
Compact model;Band-to-band tunneling (BTBT);Surface potential;Tunneling field-effect-transistor (TFET)
Supported by : Ministry of Trade, Industry & Energy (MOTI), Korea Semiconductor Research Consortium(KSRC), IDEC (EDA Tool)
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