Review of Failure Mechanisms on the Semiconductor Devices under Electromagnetic Pulses

고출력전자기파에 의한 반도체부품의 고장메커니즘 고찰

  • Kim, Dongshin (Electronic Convergence Material & Device Research Center, Korea Electronics Technology Institute) ;
  • Koo, Yong-Sung (Electronic Convergence Material & Device Research Center, Korea Electronics Technology Institute) ;
  • Kim, Ju-Hee (Electronic Convergence Material & Device Research Center, Korea Electronics Technology Institute) ;
  • Kang, Soyeon (Electronic Convergence Material & Device Research Center, Korea Electronics Technology Institute) ;
  • Oh, Wonwook (Electronic Convergence Material & Device Research Center, Korea Electronics Technology Institute) ;
  • Chan, Sung-Il (Electronic Convergence Material & Device Research Center, Korea Electronics Technology Institute)
  • 김동신 (전자부품연구원 융복합전자소재연구센터) ;
  • 구용성 (전자부품연구원 융복합전자소재연구센터) ;
  • 김주희 (전자부품연구원 융복합전자소재연구센터) ;
  • 강소연 (전자부품연구원 융복합전자소재연구센터) ;
  • 오원욱 (전자부품연구원 융복합전자소재연구센터) ;
  • 천성일 (전자부품연구원 융복합전자소재연구센터)
  • Received : 2016.11.28
  • Accepted : 2017.06.09
  • Published : 2017.06.30


This review investigates the basic principle of physical interactions and failure mechanisms introduced in the materials and inner parts of semiconducting components under electromagnetic pulses (EMPs). The transfer process of EMPs at the semiconducting component level can be explained based on three layer structures (air, dielectric, and conductor layers). The theoretically absorbed energy can be predicted by the complex reflection coefficient. The main failure mechanisms of semiconductor components are also described based on the Joule heating energy generated by the coupling between materials and the applied EMPs. Breakdown of the P-N junction, burnout of the circuit pattern in the semiconductor chip, and damage to connecting wires between the lead frame and semiconducting chips can result from dielectric heating and eddy current loss due to electric and magnetic fields. To summarize, the EMPs transferred to the semiconductor components interact with the chip material in a semiconductor, and dipolar polarization and ionic conduction happen at the same time. Destruction of the P-N junction can result from excessive reverse voltage. Further EMP research at the semiconducting component level is needed to improve the reliability and susceptibility of electric and electronic systems.


Semiconductor devices;Electromagnetic pulse;Failure mechanism;Coupling;Junction breakdown


Supported by : 한국에너지기술평가원(KETEP)


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