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Improvement of the Light Emission Efficiency on Nonpolar a-plane GaN LEDs with SiO2 Current Blocking Layer

무분극 a-plane 질화물계 발광다이오드에서 SiO2 전류 제한 층을 통한 발광 효율 증가

  • Hwang, Seong Joo (Department of Printed Electronics Engineering, Sunchon National University) ;
  • Kwak, Joon Seop (Department of Printed Electronics Engineering, Sunchon National University)
  • 황성주 (순천대학교 인쇄전자공학과) ;
  • 곽준섭 (순천대학교 인쇄전자공학과)
  • Received : 2016.12.23
  • Accepted : 2017.01.26
  • Published : 2017.03.01

Abstract

In this study, we investigate the $SiO_2$ current blocking layer (CBL) to improve light output power efficiency in nonpolar a-plane (11-20) GaN LEDs on a r-plane sapphire substrate. The $SiO_2$ CBL was produced under the p-pad layer using plasma enhanced chemical vapor deposition (PECVD). The results show that nonpolar GaN LED light output power with the $SiO_2$ CBL is considerably enhanced compared without the $SiO_2$ CBL. This can be attributed to reduced light absorption at the p-pad due to current blocking to the active layer by the $SiO_2$ CBL.

Acknowledgement

Supported by : 순천대학교

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