A Study on the Electrical Properties of MIM Structures Based on Ge2Sb2Te5 and Ge8Sb2Te11 Thin Films for ReRAM

ReRAM응용을 위한 Ge2Sb2Te5와 Ge8Sb2Te11 기반 MIM구조 박막의 전기적 특성 연구

  • Jang, Hwi-Jong (Department of Advanced Chemicals and Engineering, Chonnam National University) ;
  • Kong, Heon (Department of Advanced Chemicals and Engineering, Chonnam National University) ;
  • Yeo, Jong-Bin (The Research Institute for Catalyst, Chonnam National University) ;
  • Lee, Hyun-Yong (School of Chemical Engineering, Chonnam National University)
  • 장휘종 (전남대학교 신화학소재공학과) ;
  • 공헌 (전남대학교 신화학소재공학과) ;
  • 여종빈 (전남대학교 촉매연구소) ;
  • 이현용 (전남대학교 화학공학부)
  • Received : 2016.11.04
  • Accepted : 2017.02.10
  • Published : 2017.03.01


In this study, $Ge_2Sb_2Te_5$ and $Ge_8Sb_2Te_{11}$ were used as an insulator layer to fabricate ReRAM devices. The resistance change is correlated to the appearance or disappearance of a conductivity filament at the surface of the GeSbTe layer. Changes in the electrical properties of ITO/GeSbTe/Ag devices were measured using a I-V-L measurement system. As a result, compared to the $ITO/Ge_8Sb_2Te_{11}/Ag$ device, this $ITO/Ge_2Sb_2Te_5/Ag$ ReRAM device exhibits highly uniform bipolar resistive switching characteristics, such as the operating voltages, and the resistance values.


Supported by : 전남대학교


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