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Influence of Electron Beam Irradiation on the Electrical Properties of ZnO Thin Film Transistor

전자빔 조사가 ZnO 박막의 전기적 특성 변화에 미치는 영향

  • Choi, Jun Hyuk (Neutron Utilization Technology Division, Korea Atomic Energy Research Institute) ;
  • Cho, In Hwan (Neutron Utilization Technology Division, Korea Atomic Energy Research Institute) ;
  • Kim, Chan-Joong (Neutron Utilization Technology Division, Korea Atomic Energy Research Institute) ;
  • Jun, Byung-Hyuk (Neutron Utilization Technology Division, Korea Atomic Energy Research Institute)
  • 최준혁 (한국원자력연구원 중성자응용기술부) ;
  • 조인환 (한국원자력연구원 중성자응용기술부) ;
  • 김찬중 (한국원자력연구원 중성자응용기술부) ;
  • 전병혁 (한국원자력연구원 중성자응용기술부)
  • Received : 2016.09.08
  • Accepted : 2016.10.15
  • Published : 2017.01.01

Abstract

The effect of low temperature ($250^{\circ}C$) heat treatment after electron irradiation (irradiation time = 30, 180, 300s) on the chemical bonding and electrical properties of ZnO thin films prepared using a sol-gel process were examined. XPS (X-ray photoelectron spectroscopy) analysis showed that the electron beam irradiation decreased the concentration of M-O bonding and increased the OH bonding. As a result of the electron beam irradiation, the carrier concentration of ZnO films increased. The on/off ratio was maintained at ${\sim}10^5$ and the $V_{TH}$ values shifted negatively from 11 to 1 V. As the irradiation time increased from 0 to 300s, the calculated S. S. (subthreshold swing) of ZnO TFTs increased from 1.03 to 3.69 V/decade. These values are superior when compared the sample heat-treated at $400^{\circ}C$ representing on/off ratio of ${\sim}10^2$ and S. S. value of 10.40 V/decade.

Acknowledgement

Supported by : 한국연구재단

References

  1. T. Atsushi, K. Masashi, O. Akira, O. Takeyoshi, O. Keita, O. Hideo, F. C. Shigefusa, and K. Masashi, Jpn. J. Appl. Phys., 44, L643 (2005). [DOI: https://doi.org/10.1143/JJAP.44.L643] https://doi.org/10.1143/JJAP.44.L643
  2. S. Chu, M. Olmedo, Z. Yang, J. Kong, and J. Liu, Appl. Phys. Lett., 93, 181106 (2008). [DOI: https://doi.org/10.1063/1.3012579] https://doi.org/10.1063/1.3012579
  3. S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lu, and H. Shen, J. Cryst. Growth, 225, 110 (2001). [DOI: https://doi.org/10.1016/S0022-0248(01)00830-2] https://doi.org/10.1016/S0022-0248(01)00830-2
  4. A. Janotti and C.G.V. Walle, Phys. Rev. B, 76, 165202 (2007). [DOI: https://doi.org/10.1103/PhysRevB.76.165202] https://doi.org/10.1103/PhysRevB.76.165202
  5. Y. T. Parabhu, K. V. Rao, V.S.S. Kumar, and B. S. Kumari, Sci. Res., 2, 45 (2013).
  6. J.C.C. Fan and J. B. Goodenough, J. Appl. Phys., 48, 3524 (1997). [DOI: https://doi.org/10.1063/1.324149]
  7. T. Ishida, H. Kobayashi, and Y. Nakato, J. Appl. Phys., 73, 4344 (1993). [DOI: https://doi.org/10.1063/1.352818] https://doi.org/10.1063/1.352818
  8. B. D. Ahn, J. H. Lim, M. H. Cho, J. S. Park, and K. B. Chung, J. Phys. D: Appl. Phys., 45, 415307 (2012). [DOI: https://doi.org/10.1088/0022-3727/45/41/415307] https://doi.org/10.1088/0022-3727/45/41/415307
  9. S. Jeong, Y. Jeong, and J. Moon, J. Phys. Chem. C, 112, 11082 (2008). [DOI: https://doi.org/10.1021/jp803475g] https://doi.org/10.1021/jp803475g
  10. S. Jeong, Y. Ha, J. Moon, A. Facchetti, and T. J. Marks, Adv. Mater., 22, 1346 (2010). [DOI: https://doi.org/10.1002/adma.200902450] https://doi.org/10.1002/adma.200902450
  11. T. H. Jeong, S. J. Kim, D. H. Yoon, W. H. Jeong, D. L. Kim, H. S. Lim, and H. J. Kim, Jpn. J. Appl. Phys., 50, 070202 (2011). [DOI: https://doi.org/10.7567/JJAP.50.70202] https://doi.org/10.7567/JJAP.50.070202
  12. D. H. Yoon, S. J. Kim, W. H. Jeong, D. L. Kim, Y. S. Rim, and H. J. Kim, J. Cryst. Growth, 326, 171 (2011). [DOI: https://doi.org/10.1016/j.jcrysgro.2011.01.090] https://doi.org/10.1016/j.jcrysgro.2011.01.090
  13. S. K. Jeong, M. H. Kim, S. Y. Lee, H. Seo, and D. K. Choi, Nano Res. Lett., 9, 619 (2014). [DOI: https://doi.org/10.1186/1556-276X-9-619] https://doi.org/10.1186/1556-276X-9-619
  14. S. J. Kim, A. R. Song, S. S. Lee, S. Nahm, Y. Choi, S. Jeong, and K. B. Chung, J. Mater. Chem. C, 3, 1457 (2014). [DOI: https://doi.org/10.1039/C4TC02408G]
  15. B. D. Ahn, K. B. Chung, and J. S. Park, J. Elctroceram., 34, 229 (2015). https://doi.org/10.1007/s10832-014-9978-1