Influence of Electron Beam Irradiation on the Electrical Properties of ZnO Thin Film Transistor

전자빔 조사가 ZnO 박막의 전기적 특성 변화에 미치는 영향

  • Choi, Jun Hyuk (Neutron Utilization Technology Division, Korea Atomic Energy Research Institute) ;
  • Cho, In Hwan (Neutron Utilization Technology Division, Korea Atomic Energy Research Institute) ;
  • Kim, Chan-Joong (Neutron Utilization Technology Division, Korea Atomic Energy Research Institute) ;
  • Jun, Byung-Hyuk (Neutron Utilization Technology Division, Korea Atomic Energy Research Institute)
  • 최준혁 (한국원자력연구원 중성자응용기술부) ;
  • 조인환 (한국원자력연구원 중성자응용기술부) ;
  • 김찬중 (한국원자력연구원 중성자응용기술부) ;
  • 전병혁 (한국원자력연구원 중성자응용기술부)
  • Received : 2016.09.08
  • Accepted : 2016.10.15
  • Published : 2017.01.01


The effect of low temperature ($250^{\circ}C$) heat treatment after electron irradiation (irradiation time = 30, 180, 300s) on the chemical bonding and electrical properties of ZnO thin films prepared using a sol-gel process were examined. XPS (X-ray photoelectron spectroscopy) analysis showed that the electron beam irradiation decreased the concentration of M-O bonding and increased the OH bonding. As a result of the electron beam irradiation, the carrier concentration of ZnO films increased. The on/off ratio was maintained at ${\sim}10^5$ and the $V_{TH}$ values shifted negatively from 11 to 1 V. As the irradiation time increased from 0 to 300s, the calculated S. S. (subthreshold swing) of ZnO TFTs increased from 1.03 to 3.69 V/decade. These values are superior when compared the sample heat-treated at $400^{\circ}C$ representing on/off ratio of ${\sim}10^2$ and S. S. value of 10.40 V/decade.


Supported by : 한국연구재단


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