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Electrical Properties of Manganite Thin Films Prepared by Spin Spray Method

스핀 스프레이 법으로 제조한 망가나이트 박막의 전기적 특성

  • Jeon, Chang Jun (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Jeong, Young Hun (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Yun, Ji Sun (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Park, Woon Ik (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Paik, Jong Hoo (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Hong, Youn Woo (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Cho, Jeong Ho (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering & Technology)
  • 전창준 (한국세라믹기술원 전자소재부품센터) ;
  • 정영훈 (한국세라믹기술원 전자소재부품센터) ;
  • 윤지선 (한국세라믹기술원 전자소재부품센터) ;
  • 박운익 (한국세라믹기술원 전자소재부품센터) ;
  • 백종후 (한국세라믹기술원 전자소재부품센터) ;
  • 홍연우 (한국세라믹기술원 전자소재부품센터) ;
  • 조정호 (한국세라믹기술원 전자소재부품센터)
  • Received : 2016.10.07
  • Accepted : 2016.11.14
  • Published : 2017.01.01

Abstract

Effects of pH value and deposition time on the electrical properties of (NMC) Ni-Mn-Cu-O and (NMCC) Ni-Mn-Cu-Co-O thin films were investigated. The NMC and NMCC films were prepared by spin spray method. The crystal structure and thickness of the annealed films were changed by the pH value and deposition time, respectively. A single phase of cubic spinel structure was confirmed for the annealed films deposited from solutions with pH 7.6. The resistivity of the annealed films was affected by the crystal structure and microstructure. The TCR (temperature coefficient of resistance) was dependent on the $Mn^{3+}/Mn^{4+}$. Typically, the resistivity of $70.5{\Omega}{\cdot}cm$ and TCR of -3.56%/K at room temperature were obtained for NMCC films deposited from solutions with pH 7.6 for 5 min, and annealed at $450^{\circ}C$ for 3 h.

Acknowledgement

Grant : 액상공정을 이용한 열변화형 세라믹 박막 및 저온 진공 게터 기술 개발

Supported by : 산업통상자원부

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