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Investigation on the Growth of Tungsten Carbide Layer as a Buffer for GaN-on-Si Technology

GaN-on-Si 기술을 위한 탄화텅스텐 버퍼층의 성장에 관한 연구

  • Cho, Sungmin (Department of Convergence Study on the Ocean Science and Technology, Ocean Science and Technology School, Korea Maritime and Ocean University) ;
  • Choi, Junghoon (Major of Electronic Material Engineering, Korea Maritime and Ocean University) ;
  • Choi, Sungkuk (Major of Electronic Material Engineering, Korea Maritime and Ocean University) ;
  • Cho, Youngji (Major of Electronic Material Engineering, Korea Maritime and Ocean University) ;
  • Lee, Seokhawn (Department of Convergence Study on the Ocean Science and Technology, Ocean Science and Technology School, Korea Maritime and Ocean University) ;
  • Chang, Jiho (Department of Convergence Study on the Ocean Science and Technology, Ocean Science and Technology School, Korea Maritime and Ocean University)
  • 조성민 (한국해양대학교 해양과학기술융합학과) ;
  • 최정훈 (한국해양대학교 전자소재공학전공) ;
  • 최성국 (한국해양대학교 전자소재공학전공) ;
  • 조영지 (한국해양대학교 전자소재공학전공) ;
  • 이석환 (한국해양대학교 해양과학기술융합학과) ;
  • 장지호 (한국해양대학교 해양과학기술융합학과)
  • Received : 2016.03.28
  • Accepted : 2016.10.26
  • Published : 2017.01.01

Abstract

Tungsten carbide (WC) has been suggested as a new buffer layer for the GaN-on-Si technology. We have investigated and optimized the sputtering condition of WC layer on the Si-substrate. We confirmed the suppression of the Si melt-back phenomenon. In addition, surface energy of WC/Si layer was measured to confirm the possibility as a buffer layer for GaN growth. We found that the surface energy(${\gamma}=82.46mJ/cm^2$) of WC layer is very similar to that of sapphire substrate(${\gamma}=82.71mJ/cm^2$). We grow GaN layer on the WC buffer by using gas-source MBE, and confirm that it is available to grow a single crystalline GaN layer.

Acknowledgement

Supported by : 한국과학재단

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