Turn-on Loss Reduction for High Voltage Power Stack Using Active Gate Driving Method

  • Kim, Jin-Hong (Intelligent Mechatronics Research Center, Korea Electronics Technology Institute) ;
  • Park, Joon Sung (Intelligent Mechatronics Research Center, Korea Electronics Technology Institute) ;
  • Gu, Bon-Gwan (Dept. of Energy Engineering, Kyungpook National University) ;
  • Won, Chung-Yuen (Dept. of Electrical and Computer Engineering, Sungkyunkwan University)
  • Received : 2016.01.29
  • Accepted : 2016.06.01
  • Published : 2017.03.01


This paper presents an improved approach towards reducing the switching loss of insulated gate bipolar transistors (IGBTs) for a medium-capacity-class power conditioning system (PCS). In order to improve the switching performance, the switching operation is analyzed, and based on this analysis, an improved switching method that reduces the switching time and switching loss is proposed. Compared to a conventional gate drive scheme, the switching loss, switching time, and delay are improved in the proposed gate driving method. The performance of the proposed gate driving method is verified through several experiments.


Active gate drive;Insulated Gate Bipolar Transistor (IGBT) gate driver;IGBT;Medium-voltage drive


Supported by : Korea Institute of Energy Technology Evaluation and Planning(KETEP)


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