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Study on Electrical Properties and Structures of ZTO Thin Films Depending on the Annealing Temperature

ZTO 박막의 열처리온도에 따른 결정성과 전기적인 특성 연구

  • Jo, Yun Jung (Dept. of Semiconductor, Cheongju University) ;
  • Chae, Hong Ju (Dept. of Semiconductor, Cheongju University) ;
  • Oh, Teresa (Dept. of Semiconductor, Cheongju University)
  • Received : 2016.06.26
  • Accepted : 2016.07.08
  • Published : 2016.07.31

Abstract

ZTO films were annealed in a vaccum atmosphere conditions to research the temperature dependency of current-voltage characteristics. The ZTO film annealed in a vacuum became an amorphous structure but films annealed in an atmosphere condition had a crystal structure. The defects or depletion layer were formed by the electron-hole combination after annealing processes, and the electrical properties were changed depending on the crystal structure, binding energy and the variation of carriers. ZTO became more crystal-structural with increasing the annealing temperature, and the current increased at ZTO film annealed at $150^{\circ}C$ with Schottky contact.

ZTO의 결정성의 변화에 따른 전기적인 특성을 조사하기 위해서 진공 중에서 열처리를 하여, 전류전압 특성을 조사하였다. ZTO 박막은 진공 중에서 열처리를 하면 계면에서 접합효과에 의해 많은 결함들이 생기고 이온화에 의해 공핍층이 생성된다. 결함과 공핍층의 형성은 열처리 온도에 따라서 달라지며, 결정성, 결합에너지는 물론 결과적으로 전하량의 변화에 의해 전기적인 특성이 변화하는 것을 알 수 있었다. ZTO 박막은 열처리하면서 결정성이 높아졌으며, 150도 열처리한 ZTO 박막에서 전기적으로 많은 전류가 형성되는 것을 확인하였다.

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