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Study on Electrical Properties and Structures of ZTO Thin Films Depending on the Annealing Temperature

ZTO 박막의 열처리온도에 따른 결정성과 전기적인 특성 연구

  • Jo, Yun Jung (Dept. of Semiconductor, Cheongju University) ;
  • Chae, Hong Ju (Dept. of Semiconductor, Cheongju University) ;
  • Oh, Teresa (Dept. of Semiconductor, Cheongju University)
  • Received : 2016.06.26
  • Accepted : 2016.07.08
  • Published : 2016.07.31

Abstract

ZTO films were annealed in a vaccum atmosphere conditions to research the temperature dependency of current-voltage characteristics. The ZTO film annealed in a vacuum became an amorphous structure but films annealed in an atmosphere condition had a crystal structure. The defects or depletion layer were formed by the electron-hole combination after annealing processes, and the electrical properties were changed depending on the crystal structure, binding energy and the variation of carriers. ZTO became more crystal-structural with increasing the annealing temperature, and the current increased at ZTO film annealed at $150^{\circ}C$ with Schottky contact.

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