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Study on Electrical Properties and Structures of SnO2 Thin Films Depending on the Annealing Temperature

SnO2 박막의 열처리온도에 따른 결정성과 전기적인 특성 연구

  • Yeon, Su Ji (Dept. of Semiconductor, Cheongju University) ;
  • Lee, Sung Hee (Dept. of Semiconductor, Cheongju University) ;
  • Oh, Teresa (Dept. of Semiconductor, Cheongju University)
  • Received : 2016.06.26
  • Accepted : 2016.07.08
  • Published : 2016.07.31

Abstract

$SnO_2$ films were annealed in a vacuum atmosphere conditions to research the temperature dependency of current-voltage characteristics, crystal structure and chemical properties. The $SnO_2$ film annealed in a vacuum became an amorphous structure, but the degree of amorphous structure changed in accordance with the content of oxygen vacancy, which increased at film annealed at $100^{\circ}C$ and then decreased over the sample at annealed at $150^{\circ}C$. Because the crystallinity was affected the content of oxygen vacancy. The oxygen vacancy as carriers disappeared with increasing the annealing temperatures, and the depletion layer increased. Therefore the content of exiton as optical properties increased with becoming the amorphous structure. So the intensity of PL spectra increased with increasing the annealing temperature.

Keywords

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