Study on Electrical Properties and Structures of SnO2 Thin Films Depending on the Annealing Temperature

SnO2 박막의 열처리온도에 따른 결정성과 전기적인 특성 연구

  • Yeon, Su Ji (Dept. of Semiconductor, Cheongju University) ;
  • Lee, Sung Hee (Dept. of Semiconductor, Cheongju University) ;
  • Oh, Teresa (Dept. of Semiconductor, Cheongju University)
  • Received : 2016.06.26
  • Accepted : 2016.07.08
  • Published : 2016.07.31


$SnO_2$ films were annealed in a vacuum atmosphere conditions to research the temperature dependency of current-voltage characteristics, crystal structure and chemical properties. The $SnO_2$ film annealed in a vacuum became an amorphous structure, but the degree of amorphous structure changed in accordance with the content of oxygen vacancy, which increased at film annealed at $100^{\circ}C$ and then decreased over the sample at annealed at $150^{\circ}C$. Because the crystallinity was affected the content of oxygen vacancy. The oxygen vacancy as carriers disappeared with increasing the annealing temperatures, and the depletion layer increased. Therefore the content of exiton as optical properties increased with becoming the amorphous structure. So the intensity of PL spectra increased with increasing the annealing temperature.

$SnO_2$ 박막의 결정성과 화학적인 결합구조의 변화가 전기적인 특성에 미치는 영향을 조사하였다. 증착한 $SnO_2$은 결정질 특성을 가지며 열처리온도가 증가함에 따라 비정질 특성으로 변하였으며, 산소공공의 함량변화는 열처리 온도가 증가할수록 증가하였다가 감소하였다. 산소공공이 증가하면 결정성이 증가하다가 산소공공이 감소하기 시작하면 비정질특성이 우세하게 나타났다. 이러한 결정성에서 비정질로 변화하는 특성의 차이는 PL 분석에 의한 광학적 특성에서 뚜렷하게 나타났으며, 100도와 150도 열처리를 한 박막에서 가장 큰 차이가 나는 것을 보여주었다. XRD 분석보다는 $SnO_2$ 결정구조의 변화에 대하여 광학적인 특성변화에서 더 뚜렷하게 나타난 이유는 케리어의 이온화에 의한 광학적 여기량이 150도 열처리에서 크게 증가하였기 때문이며, 더 높은 온도에서는 광학적 여기량이 감소한 이유는 산소공공에 의한 케리어가 많지 않았기 때문으로 확인할 수 있다.



  1. Sung Hoon Oh, Sae Won Kang, Gun Hwan Lee, Woo Seok Jung, Pung Keun Song, "Effect of Annealing on the Electrical Property and Water Permeability of ZTO/GZO Double-layered TCO Films deposited by DC, RF Magnetron Co-sputtering", The Korean Institute of Surface Engineering, Vol. 45, pp. 34-45, 2012.
  2. Young Deuk Ann, Jae Ho Yeon and Teresa Oh, "Comparison between the Electrical Properties and Structures after Atmosphere Annealing and Vaccum Annealing of IGZO Thin Films," Industry Promotion Research, Vol. 1, pp. 1-6, 2016.
  3. D. H. Hwang, H. H. Ahn, K. N. Hui, K. S. Hui, and Y. G. Son, "Effect of Oxygen Partial Pressure Contents on the Properties of Al-doped ZnO Thin Films Prepared by Radio Frequency Sputtering," J. Ceram. Proc. Res., Vol. 12, pp. 150-154, 2011.
  4. I. P. M. Bouchoms, W. A. Schoonveld, J. Vrijmoeth and T. M. Klapwijk, "Morphology Identification of the Thin Film Phases of Vacuum Evaporated Pentacene on SiO2 Substrates," Synthetic Metals, Vol. 104, pp. 175-178, 1999.
  5. Y-H Kim, S-K Lee and H-J Kim, "Low-k Si-O-C-H Compoiste Films Prepared by Plasma-enhanced Chemical Vapor Deposition Using Bis-trimethylsilymethane Precursor," J. Vac. Sci. Technol. A Vol. 18, No. 4) pp. 1216-1219, 2000.
  6. M. S. Jeon, S. Yoshiba and Koichi Kamisako, "Intrinsic Amorphous Silicon (a-Si:H) Thin Film Prepared by Using Remote Plasma Chemical Vapor Depositeion Method and Used as a Passivation Layer for a Heterojunction Solar Cell," J. Korean Phys. Soc. Vol. 54, pp. 194-199, 2009.
  7. M. J. Kellicutt, I. S. Suzuki, C. R. Burr, M. Suzuki, M. Ohashi and M. S. Whittingham, "Variable Range Hopping Conduction and the Poole-Frenkel Effect in a Polyaniline Vermiculite Intercalation Compound", Phys. Rev. B. Vol. 47, No. 20, pp. 13664-13673, 1993.
  8. Chu, M.C., Meena, J.S., Liu, P.T., Shieh, H.D., You, H.C., Tu, Y.W., Chang, F.C., and Ko, F.H., "Oxygen Plasma Functioning of Charge Carrier Density in Zinc Oxide Thin-Film Transistors," Applied Physics Express, Vol. 6, 076501, 2013.
  9. Young Ho So, Jung Ho Song, Dong Myung Seo and Teresa Oh, "A Study on the Chemical Properties of AZO with Crystral Structure and IGZO of Aorphous Structure due to the Annealing Temperature," Industry Promotion Research, Vol. 1, pp. 1-6, 2016.
  10. B. K. Lee and K. M. Lee, "Structural and Electrical Characteristics of IZO Thin Flms Deposited on Fexible Sbstrate", The Journal of the Korean Institute of Electrical and Electronic Material Engineers, Vol. 10, pp. 39-44, 2011.
  11. Teresa Oh, "Correlation Between Energy Gap and Defect Formation of Al Doped Zinc Oxide on Carbon Doped Silicon Oxide", TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, Vol. 15, No. 4, August 25, pp. 207-212, 2014,
  12. Teresa Oh, "Correlation between Oxygen Related Bonds and Defects Formation in ZnO Thin Films by Using X-ray Diffraction and X-ray Photoelectron Spectroscopy", MRSK, 24, pp. 134-138, 2014.
  13. Teresa Oh, "Investigation on electrical properties of low-dielectric constant fluorinated amorphous carbon film", Jpn. J. Appl. Phys. Vol. 45, pp. 7871-7875, 2006.
  14. P. de Rouffignac, Z. Li, and R. G. Gordon, "Sealing Porous Low-k Dielectrics with Silica", Electrochemical and Solid State Letters, Vol. 7, pp. G360-G308, 2004.
  15. T. Oh, "Organic Thin Film Transistors Using Pentacene and SiOC film", IEEE Transactions on Nanotechnology, Vol. 5, pp. 23-29, 2006.
  16. Ioannis Kymissis, C. D. Dimitrakopoulos and Sampath Purushothaman, "High-Performance Bottom Electrode Organic Thin-Film Transistors", IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 48, pp. 1060-1064, 2001.
  17. Akiko Nara and Hitoshi Itoh, "Low Dielectric Constant Insulator Formed by Downstream Plasma CVD at Room Temperature Using TMS/O2", Jpn. J. Appl. Phys. 36, pp.1477-1480, 1997.
  18. X. Peng, G. Horowitz, D. Fichou and F. Garnier, "All-Organic Thin-Film Transistors made of Alpha-Sexithienyl Semiconducting and Various Polymeric Insulating Layers," Applied Physics Letters, Vol. 57, No. 19, pp. 2013-2015, 1990.
  19. M. A. Tamor, C. H. Wu, "Graphitic Network Models of Diamondlike Carbon", J.Appl. Phys, Vol. 67, No. 2, pp. 1007-1012, 1990.
  20. Jung Hyung Kim, Sang Hun Seo, Seok Min Yun, Hong Young Chang, Kwang Man Lee and Chi Kyu Choi, "The Deposition of SiOF Film whth Low Dielectric Constant in a Helicon Plasma Source", Appl. Phys. Lett, Vol. 68, No. 11, pp. 1507-1510, 1996.
  21. Teresa Oh, "Depletion Effect of Oxide Semiconductor Analyzed by Hall Effects", Journal of Nanoscience and Nanotechnology, Vol. 14, pp. 9047-9050, 2014.
  22. S. Vallon, A. Hofrichter, B. Drevillon, J. E. Klemberg-Sapieha, L. Martinu, F. Poncin-Eaillard, "Improvement of the Adhesion of Silica Layers to Polypropylene Induced by Nitrogen Plasma Treatment", Thin Solid Tilms, Vol. 290-291, pp. 68-73, 1996.
  23. C. Li, G. Fang, Y. Ren, Q. Fu and X. Zhao, "Silver Nanoisland Induced Synthesis of ZnO Nanostructures by Vapor Phase Transport," J. Nanoscience and Nanotechnology, Vol. 6, pp. 1467-1473, 2006.
  24. Teresa Oh, "Analysis of Electrical Characteristics of Oxide Semiconductor of ZnO, SnO2 and ZTO", Korean Journal of Materials Research, Vol. 25, pp. 347-349, 2016.
  25. Meng Yu and Jungyol Jo, "Sputtering Growth of ZnO Thin-Film Transistor Using Zn Target", The Journal of the Korean Institute of Electrical and Electronic Material Engineers, September Vol. 13, pp. 35-38, 2014.
  26. H. M. Kim and J. J. kim, "Heat Treatment Effects on the Electrical Properties of In2O3-ZnO Films Prepared by RF-Magnetron Sputtering Method," J. Korean Vacuum Society, Vol. 14, pp. 238-244, 2005.