A Study on Malfunction Mode of CMOS IC Under Narrow-Band High-Power Electromagnetic Wave

협대역 고출력 전자기파로 인한 CMOS IC에서의 오동작 특성 연구

  • Park, Jin-Wook (Department of Electrical Engineering, Inha University) ;
  • Huh, Chang-Su (Department of Electrical Engineering, Inha University) ;
  • Seo, Chang-Su (Department of Electrical Engineering, Inha University) ;
  • Lee, Sung-Woo (Department of Electrical Engineering, Inha University)
  • Received : 2016.06.29
  • Accepted : 2016.08.11
  • Published : 2016.09.01


This study examined the malfunction mode of the HCMOS IC under narrow-band high-power electromagnetic wave. Magnetron is used to a narrow-band electromagnetic source. MFR (malfunction failure rate) was measured to investigate the HCMOS IC. In addition, we measured the resistance between specific pins of ICs, which are exposed and not exposed to the electromagnetic wave, respectively. As a test result of measurement, malfunction mode is shown in three steps. Flicker mode causing a flicker in LED connected to output pin of IC is dominant in more than 7.96 kV/m electric field. Self-reset mode causing a voltage drop to the input and output of IC during electromagnetic wave radiation is dominant in more than 9.1 kV/m electric field. Power-reset mode making a IC remained malfunction after electromagnetic radiation is dominant in more than 20.89 kV/m. As a measurement result of pin-to-pin resistance of IC, the differences between IC exposed to electromagnetic wave and normal IC were minor. However, the five in two hundred IC show a relatively low resistance. This is considered to be the result of the breakdown of pn junction when latch-up in CMOS occurred. Based on the results, the susceptibility of HCMOS IC can be applied to a basic database to IC protection and impact analysis of narrow-band high-power electromagnetic waves.


Supported by : 한국에너지기술평가원(KETEP)


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