Aging Effects on Electrical Characteristics of Sol-gel Processed CuO Thin Film Transistors

Aging 효과가 Sol-gel 공정 기반 CuO 박막 트랜지스터의 전기적 특성에 미치는 영향

  • Jang, Jaewon (School of Electronics Engineering, Kyungpook National University)
  • 장재원 (경북대학교 IT대학 전자공학부)
  • Received : 2016.04.12
  • Accepted : 2016.06.29
  • Published : 2016.09.01


In this study, p-type thin film transistors consisting of CuO channels were fabricated by sol-gel process, with copper (II) acetate monohydrate precursors. At $500^{\circ}C$, the deposited films were fully converted into monoclinic phase CuO. The fabricated CuO thin film transistors deliver field effect mobility in saturation regime of $0.015cm^2/Vs$, and $I_{on}/I_{off}$ of ${\sim}10^3$. The degradation of the performance of the fabricated CuO thin film transistor caused by the exposure to air has been studied.


Grant : BK21플러스

Supported by : 경북대학교


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