A Study on the Metal Mesh for CuNx-Cu-CuNx Multi-layer Touch Electrode by Reactive Magnetron Sputtering

Reactive Magnetron Sputtering 적용 CuNx-Cu-CuNx 적층형 Metal Mesh 터치센서 전극 특성 연구

  • 김현석 (한국산업기술대학교 신소재공학과) ;
  • 양성주 (한국산업기술대학교 신소재공학과) ;
  • 노경재 (한국산업기술대학교 신소재공학과) ;
  • 이성의 (한국산업기술대학교 신소재공학과)
  • Received : 2016.04.07
  • Accepted : 2016.06.20
  • Published : 2016.07.01


In the present study, the $CuN_x-Cu-CuN_x$ layer the partial pressure ratio Cu metal of Ar and $N_2$ gas using a DC magnetron sputtering device, was generated by the In-situ method. $CuN_x$ layer was able to obtain a surface reflectance reduction effect from the advantages of the process and the external light. $CuN_x$ layer is gas partial pressure, DC the Power, the deposition time variable transmittance in response to the thickness and partial pressure ratio, the reflectance was measured. $Ar:N_2$ gas ratio 10:10(sccm), DC power 0.35 A, was derived Deposition time 90 sec optimum conditions. Thus, according to the optimal thickness and the composition ratio was derived surface reflectance of 20.75%. In addition, to derive the value of ${\Delta}$ Ra surface roughness of 0.467. It was derived $CuN_x$ band-gap energy of about 2.2 eV. Thus, to ensure a thickness and process conditions can be absorbed to maximize the light in a wavelength band in the visible light region. As a result, the implementation of the $12k{\Omega}$ base line resistance of using the Cu metal. This is, 5 inch Metal mesh TSP(L/S: $4/270{\mu}m$) is in the range of the reference operation.


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