Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Enhancing Solar Cell Properties of Heterojunction Solar Cell in Amorphous Silicon Carbide

수광층의 카바이드 함량 변화에 따른 실리콘 이종접합 태양전지 특성 변화

  • Kim, Hyunsung (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Kim, Sangho (Department of Energy Science, Sungkyunkwan University) ;
  • Lee, Youngseok (Department of Energy Science, Sungkyunkwan University) ;
  • Jeong, Jun-Hui (Department of Energy Science, Sungkyunkwan University) ;
  • Kim, Yongjun (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Dao, Vinh Ai (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Yi, Junsin (School of Information and Communication Engineering, Sungkyunkwan University)
  • 김현성 (성균관대학교 전기전자컴퓨터공학과) ;
  • 김상호 (성균관대학교 에너지과학과) ;
  • 이영석 (성균관대학교 에너지과학과) ;
  • 정준희 (성균관대학교 에너지과학과) ;
  • 김용준 (성균관대학교 전기전자컴퓨터공학과) ;
  • 다오빈 아이 (성균관대학교 전기전자컴퓨터공학과) ;
  • 이준신 (성균관대학교 전기전자컴퓨터공학과)
  • Received : 2016.04.11
  • Accepted : 2016.05.24
  • Published : 2016.06.01

Abstract

In this paper, the efficiency improvement of the heterojunction with intrinsic thin layer (HIT) solar cells is obtained by optimization process of p-type a-SiC:H as emitter. The optoelectronic of p-type a-SiC:H layers including the optical band-gap and conductivity under the methane gas content variation is conducted in detail. A significant increase in the Jsc by $1mA/cm^2$ and Voc by 30 mV are attributed to enhanced photon-absorption due to broader band-gap of p-a-SiC:H and reduced band-offsets at p-side interface, respectively of HIT solar cells.

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Acknowledgement

Supported by : 한국에너지기술평가원(KETEP)

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