Removal of Laser Damage in Electrode Formed by Plating in Crystalline Silicon Solar Cells

결정질 실리콘 태양전지에서 도금을 이용한 전극 형성 시 발생되는 레이저 손상 제거

  • Jeong, Myeong Sang (Department Materials Science and Engineering, Korea University) ;
  • Kang, Min Gu (Photovoltaic Laboratory, Korea Institute of Energy Research) ;
  • Lee, Jeong In (Photovoltaic Laboratory, Korea Institute of Energy Research) ;
  • Song, Hee-eun (Photovoltaic Laboratory, Korea Institute of Energy Research)
  • 정명상 (고려대학교 신소재공학과) ;
  • 강민구 (한국에너지기술연구원 태양광연구실) ;
  • 이정인 (한국에너지기술연구원 태양광연구실) ;
  • 송희은 (한국에너지기술연구원 태양광연구실)
  • Received : 2015.12.22
  • Accepted : 2016.05.24
  • Published : 2016.06.01


In this paper, we investigated the electrical properties of crystalline silicon solar cell fabricated with Ni/Cu/Ag plating. The laser process was used to ablate silicon nitride layer as well as to form the selective emitter. Phosphoric acid layer was spin-coated to prevent damage caused by laser and formed selective emitter during laser process. As a result, the contact resistance was decreased by lower sheet resistance in electrode region. Low sheet resistance was obtained by increasing laser current, but efficiency and open circuit voltage were decreased by damage on the wafer surface. KOH treatment was used to remove the laser damage on the silicon surface prior to metalization of the front electrode by Ni/Cu/Ag plating. Ni and Cu were plated for each 4 minutes and 16 minutes and very thin layer of Ag with $1{\mu}m$ thickness was plated onto Ni/Cu electrode for 30 seconds to prevent oxidation of the electrode. The silicon solar cells with KOH treatment showed the 0.2% improved efficiency compared to those without treatment.


Supported by : 한국에너지기술연구원, 한국에너지기술평가원


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